Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon NPN Power Transistors TIP31/31A/31B/31C
DESCRIPTION ·
·With TO-220C package
·Complement to type TIP32/32A/32B/32C
APPLICATIONS
·Medium power linear switching
applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
TIP31 40
V
V
V
CBO
CEO
EBO
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage Open collector 5 V
TIP31A 60
TIP31B 80
TIP31C
TIP31 40
TIP31A 60
TIP31B 80
TIP31C
Open emitter
Open base
V
100
V
100
IC Collector current (DC) 3 A
ICM Collector current-Pulse 5 A
IB Base current 1 A
PC Collector power dissipation
Tj Junction temperature 150 ℃
T
Storage temperature -65~150 ℃
stg
TC=25℃ 40
T
=25℃
a
w
2
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon NPN Power Transistors TIP31/31A/31B/31C
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
TIP31 40
V
CEO(SUS)
V
CEsat
VBE Base-emitter on voltage IC=3A ; VCE=4V 1.8 V
I
CES
I
CEO
I
EBO
Collector-emitter
sustaining voltage
Collector-emitter saturation voltage IC=3A IB=0.375A 1.2 V
Collector
cut-off current
Collector
cut-off current
Emitter cut-off current VEB=5V; IC=0 1.0 mA
TIP31A 60
I
=30mA; IB=0
C
TIP31B 80
TIP31C
TIP31 VCE=40V; VEB=0
TIP31A VCE=60V; VEB=0
TIP31B VCE=80V; VEB=0
TIP31C VCE=100V; VEB=0
TIP31/31A VCE=30V; IB=0
TIP31B/31C V
=60V; IB=0
CE
100
0.2 mA
0.3 mA
V
h
DC current gain IC=1A ; VCE=4V 25
FE-1
h
DC current gain IC=3A ; VCE=4V 10 50
FE-2
fT Transiton frequency IC=0.5A ; VCE=10V 3 MHz
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon NPN Power Transistors TIP31/31A/31B/31C
PACKAGE OUTLINE
3
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
Page 4
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon NPN Power Transistors TIP31/31A/31B/31C
4
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