
TIP41 Series(TIP41/41A/41B/41C)
Medium Power Linear Switching Applications
• Complement to TIP42/42A/42B/42C
TIP41 Series(TIP41/41A/41B/41C)
1
TO-220
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
P
C
T
J
T
STG
Collector-Emitter Voltage: TIP41
Collector-Emitter Voltage: TIP41
Emitter-Base Voltage 5 V
Collector Current (DC) 6 A
Collector Current (Pulse) 10 A
Base Current 2 A
Collector Dissipation (TC=25°C) 65 W
Collector Dissipation (Ta=25°C) 2 W
Junction Temperature 150 °C
Storage T emperature - 65 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
V
(sus) * Collector-Emitter Sustaining Voltage
CEO
ICEO
I
CES
IEBO
hFE
VCE(sat) * Collector-Emitter Saturation Voltage IC = 6A, IB = 600mA 1.5 V
(sat) * Base-Emitter Saturation Voltage V
V
BE
f
T
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2000 Fairchild Semiconductor International Rev. A, February 2000
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current V
* DC Current Gain V
Current Gain Bandwidth Product V
TC=25°C unless otherwise noted
: TIP41A
: TIP41B
: TIP41C
: TIP41A
: TIP41B
: TIP41C
TC=25°C unless otherwise noted
: TIP41
: TIP41A
: TIP41B
: TIP41C
: TIP41/41A
: TIP41B/41C
: TIP41
: TIP41A
: TIP41B
: TIP41C
40
60
80
100
40
60
80
100
I
= 30mA, IB = 0
C
40
60
80
100
= 30V, I
V
CE
= 60V, IB = 0
V
CE
= 40V, V
V
CE
= 60V, V
V
CE
V
= 80V, V
CE
= 100V, V
V
CE
= 5V, IC = 0 1 mA
EB
= 4V,IC = 0.3A
CE
= 4V, IC = 3A
V
CE
= 4V, IC = 6A
CE
= 10V, IC = 500mA 3.0 MHz
CE
B =
EB
EB
EB
EB
0
= 0
= 0
= 0
= 0
0.7
0.7mAmA
400
400
400
400
30
15
V
V
V
V
V
V
V
V
75
2.0 V
V
V
V
V
µA
µA
µA
µA

Typical Characteristics
TIP41 Series(TIP41/41A/41B/41C)
1000
100
10
, DC CURRENT GAIN
FE
h
1
1 10 100 1000 10000
VCE = 4V
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
100
IC(MAX) (PULSE)
10
IC(MAX) (DC)
1
[A], COLLECTOR CURRENT
C
I
0.1
110100
TIP41 V
TIP41A V
TIP41B V
TIP41C V
VCE[V], COLLECTOR-EMITTER VOLTAGE
0.5ms
1ms
5ms
MAX.
CEO
MAX.
CEO
MAX.
CEO
MAX.
CEO
10000
IC/IB = 10
1000
100
(sat)[mV], SATURATION VOLTAGE
CE
(sat), V
BE
10
V
VBE(sat)
VCE(sat)
1 10 100 1000 10000
IC[mA], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
100
80
60
40
20
[W], POWER DISSIPATION
C
P
0
0 255075100125150175
TC[oC], CASE TEMPERATURE
Figure 3. Safe Operating Area Figure 4. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000

Package Demensions
±0.10
(1.70)
1.30
±0.20
9.20
(1.46)
9.90
(8.70)
ø3.60
TO-220
±0.20
±0.10
(45°)
(3.70)(3.00)
±0.10
2.80
±0.20
15.90
18.95MAX.
4.50
1.30
±0.20
+0.10
–0.05
TIP41 Series(TIP41/41A/41B/41C)
±0.20
13.08
(1.00)
1.27
2.54TYP
[2.54
±0.10
±0.20
]
10.00
±0.20
1.52
±0.10
0.80
2.54TYP
[2.54
±0.10
±0.20
±0.30
10.08
+0.10
0.50
–0.05
2.40
±0.20
]
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. A, February 2000

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E
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®
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®
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Quiet Series™
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2000 Fairchild Semiconductor International Rev. E
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
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any time without notice in order to improve design.
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The datasheet is printed for reference information only.