Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors TIP35/35A/35B/35C
DESCRIPTION
·With TO-3PN package
·Complement to type TIP36/36A/36B/36C
·DC current gain h
APPLICATIONS
·Designed for use in general purpose
power amplifier and switching applications.
PINNING
PIN DESCRIPTION
=25(Min)@IC=1.5A
FE
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
TIP35 40
V
CBO
V
CEO
V
EBO
IC Collector current 25 A
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage Open collector 5 V
TIP35A 60
TIP35B 80
TIP35C
TIP35 40
TIP35A 60
TIP35B 80
TIP35C
Open emitter
Open base
V
100
V
100
ICM Collector current-peak 40 A
IB Base current 5 A
T
PC Collector power dissipation
Tj Junction temperature 150
T
Storage temperature -65~150
stg
=25℃
C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
Thermal resistance junction to case 1.0 ℃/W
th j-c
125 W
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors TIP35/35A/35B/35C
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
TIP35 40
V
(SUS)CEO
V
CEsat-1
V
CEsat-2
V
BE-1
V
BE-2
I
CEO
I
CES
Collector-emitter
sustaining voltage
Collector-emitter saturation voltage IC=15A ;IB=1.5A 1.8 V
Collector-emitter saturation voltage IC=25A; IB=5A 4.0 V
Base-emitter on voltage IC=15A ; VCE=4V 2.0 V
Base-emitter on voltage IC=25A ; VCE=4V 4.0 V
Collector
cut-off current
Collector
cut-off current
TIP35A 60
=30mA ;IB=0
I
C
TIP35B 80
TIP35C
TIP35/35A VCE=30V; IB=0
TIP35B/35C V
TIP35 VCE=40V;VEB=0
TIP35A VCE=60V;VEB=0
TIP35B VCE=80V;VEB=0
=60V; IB=0
CE
100
1.0 mA
0.7 mA
V
I
Emitter cut-off current VEB=5V; IC=0 1.0 mA
EBO
h
DC current gain IC=1.5A ; VCE=4V 25
FE-1
h
DC current gain IC=15A ; VCE=4V 15 75
FE-2
fT Transition frequency IC=1A ; VCE=10V 3 MHz
2
TIP35C V
=100V;VEB=0
CE
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors TIP35/35A/35B/35C
PACKAGE OUTLINE
3
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
Page 4
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors TIP35/35A/35B/35C
4
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