Datasheet TIP 32C MBR Datasheet (FREI)

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Inchange Semiconductor Product Specification

Silicon PNP Power Transistors TIP32/32A/32B/32C

DESCRIPTION ·

·With TO-220C package

·Complement to type TIP31/31A/31B/31C

APPLICATIONS

·Medium power linear and switching applications

PINNING

PIN DESCRIPTION

1

2

3 Base

Emitter Collector;connected to

mounting base

Absolute maximum ratings(Ta=25℃)

SYMBOL PARAMETER CONDITIONS VALUE UNIT

TIP32 -40

V

CBO

V

CEO

V

EBO

IC Collector current (DC) -3 A

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage Open collector -5 V

TIP32A -60 TIP32B -80 TIP32C TIP32 -40 TIP32A -60 TIP32B -80 TIP32C

Open emitter

Open base

V

-100

V

-100

ICM Collector current-Pulse -5 A

IB Base current -1 A

PC Collector power dissipation

Tj Junction temperature 150

T

Storage temperature -65~150

stg

TC=25℃ T

=25℃

a

40

W

2

℃ ℃

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Silicon PNP Power Transistors TIP32/32A/32B/32C

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

TIP32 -40

V

CEO(SUS)

V

CEsat

VBE Base-emitter on voltage IC=-3A ; VCE=-4V -1.8 V

I

CES

I

CEO

Collector-emitter sustaining voltage

Collector-emitter saturation voltage IC=-3A ;IB=-0.375A -1.2 V

Collector cut-off current

TIP32A -60

I

=-30mA; IB=0

C

TIP32B -80

TIP32C

TIP32 VCE=-40V; VEB=0

TIP32A VCE=-60V; VEB=0

TIP32B VCE=-80V; VEB=0

TIP32C V

TIP32/32A VCE=-30V; IB=0

TIP32B/32C VCE=-60V; IB=0

=-100V; VEB=0

CE

-100

-0.2 mA

-0.3 mA

V

I

Emitter cut-off current VEB=-5V; IC=0 -1.0 mA

EBO

h

DC current gain IC=-1A ; VCE=-4V 25

FE-1

h

DC current gain IC=-3A ; VCE=-4V 10 50

FE-2

fT Transiton frequency IC=-0.5A ; VCE=-10V 3 MHz

2

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Silicon PNP Power Transistors TIP32/32A/32B/32C

PACKAGE OUTLINE

3

Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)

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Inchange Semiconductor Product Specification

Silicon PNP Power Transistors TIP32/32A/32B/32C

4