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固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors TIP41/41A/41B/41C
DESCRIPTION ·
·With TO-220C package
·Complement to type TIP42/42A/42B/42C
APPLICATIONS
·For medium power linear switching
applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Tc=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
CBO
CEO
Collector-base voltage
Collector-emitter voltage
℃)
TIP41 40
TIP41A 60
TIP41B 80
TIP41C
TIP41 40
TIP41A 60
TIP41B 80
TIP41C
Open emitter
Open base
V
100
V
100
V
Emitter-base voltage Open collector 5 V
EBO
IC Collector current (DC) 6 A
ICM Collector current-Pulse 10 A
IB Base current 2 A
PC Collector power dissipation
Tj Junction temperature 150 ℃
T
Storage temperature -65~150 ℃
stg
TC=25℃ 65
T
=25℃
a
W
2
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors TIP41/41A/41B/41C
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
TIP41 40
V
CEO(SUS)
V
CEsat
VBE Base-emitter on voltage IC=6A ; VCE=4V 2.0 V
I
CES
I
CEO
Collector-emitter
sustaining voltage
Collector-emitter saturation voltage IC=6A; IB=0.6A 1.5 V
Collector
cut-off current
Collector
cut-off current
TIP41A 60
=30mA; IB=0
I
C
TIP41B 80
TIP41C
TIP41 VCE=40V; VEB=0
TIP41A VCE=60V; VEB=0
TIP41B VCE=80V; VEB=0
TIP41C V
TIP41/41A VCE=30V; IB=0
TIP41B/41C VCE=60V; IB=0
=100V; VEB=0
CE
100
0.4 mA
0.7 mA
V
I
Emitter cut-off current VEB=5V; IC=0 1.0 mA
EBO
h
DC current gain IC=0.3A ; VCE=4V 30
FE-1
h
DC current gain IC=3A ; VCE=4V 15 75
FE-2
fT Transiton frequency IC=0.5A ; VCE=10V 3 MHz
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors TIP41/41A/41B/41C
PACKAGE OUTLINE
3
Fig.2 Outline dimensions
Page 4
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors TIP41/41A/41B/41C
4
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