Datasheet TIP49, TIP50, TIP48, TIP47 Datasheet (Power Innovations)

● 40 W at 25°C Case Temperature

● 1 A Continuous Collector Current

● 2 A Peak Collector Current

● 20 mJ Reverse-Energy Rating

TIP47, TIP48, TIP49, TIP50

NPN SILICON POWER TRANSISTORS

DECEMBER 1971 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK

TO-220 PACKAGE

(TOP VIEW)

B
C
E

1
2
3

Pin 2 is in electrical contact with the mounting base.

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING SYMBOL VALUE UNIT

TIP47

Collector-base voltage (I

Collector-emitter voltage (I

E

= 0)

= 0)

B

Emitter-base voltage V
Continuous collector current I
Peak collector current (see Note 1) I
Continuous base current I
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) P
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) P
Unclamped inductive load energy (see Note 4) ½LI
Operating junction temperature range T
Storage temperature range T
Lead temperature 3.2 mm from case for 10 seconds T

NOTE 1: This value applies for tp ≤ 1 ms, duty cycle ≤ 2%.

2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.

4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
= 0, RS = 0.1 Ω, VCC = 20 V.

V

BE(off)

TIP48
TIP49
TIP50
TIP47
TIP48
TIP49
TIP50

V

V

CBO

CEO

EBO

C

CM

B
tot
tot

stg

L

C

j

2

B(on)

MDTRACA

350
400
450
500
250
300
350
400

5 V
1 A
2 A

0.6 A
40 W

2 W

20 mJ

-65 to +150 °C

-65 to +150 °C
260 °C

= 0.4 A, RBE = 100 Ω,

V

V

PRODUCT INFORMATION

Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.

1

TIP47, TIP48, TIP49, TIP50
NPN SILICON POWER TRANSISTORS

DECEMBER 1971 - REVISED MARCH 1997

electrical characteristics at 25°C case temperature

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

TIP47

V

(BR)CEO

I

CES

I

CEO

I

EBO

h

V

CE(sat)

V

h

|hfe|

Collector-emitter
breakdown voltage

Collector-emitter
cut-off current

Collector cut-off
current

Emitter cut-off
current
Forward current

FE

transfer ratio
Collector-emitter
saturation voltage
Base-emitter

BE

voltage
Small signal forward

fe

current transfer ratio
Small signal forward
current transfer ratio

= 30 mA

I

C

IB = 0

(see Note 5)
V

= 350 V

CE

= 400 V

V

CE

= 450 V

V

CE

= 500 V

V

CE

V

= 150 V

CE

= 200 V

V

CE

= 250 V

V

CE

= 300 V

V

CE

= 5 V IC= 0 1 mA

V

EB

VCE = 10 V

= 10 V

V

CE

= 0.2 A IC= 1 A (see Notes 5 and 6) 1 V

I

B

= 10 V IC= 1 A (see Notes 5 and 6) 1.5 V

V

CE

= 10 V IC= 0.2 A f = 1 kHz 25

V

CE

= 10 V IC= 0.2 A f = 2 MHz 5

V

CE

V

BE

V

BE

V

BE

V

BE

I

B

I

B

I

B

I

B

I

C

I

C

= 0
= 0
= 0

= 0
= 0
= 0
= 0
= 0

= 0.3 A
= 1 A

NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.

6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

TIP48
TIP49
TIP50
TIP47
TIP48
TIP49
TIP50
TIP47
TIP48
TIP49
TIP50

(see Notes 5 and 6)

250
300
350
400

30
10

1
1
1
1
1
1
1
1

150

V

mA

mA

resistive-load-switching characteristics at 25°C case temperature

PARAMETER TEST CONDITIONS

Turn on time IC = 1 A

t

on

Turn off time 2 µs

t

off

†

Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

V

BE(off)

= -5 V

I

B(on)

= 200 Ω

R

L

= 0.1 A

†

I

= -0.1 A

B(off)

(see Figures 1 and 2)

MIN TYP MAX UNIT

0.2 µs

PRODUCT INFORMATION

2

NPN SILICON POWER TRANSISTORS

= 15 V, Source Impedance = 50

DECEMBER 1971 - REVISED MARCH 1997

PARAMETER MEASUREMENT INFORMATION

+25 V

TIP47, TIP48, TIP49, TIP50

V

1

t

p

tp = 20 µs
Duty cycle = 1%
V

1

A - B = t

d

B - C = t

r

E - F = t

f

D - E = t

s

A - C = t

on

D - F = t

off

BD135

T

V

100

1

Ω

ΩΩ

BD136

47

15

120

ΩΩ

ΩΩ

82

ΩΩ

ΩΩ

µµ

680 F

680 F

µµ

100

ΩΩ

100

TUT

V

V

= 250 V

CC

F

µµ

cc

Figure 1. Resistive-Load Switching Test Circuit

90%

90%

C

I

C

10%

B

90%

I

B

A

10%

E

10%

F

D

I

B(on)

dI

dt

B

≥ 2 A/µs

0%

0%

Figure 2. Resistive-Load Switching Waveforms

PRODUCT INFORMATION

I

B(off)

3

TIP47, TIP48, TIP49, TIP50
NPN SILICON POWER TRANSISTORS

DECEMBER 1971 - REVISED MARCH 1997

TYPICAL CHARACTERISTICS

TYPICAL DC CURRENT GAIN

vs

COLLECTOR CURRENT

50

VCE = 10 V
TC = 25°C
tp = 300 µs, duty cycle < 2%

40

30

20

- Typical DC Current Gain

FE

h

10

0

0.01 0.1 1
IC - Collector Current - A

Figure 3. Figure 4.

TCP770AA

COLLECTOR-EMITTER SATURATION VOLTAGE

vs

COLLECTOR CURRENT

0·3

IC / IB = 5
TC = 25°C
tp = 300 µs, duty cycle < 2%

0·2

0·1

- Collector-Emitter Saturation Voltage - V

CE(sat)

V

0

0·01 0·1 1

IC - Collector Current - A

TCP770AB

BASE-EMITTER SATURATION VOLTAGE

vs

COLLECTOR CURRENT

1.0
VCE = 10 V

TC = 25°C

0.9
tp = 300 µs, duty cycle < 2%

0.8

0.7

0.6

0.5

0.4

0.3

- Base-Emitter Saturation Voltage - V

0.2

BE(sat)

V

0.1

0.0

0·01 0·1 1·0

IC - Collector Current - A

Figure 5.

TCP770AC

PRODUCT INFORMATION

4

NPN SILICON POWER TRANSISTORS

MAXIMUM SAFE OPERATING REGIONS

MAXIMUM FORWARD-BIAS

SAFE OPERATING AREA

10

1·0

- Collector Current - A

0.1

C

I

tp = 100 µµs
tp = 500 µµs
tp = 1 ms
DC Operation

0·01

1·0 10 100 1000

VCE - Collector-Emitter Voltage - V

TIP47
TIP48
TIP49
TIP50

SAP770AA

TIP47, TIP48, TIP49, TIP50

DECEMBER 1971 - REVISED MARCH 1997

Figure 6.

PRODUCT INFORMATION

5

TIP47, TIP48, TIP49, TIP50

Version 1, 18.0 mm. Version 2, 17.6 mm.

NPN SILICON POWER TRANSISTORS

DECEMBER 1971 - REVISED MARCH 1997

MECHANICAL DATA

TO-220

3-pin plastic flange-mount package

This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.

TO220

3,96

ø

3,71

see Note B

see Note C

0,97
0,61

10,4
10,0

1 2 3

1,70
1,07

2,74
2,34

5,28
4,88

2,95
2,54

6,1
3,5

4,70
4,20

1,32
1,23

6,6
6,0

15,90
14,55

14,1
12,7

0,64
0,41

2,90
2,40

NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.

PRODUCT INFORMATION

6

VERSION 2 VERSION 1

ALL LINEAR DIMENSIONS IN MILLIMETERS

MDXXBE

TIP47, TIP48, TIP49, TIP50

NPN SILICON POWER TRANSISTORS

DECEMBER 1971 - REVISED MARCH 1997

IMPORTANT NOTICE

Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.

PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.

PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.

PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.

Copyright © 1997, Power Innovations Limited

PRODUCT INFORMATION

7