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COMPLEMENTARY SILICON POWER
■ SGS-THOMSONPREFERREDSALESTYPES
APPLICATION
■ LINEAR AND SWITCHINGINDUSTRIAL
EQUIPMENT
DESCRIPTION
The TIP31A and TIP31C are silicon
epitaxial-base NPN transistors in Jedec TO-220
plastic package, intented for use in medium
power linear and switchingapplications.
TIP32B is PNP power transistor.The
complementary PNP types for TIP31A and
TIP31Care TIP32A and TIP32C.
TIP31A/31C
TIP32A/32B/32C
TRANSISTORS
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN TIP31A TIP31C
PNP* TIP32A TIP32B TIP32C
V
V
V
I
P
T
* For PNPtypesvoltageand current values arenegative
September1997
Collector-Base Voltage (IE= 0) 60 80 100 V
CBO
Colle c t o r -Emitter Voltage ( IB= 0 ) 60 80 100 V
CEO
Emitter-Base Voltage(IC=0) 5 V
EBO
Collector Current 3 A
I
C
Collector Peak Current 5 A
CM
Base Current 1 A
I
B
Tota l Dissipat ion at T
tot
Storage Temperature -65 to 150
stg
Max. Operating JunctionTemperature 150
T
j
T
case
amb
≤ 25oC
≤ 25oC
40
2
W
W
o
C
o
C
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TIP31A/TIP31C/TIP32A/TIP32B/TIP32C
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
3.12
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Ty p. Max. Unit
I
CEO
Collector Cut-off
Curren t (I
B
=0)
for TIP31A/32A
VCE=30V
0.3
for TIP31C/32B/32C
V
I
CES
I
EBO
V
CEO(sus)
V
CE(sat)
Collector Cut-off
Curren t (V
BE
=0)
Emitter Cut-off Current
(I
=0)
C
∗ Collector-Emitter
Sustaining Voltage
(I
=0)
B
∗ Collector-Emitter
=60V
CE
for TIP31A/32A V
for TIP/32B V
for TIP31C/32C V
=5V 1 mA
V
EB
I
=30mA
C
for TIP31A/32A
for TIP32B
for TIP31C/32C
CE
CE
CE
=60V
=80V
= 100 V
60
80
100
IC=3A IB= 375 mA 1.2 V
0.3
0.2
0.2
0.2
Saturation Voltage
∗ Base-Emitt er V o ltage IC=3A VCE=4V 1.8 V
V
BE
h
∗ DC Current Gain IC=1A VCE=4V
FE
h
Small Signall Current
fe
Gain
I
=3A VCE=4V
C
IC=0.5A VCE=10V
f=1KHz
I
=0.5A VCE=10V
C
f=1KHz
∗ Pulsed: pulse duration= 300µs, duty cycle ≤ 2%
ForPNP types voltage andcurrent valuesare negative.
25
10
20
3
50
mA
mA
mA
mA
mA
V
V
V
Safe OperatingArea Derating Curves
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TIP31A/TIP31C/TIP32A/TIP32B/TIP32C
DC Current Gain (NPN type)
Collector-Emitter Saturation Voltage (NPN type)
DC Current Gain (PNP type)
Collector-Emitter Saturation Voltage (PNP type)
Base-EmitterSaturation Voltage (NPNtype)
Collector-Base Capacitance (PNP type)
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TIP31A/TIP31C/TIP32A/TIP32B/TIP32C
TO-220MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
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P011C
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TIP31A/TIP31C/TIP32A/TIP32B/TIP32C
Informationfurnished is believed to be accurate andreliable. However, SGS-THOMSONMicroelectronicsassumes no responsabilityfor the
consequencesof use of such informationnor for any infringementof patents or other rightsof third parties which may results from its use. No
license isgrantedby implicationor otherwise underanypatent or patentrights of SGS-THOMSON Microelectronics. Specifications mentioned
in thispublication are subjectto change without notice. This publicationsupersedes and replacesall informationpreviously supplied.
SGS-THOMSON Microelectronicsproductsarenotauthorizedfor useascritical componentsin lifesupportdevices or systemswithoutexpress
written approvalof SGS-THOMSONMicroelectonics.
1997 SGS-THOMSONMicroelectronics - Printedin Italy - All Rights Reserved
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