Datasheet tip36_36a_36b_36c Datasheet

Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors TIP36/36A/36B/36C
DESCRIPTION
·Complement to type TIP35/35A/35B/35C
·DC current gain h
APPLICATIONS
·Designed for use in general purpose power amplifier and switching applications.
PINNING
PIN DESCRIPTION
=25(Min)@IC=-1.5A
FE
1 2 3 Emitter
Base Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
TIP36 -40
V
CBO
V
CEO
V
EBO
IC Collector current -25 A
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage Open collector -5 V
TIP36A -60 TIP36B -80 TIP36C TIP36 -40 TIP36A -60 TIP36B -80 TIP36C
Open emitter
Open base
V
-100
V
-100
ICM Collector current-peak -40 A
IB Base current -5 A
PC Collector power dissipation TC=25℃ 125 W
Tj Junction temperature 150 ℃
T
Storage temperature -65~150 ℃
stg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
Thermal resistance junction to case 1.0
th j-c
℃/W
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors TIP36/36A/36B/36C
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
TIP36 -40
V
CEO(SUS)
V
CEsat-1
V
CEsat-2
V
BE-1
V
BE-2
I
CEO
I
CES
Collector-emitter sustaining voltage
Collector-emitter saturation voltage IC=-15A ;IB=-1.5A -1.8 V
Collector-emitter saturation voltage IC=-25A; IB=-5A -4.0 V
Base-emitter on voltage IC=-15A ; VCE=-4V -2.0 V
Base-emitter on voltage IC=-25A ; VCE=-4V -4.0 V
Collector cut-off current
Collector cut-off current
TIP36A -60
=-30mA ;IB=0
I
C
TIP36B -80
TIP36C
TIP36/36A VCE=-30V; IB=0
TIP36B/36C V
TIP36 VCE=-40V;VEB=0
TIP36A VCE=-60V;VEB=0
TIP36B VCE=-80V;VEB=0
=-60V; IB=0
CE
-100
-1.0 mA
-0.7 mA
V
I
Emitter cut-off current VEB=-5V; IC=0 -1.0 mA
EBO
h
DC current gain IC=-1.5A ; VCE=-4V 25
FE-1
h
DC current gain IC=-15A ; VCE=-4V 15 75
FE-2
fT Transition frequency IC=-1A ; VCE=-10V 3 MHz
2
TIP36C V
=-100V;VEB=0
CE
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors TIP36/36A/36B/36C
PACKAGE OUTLINE
3
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
Page 4
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors TIP36/36A/36B/36C
4
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