Datasheet tip33a_tip33c Datasheet

TIP33A, TIP33C

NPN High−Power Transistors

Designed for general−purpose power amplifier and switching

applications.

Features

• ESD Ratings: Machine Model, C; > 400 V

Human Body Model, 3B; > 8000 V

• Epoxy Meets UL 94 V−0 @ 0.125 in

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector − Emitter Voltage TIP33A

TIP33C

Collector − Base Voltage TIP33A

TIP33C
Emitter − Base Voltage V
Collector Current − Continuous

− Peak (Note 1)
Base Current − Continuous I
Total Device Dissipation @ TC = 25°C

Derate above 25°C
Operating and Storage Junction

Temperature Range

V

CEO

V

CBO

EBO

P

TJ, T

60

100

60

100

5.0 Vdc

I

C

B

D

stg

10
15

3.0 Adc
80

0.64

–65 to

+150

Vdc

Vdc

Adc
Apk

Watts

W/°C

°C

http://onsemi.com

10 AMPERE

NPN SILICON

POWER TRANSISTORS

60 & 100 VOLT, 80 WATTS

SOT−93 (TO−218)

CASE 340D

STYLE 1

MARKING DIAGRAM

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

R

q

JC

R

q

JA

1.56 °C/W

35.7 °C/W

AYWWG

TIP33x

A = Assembly Location
Y = Year
WW = Work Week
TIP33x = Device Code
x = A or C
G = Pb−Free Package

ORDERING INFORMATION

Device Package Shipping

TIP33A TO−218 30 Units / Rail
TIP33AG TO−218

(Pb−Free)

TIP33C TO−218 30 Units / Rail
TIP33CG 30 Units / RailTO−218

(Pb−Free)

30 Units / Rail

© Semiconductor Components Industries, LLC, 2005

September, 2005 − Rev. 3

1 Publication Order Number:

TIP33C/D

TIP33A, TIP33C

ELECTRICAL CHARACTERISTICS (T

= 25_C unless otherwise noted)

C

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 2) TIP33A

(IC = 30 mA, IB = 0) TIP33C

Collector−Emitter Cutoff Current

(VCE = 30 V, IB = 0) TIP33A
(VCE = 60 V, IB = 0) TIP33C

Collector−Emitter Cutoff Current

(VCE = Rated V

CEO

, VEB = 0)

Emitter−Base Cutoff Current

(VEB = 5.0 V, IC = 0)

ON CHARACTERISTICS (Note 2)

DC Current Gain

(IC = 1.0 A, VCE = 4.0 V)
(IC = 3.0 A, VCE = 4.0 V)

Collector−Emitter Saturation Voltage

(IC = 3.0 A, IB = 0.3 A)
(IC = 10 A, IB = 2.5 A)

Base−Emitter On Voltage

(IC = 3.0 A, VCE = 4.0 V)
(IC = 10 A, VCE = 4.0 V)

DYNAMIC CHARACTERISTICS

Small−Signal Current Gain

(IC = 0.5 A, VCE = 10 V, f = 1.0 kHz)

Current−Gain — Bandwidth Product

(IC = 0.5 A, VCE = 10 V, f = 1.0 MHz)

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

V

CEO(sus)

I

CEO

I

CES

I

EBO

h

FE

V

CE(sat)

V

BE(on)

h

f

60

100

−

−

Vdc

− 0.7 mA

− 0.4 mA

− 1.0 mA

−

40
20

−

100

Vdc

−

−

1.0

4.0
Vdc

−

−

fe

T

20 − −

3.0 − MHz

1.6

3.0

http://onsemi.com

2

500

TIP33A, TIP33C

15
10

5.0

3.0

2.0

1.0

0.5

, COLLECTOR CURRENT (AMPS)

C

I

0.2

0.1

200

100

50

, DC CURRENT GAIN

20

FE

h

10

5.0

0.1 1.0

NPN
PNP

IC, COLLECTOR CURRENT (A)

Figure 1. DC Current Gain

1.0ms

10ms

SECONDARY BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMIT

TC = 25°C

2.0 3.0 5.0 7.0 30 70
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

dc

TIP33A

TIP33C

10 201.0 50 100

300ms

20

15

10

5.0

, COLLECTOR CURRENT (AMPS)

C

I

0

VCE = 4.0 V
T

= 25°C

J

10

L = 200 mH
IC/IB ≥ 5.0
V

BE(off)

TC = 100°C

20 40

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

600 80 100

= 0 to 5.0 V

Figure 2. Maximum Rated Forward Bias

Safe Operating Area

FORWARD BIAS

The Forward Bias Safe Operating Area represents the
voltage and current conditions these devices can withstand
during forward bias. The data is based on TC = 25_C; T

J(pk)

is variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10%, and must be
derated thermally for TC > 25_C.

http://onsemi.com

Figure 3. Maximum Rated Forward Bias

Safe Operating Area

REVERSE BIAS

The Reverse Bias Safe Operating Area represents the
voltage and current conditions these devices can withstand
during reverse biased turn−off. This rating is verified under
clamped conditions so the device is never subjected to an
avalanche mode.

3

TIP33A, TIP33C

PACKAGE DIMENSIONS

SOT−93 (TO−218)

CASE 340D−02

ISSUE E

C

B

U

L

S

K

4

123

Q

E

A

D

J

H

V

G

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

DIM MIN MAX MIN MAX

A −−− 20.35 −−− 0.801
B 14.70 15.20 0.579 0.598
C 4.70 4.90 0.185 0.193
D 1.10 1.30 0.043 0.051
E 1.17 1.37 0.046 0.054
G 5.40 5.55 0.213 0.219
H 2.00 3.00 0.079 0.118

J 0.50 0.78 0.020 0.031
K 31.00 REF 1.220 REF
L −−− 16.20 −−− 0.638
Q 4.00 4.10 0.158 0.161
S 17.80 18.20 0.701 0.717
U 4.00 REF 0.157 REF
V 1.75 REF 0.069

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

INCHESMILLIMETERS

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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TIP33C/D

4