Datasheet tip31-a-b-c_tip32-a-b-c Datasheet

TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)

Complementary Silicon Plastic Power Transistors

http://onsemi.com

Designed for use in general purpose amplifier and switching

applications.

Features

• Collector−Emitter Saturation Voltage −

V

= 1.2 Vdc (Max) @ IC = 3.0 Adc

CE(sat)

• Collector−Emitter Sustaining Voltage −

V

CEO(sus)

= 40 Vdc (Min) − TIP31, TIP32 = 60 Vdc (Min) − TIP31A, TIP32A = 80 Vdc (Min) − TIP31B, TIP32B = 100 Vdc (Min) − TIP31C, TIP32C

• High Current Gain − Bandwidth Product

= 3.0 MHz (Min) @ IC = 500 mAdc

f

T

• Compact TO−220 AB Package

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector − Emitter Voltage TIP31, TIP32

Collector−Base Voltage TIP31, TIP32

Emitter−Base Voltage

Collector Current Continuous

Base Current

Total Power Dissipation

@ T

= 25°C

C

Derate above 25°C

Total Power Dissipation

@ T

= 25°C

A

Derate above 25°C

Unclamped Inductive Load Energy (Note 1)

Operating and Storage Junction

Temperature Range

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

= 1.8 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 W

1. I

C

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

TIP31A, TIP32A TIP31B, TIP32B

TIP31C, TIP32C

TIP31A, TIP32A TIP31B, TIP32B

TIP31C, TIP32C

Peak

V

CEO

V

I

P

TJ, T

E

CB

EB

C

B

40 60 80

100

40 60 80

100

5.0

3.0

5.0

1.0

D

stg

40

0.32

2.0

0.016

32

– 65 to

+ 150

Vdc

Adc

W

W/°C

W

W/°C

mJ

°C

3 AMPERE

POWER TRANSISTORS

COMPLEMENTARY SILICON

40−60−80−100 VOLTS,

40 WATTS

MARKING DIAGRAM

4

TO−220AB

CASE 221A

STYLE 1

1

2

3

TIP3xx = Device Code xx = 1, 1A, 1B, 1C,

A = Assembly Location Y = Year WW = Work Week GPb−Free Package

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

2, 2A, 2B, 2C,

ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.

TIP3xxG

AYWW

December, 2008 − Rev. 12

1 Publication Order Number:

TIP31A/D

TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction−to−Ambient

Thermal Resistance, Junction−to−Case

ELECTRICAL CHARACTERISTICS (T

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 2) TIP31, TIP32

(I

= 30 mAdc, IB = 0) TIP31A, TIP32A

C

Collector Cutoff Current (VCE = 30 Vdc, IB = 0) TIP31, TIP32, TIP31A, TIP32A

Collector Cutoff Current (VCE = 60 Vdc, IB = 0) TIP31B, TIP31C, TIP32B, TIP32C

Collector Cutoff Current

(V

= 40 Vdc, VEB = 0) TIP31, TIP32

CE

= 60 Vdc, VEB = 0) TIP31A, TIP32A

(V

CE

(V

= 80 Vdc, VEB = 0) TIP31B, TIP32B

CE

(V

= 100 Vdc, VEB = 0) TIP31C, TIP32C

CE

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

ON CHARACTERISTICS (Note 2)

DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc)

DC Current Gain (I

Collector−Emitter Saturation Voltage (IC = 3.0 Adc, IB = 375 mAdc)

Base−Emitter On Voltage (IC = 3.0 Adc, VCE = 4.0 Vdc)

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, f

Small−Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

= 3.0 Adc, VCE = 4.0 Vdc)

C

= 25°C unless otherwise noted)

C

Characteristic

TIP31B, TIP32B

TIP31C, TIP32C

= 1.0 MHz)

test

Symbol

R

q

JA

R

q

JC

Symbol

V

CEO(sus)

I

CEO

I

CES

I

EBO

h

FE

V

CE(sat)

V

BE(on)

f

T

h

fe

Min

40 60 80

100

−

25 10

−

3.0

20

Max

62.5

3.125

Max

−

0.3

200 200 200 200

1.0

−

50

1.2

1.8

−

Unit

°C/W

Unit

Vdc

mAdc

−

Vdc

MHz

−

ORDERING INFORMATION

Device Package Shipping

TIP31 TO−220 50 Units / Rail

TIP31G TO−220

(Pb−Free)

TIP31A TO−220 50 Units / Rail

TIP31AG TO−220

(Pb−Free)

TIP31B TO−220 50 Units / Rail

TIP31BG TO−220

(Pb−Free)

TIP31C TO−220 50 Units / Rail

TIP31CG TO−220

(Pb−Free)

TIP32 TO−220 50 Units / Rail

TIP32G TO−220

(Pb−Free)

TIP32A TO−220 50 Units / Rail

TIP32AG TO−220

(Pb−Free)

TIP32B TO−220 50 Units / Rail

TIP32BG TO−220

(Pb−Free)

TIP32C TO−220 50 Units / Rail

TIP32CG TO−220

(Pb−Free)

50 Units / Rail

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2

TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)

T

A

C

4.0

40

T

30

20

10

, POWER DISSIPATION (WATTS)

D

P

3.0

2.0

1.0

0

0 100

40 140

20 120

Figure 1. Power Derating

C

T

A

60

80

T, TEMPERATURE (°C)

160

TURN−ON PULSE

APPROX

+11 V

0

V

in

V

EB(off)

t

1

APPROX

+11 V

V

in

t

2

TURN−OFF PULSE

R

and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS.

B

V

CC

V

in

t

3

t1 ≤ 7.0 ns

100 < t

< 500 ms

2

< 15 ns

t

3

DUTY CYCLE ≈ 2.0% APPROX − 9.0 V

R

B

Cjd << C

R

C

eb

−4.0 V

Figure 2. Switching Time Equivalent Circuit

SCOPE

t, TIME (ms)

0.07

0.05

0.03

0.02

2.0

1.0

0.7

tr @ VCC = 30 V

0.5

0.3 tr @ VCC = 10 V

0.1

0.05 0.3 0.5

0.03

0.1

IC, COLLECTOR CURRENT (AMP)

Figure 3. Turn−On Time

td @ V

EB(off)

1.0

IC/IB = 10 T

= 25°C

J

= 2.0 V

3.0

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TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)

1.0

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.01

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

D = 0.5

0.2

0.1

Z

= r(t) R

q

0.05

0.02

0.01

SINGLE PULSE

0.02 0.05 0.2 0.5 2.0 5.0 200 50010 20 50

1.0 1.0 100

t, TIME (ms)

JC(t)

R

(t) = 3.125°C/W MAX

q

JC

D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t T

- TC = P

J(pk)

Figure 4. Thermal Response

P

q

JC

1

Z

q

(pk)

JC(t)

(pk)

t

1

DUTY CYCLE, D = t

t

2

1/t2

1.0 k

10

5.0

≤ 150°C

J

5.0ms

= 25°C

C

TIP31A, TIP32A TIP31B, TIP32B TIP31C, TIP32C

2.0

1.0

0.5

, COLLECTOR CURRENT (AMP)

C

0.2

I

0.1

CURVES APPLY BELOW RATED V

SECONDARY BREAKDOWN LIMITED @ T THERMAL LIMIT @ T (SINGLE PULSE) BONDING WIRE LIMIT

CEO

10 205.0 50 100

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 5. Active Region Safe Operating Area

3.0

2.0 ts′

1.0

0.7

0.5

0.3

0.2

t, TIME (s)μ

0.1

0.07

0.05

0.03

tf @ VCC = 30 V

tf @ VCC = 10 V

0.05 0.1 0.2 0.70.03 0.3 0.50.07

I

, COLLECTOR CURRENT (AMP)

C

Figure 6. Turn−Off Time

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

100ms

breakdown. Safe operating area curves indicate I limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater

1.0ms

dissipation than the curves indicate.

The data of Figure 5 is based on T variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T v 150°C. T Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.

IB1 = I

B2

IC/IB = 10

′ = ts - 1/8 t

t

s

TJ = 25°C

1.0 2.0 3.0 0.2 0.5 1.0 5.00.1 2.0 3.00.3

f

300

200

100

70

CAPACITANCE (pF)

50

30

= 150°C; TC is

J(pk)

may be calculated from the data in

J(pk)

TJ = +25°C

C

eb

10 20 4030

, REVERSE VOLTAGE (VOLTS)

V

R

Figure 7. Capacitance

C

− V

C

CE

J(pk)

cb

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TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)

500

300

100

, DC CURRENT GAIN

FE

h

V, VOLTAGE (VOLTS)

TJ = 150°C

25°C

70 50

-55°C

30

10

7.0

5.0

0.05 0.07 0.3 3.00.03

0.1

Figure 8. DC Current Gain Figure 9. Collector Saturation Region

1.4 TJ = 25°C

1.2

1.0

0.8

V

BE(sat)

@ IC/IB = 10

0.6

0.4

V

0.2

0

0.003

0.005 0.01 0.02 0.03 0.05 0.1

@ IC/IB = 10

CE(sat)

I

, COLLECTOR CURRENT (AMPS)

C

Figure 10. “On” Voltages

0.7 1.00.5

VBE @ VCE = 2.0 V

0.2 0.3 0.5 1.0 2.0 3.0

VCE = 2.0 V

2.0

TJ = 25°C

1.6

1.2

IC = 0.3 A

1.0 A 3.0 A

0.8

0.4

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

V

0

2.0 5.0 20 10001.0

10

100 200 50050

IB, BASE CURRENT (mA)IC, COLLECTOR CURRENT (AMP)

+2.5

+2.0

+1.5

*APPLIES FOR IC/IB ≤ hFE/2

T

= -65°C TO +150°C

J

+1.0

+0.5

*qVC FOR V

CE(sat)

0

-0.5

-1.0

-1.5

-2.0

, TEMPERATURE COEFFICIENTS (mV/ C)°θ

V

qVB FOR V

BE

-2.5

0.003 0.005 0.01 0.02 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0

IC, COLLECTOR CURRENT (AMP)

Figure 11. Temperature Coefficients

3

10

VCE = 30 V

2

10

TJ = 150°C

1

10

0

10

-1

10

, COLLECTOR CURRENT (A)μI

-2

C

10

-3

10

-0.4

100°C

REVERSE FORWARD

25°C

I

CES

-0.3 -0.2 -0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6

, BASE−EMITTER VOLTAGE (VOLTS)

V

BE

7

10

6

10

5

10

4

10

3

10

, EXTERNAL BASE-EMITTER RESISTANCE (OHMS)

2

10

BE

20 60 80 100 120 16014040

R

IC = 10 x I

CES

IC ≈ I

CES

IC = 2 x I

CES

(TYPICAL I

CES

VALUES

OBTAINED FROM FIGURE 12)

TJ, JUNCTION TEMPERATURE (°C)

VCE = 30 V

Figure 12. Collector Cut−Off Region Figure 13. Effects of Base−Emitter Resistance

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TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)

PACKAGE DIMENSIONS

TO−220

CASE 221A−09

ISSUE AF

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

SEATING

−T−

PLANE

B

4

Q

123

F

T

A

U

C

S

H

K

Z

L

V

R

J

G

D

N

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.

DIM MIN MAX MIN MAX

A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.161 3.61 4.09 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 J 0.014 0.025 0.36 0.64 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 --- 1.15 --- Z --- 0.080 --- 2.04

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

MILLIMETERSINCHES

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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TIP31A/D

6