
2005. 5. 16 1/2
SEMICONDUCTOR
TECHNICAL DATA
TIP35CA
TRIPLE DIFFUSED NPN TRANSISTOR
Revision No : 0
HIGH POWER AMPLIFIER APPLICATION.
FEATURES
Recommended for 75W Audio Frequency
Amplifier Output Stage.
Complementary to TIP36CA.
Icmax:25A.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=100V, IE=0
- - 10
A
Emitter Cut-off Current
I
EBO
VEB=5V, IC=0
- - 10
A
Collector-emitter Breakdown Voltage
V
(BR)CEO
IC=50mA, IB=0
100 - - V
DC Current Gain
hFE(1) (Note) VCE=5V, IC=1.5A
55 - 160
hFE(2) VCE=4V, IC=15A
15 - -
Collector-Emitter Saturation Voltage
V
CE(sat)
(1) IC=15A, IB=1.5A
- - 1.8
V
V
CE(sat)
(2) IC=25A, IB=5.0A
- - 4.0
Base-Emitter Voltage
V
BE
VCE=5V, IC=5A
- - 1.5 V
Transition Frequency
f
T
VCE=5V, IC=1A
3.0 - - MHz
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
100 V
Collector-Emitter Voltage
V
CEO
100 V
Emitter-Base Voltage
V
EBO
5 V
Collector Current
I
C
25 A
Base Current
I
B
5.0 A
Collector Power Dissipation
(Tc=25 )
P
C
125 W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Note : hFE(1) Classification R:55~110, O:80~160
A
N
O
H
D
E
d
PP
2
3
1
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
Q
F
I
G
B
K
MILLIMETERS
DIM
A
J
C
R
L
B
C
D
d
E
F
G
H
I
M
J
K
L
M
T
N
O
P
Q
R
T
_
+
15.60 0.20
_
+
4.80 0.20
_
+
19.90 0.20
_
2.00 0.20
+
_
+
1.00 0.20
_
+
3.00 0.20
_
+
3.80 0.20
_
+
3.50 0.20
_
13.90 0.20
+
_
12.76 0.20
+
_
23.40 0.20
+
1.5+0.15-0.05
_
+
16.50 0.30
_
+
1.40 0.20
_
13.60 0.20
+
_
+
9.60 0.20
_
+
5.45 0.30
_
3.20 0.10
+
_
+
18.70 0.20
0.60+0.15-0.05
TO-3P(N)-E

2005. 5. 16 2/2
TIP35CA
Revision No : 0
SWITCHING CHARACTERISTICSSWITCHING CHARACTERISTICS
2
1
0.5
0.3
0.1
TIME t (µS)
0.05
T =25 C
J
0.03
I /I =10
C
B
V =30V
CC
0.01
0.3
t
r
t
d(on)
10130350.5
10
5
3
t
stg
T =25 C
J
V =30V
CC
I /I =10
CB
I =I
B2
B1
1
TIME t (µS)
0.5
0.3
t
f
0.1
0.3 10.5 3 105
30
1K
500
FE
300
100
50
30
DC CURRENT GAIN h
10
0.2 1 3 10 300.5 5
COLLECTOR CURRENT I (A)
h - I
FE C
COLLECTOR CURRENT I (A)
C
V =4.0V
CE
T =25 C
J
C
COLLECTOR CURRENT I (A)
REVERSE BIAS SAFE OPERATING AREA
30
25
C
20
15
10
5
COLLECTOR CURRENT I (A)
0
020
COLLECTOR-EMITTER VOLTAGE V (V)
C
<
T 100 C
J
=
80
6040
100
CE
120
P - Tc
D
150
125
D
100
75
FORWARD BIAS SAFE OPERATING AREA
100
I MAX.(PULSED)*
C
50
30
C
I MAX
C
(CONTINUOUS)
10
5
3
DC
O
10mS*
P
ER
Tc=25 C
A
1.0mS*
T
IO
300µS*
N
50
1
25
POWER DISSIPATION P (W)
0
0255075 125
100 150
COLLECTOR CURRENT I (A)
CASE TEMPERATURE Tc ( C)
SINGLE NONREPETITIVE
*
0.5
PLUSE Ta=25 C
0.3
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
0.1
1 3 100
10 30
550
COLLECTOR-EMITTER VOLTAGE V (V)
200
CE