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固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors TIP41D/41E/41F
DESCRIPTION ·
·With TO-220C package
·Complement to type TIP42D/42E/42F
APPLICATIONS
·For medium power linear
switching applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Tc=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
TIP41D 160
V
CBO
V
CEO
V
EBO
IC Collector current (DC) 6 A
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage Open collector 5 V
TIP41E 180
TIP41F
TIP41D 120
TIP41E 140
TIP41F
Open emitter
Open base
V
200
V
160
ICM Collector current-Pulse 10 A
IB Base current 3 A
TC=25℃
PC Collector power dissipation
=25℃
T
a
Tj Junction temperature 150
T
Storage temperature -65~150
stg
65
W
2
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors TIP41D/41E/41F
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
TIP41D 120
V
CEO(SUS)
V
CEsat
VBE Base-emitter on voltage IC=6A ; VCE=4V 2.0 V
I
CES
I
CEO
I
EBO
h
FE-1
Collector-emitter
sustaining voltage
Collector-emitter saturation voltage IC=6A; IB=1.5A 1.5 V
Collector
cut-off current
Collector cut-off current
Emitter cut-off current VEB=5V; IC=0 1.0 mA
DC current gain IC=0.3A ; VCE=4V 30
TIP41E 140
TIP41F
TIP41D VCE=120V; VEB=0
TIP41E VCE=140V; VEB=0
TIP41F V
IC=30mA; IB=0
160
0.4 mA
=160V; VEB=0
CE
VCE=90V; IB=0 0.7 mA
V
h
DC current gain IC=3A ; VCE=4V 15
FE-2
fT Transiton frequency IC=0.5A ; VCE=10V 3 MHz
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors TIP41D/41E/41F
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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