Datasheet tip47_tip48_tip49_tip50 Datasheet

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TIP47/TIP48/TIP49/TIP50

NPN Silicon Transistor

• High Voltage and Switching Applications

• High Sustaining Voltage : V

• 1A Rated Collector Current

(sus) = 250 - 400V

CEO

TIP47/TIP48/TIP49/TIP50 — NPN Silicon Transistor

November 2008

1.Base 2.Collector 3.Emitter

Absolute Maximum Ratings* T

Symbol Parameter Ratings Units

CBO

CEO

EBO

STG

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Collector-Base Voltage : TIP47

Collector-Emitter Voltage : TIP47

Emitter-Base Voltage 5 V

Collector Current (DC) 1 A

Collector Current (Pulse) 2 A

Base Current 0.6 A

Collector Dissipation (TC=25°C) 40 W

Collector Dissipation (Ta=25°C) 2 W

Junction Temperature 150 °C

Storage Temperature - 65 ~ 150 °C

= 25°C unless otherwise noted

: TIP48 : TIP49 : TIP50

TO-220

350 400 450 500

250 300 350 400

V V V V

TIP47/TIP48/TIP49/TIP50 Rev. 1.0.0 1

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TIP47/TIP48/TIP49/TIP50 — NPN Silicon Transistor

Electrical Characteristics* T

=25°C unless otherwise noted

Symbol Parameter Test Condition Min. Typ. Max. Units

(sus) Collector-Emitter Sustaining Voltage

CEX

ICEO

CEX

IEBO

hFE

Collector Cut-off Current : TIP47

Emitter Cut-off Current V

* DC Current Gain V

: TIP47 : TIP48 : TIP49 : TIP50

: TIP48 : TIP49 : TIP50

IC = 30mA, IB = 0 250

300 350 400

= 150V, IB = 0

= 200V, IB = 0

= 250V, IB = 0

= 300V, IB = 0

= 350V, V

= 400V, V

= 450V, V

= 500V, V

= 5V, IC = 0 1 mA

= 10V, IC = 0.3A

= 10V, IC = 1A

= 0 = 0 = 0 = 0

30 10

1 1 1 1

150

VCE(sat) * Collector-Emitter Saturation Voltage IC = 1A, IB = 0.2A 1 V

VBE(sat) * Base-Emitter Saturation Voltage V

* Pulse Test: Pulse Width£300ms, Duty Cycle£2%

Current Gain Bandwidth Product V

= 10V, IC = 1A 1.5 V

=10V, IC = 0.2A, f =

1MHz

10 MHz

V V V V

mA mA mA mA

TIP47/TIP48/TIP49/TIP50 Rev. 1.0.0 2

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Typical Characteristics

TIP47/TIP48/TIP49/TIP50 — NPN Silicon Transistor

1000

100

, DC CURRENT GAIN

0.01 0.1 1 4

IC[A], COLLECTOR CURRENT

Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage

0.1

[A], COLLECTOR CURRENT

0.01 1 10 100 1000

VCE[V], COLLECTOR-EMITTER VOLTAGE

TIP47 TIP48 TIP49 TIP50

VCE = 10V

VBE(sat)

0.1

(sat)[V], SATURATION VOLTAGE

(sat), V

0.01

0.01 0.1 1 4

VCE(sat)

IC = 5 I

IC[A], COLLECTOR CURRENT

Base-Emitter Saturation Voltage

[W], POWER DISSIPATION

0 25 50 75 100 125 150 175

TC[oC], CASE TEMPERATURE

Figure 3. Safe Operating Area Figure 4. Power Derating

TIP47/TIP48/TIP49/TIP50 Rev. 1.0.0 3

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Mechanical Dimensions

TIP47/TIP48/TIP49/TIP50 — NPN Silicon Transistor

TO220

TIP47/TIP48/TIP49/TIP50 Rev. 1.0.0 4

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TRADEMARKS

The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK

Fairchild

Fairchild Semiconductor FACT Quiet Series™

FACT

FAST FastvCore™ FPS™

FRFET Global Power Resource

Green FPS™ Green FPS™ e-Series™ GTO™ i-Lo™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™

MicroFET™ MicroPak™ MillerDrive™ Motion-SPM™ OPTOLOGIC OPTOPLANAR

PDP-SPM™ Power220

Power247 POWEREDGE Power-SPM™ PowerTrench Programmable Active Droop™ QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ SMART START™ SPM STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6

SuperSOT™-8 SyncFET™ The Power Franchise

TinyBoost™ TinyBuck™ TinyLogic

TINYOPTO™ TinyPower™

TinyPWM™ TinyWire™ µSerDes™

UHC UniFET™ VCX™

TIP47/TIP48/TIP49/TIP50 NPN Silicon TransistorTIP47/TIP48/TIP49/TIP50

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

provided in the labeling, can be reasonably expected to result in significant injury to the user.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In Design

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data; supplementary data will be pub-

Preliminary First Production

lished at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

No Identification Needed Full Production

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

This datasheet contains specifications on a product that has been discontin-

Obsolete Not In Production

ued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. I31

TIP47/TIP48/TIP49/TIP50 Rev. A1 5