Datasheet tip3055_tip2955 Datasheet

Page 1
TIP3055 (NPN),
Î
Î
Î
Î
TIP2955 (PNP)
Complementary Silicon Power Transistors
Features
• DC Current Gain −
hFE= 20−70 @ IC
= 4.0 Adc
• Collector−Emitter Saturation Voltage −
V
• Excellent Safe Operating Area
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Collector − Emitter Voltage Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Base Current Total Power Dissipation @ TC = 25_C
Derate above 25_C Operating and Storage Junction
ОООООООООО
Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
= 1.1 Vdc (Max) @ IC
CE(sat)
= 4.0 Adc
Rating
Characteristic
Symbol
V
CEO
V
CER
V
CB
V
EB
I
C
I
B
P
D
TJ, T
stg
Î
Symbol
R
q
JC
R
q
JA
Value
60 70
100
7.0 1 5
7.0 90
0.72
–65 to
ÎÎ
+150
Max
1.39
35.7
Unit
Vdc Vdc Vdc Vdc Adc Adc
W
W/_C
_C
Î
Unit
_C/W _C/W
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15 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
60 VOLTS, 90 WATTS
SOT−93 (TO−218)
CASE 340D
STYLE 1
MARKING DIAGRAM
AYWWG
TIPxx55
A = Assembly Location Y = Year WW = Work Week TIPxx55 = Device Code xx = 30 or 29 G = Pb−Free Package
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
September, 2005 − Rev. 6
See detailed ordering and shipping information in the package
ORDERING INFORMATION
dimensions section on page 2 of this data sheet.
1 Publication Order Number:
TIP3055/D
Page 2
TIP3055 (NPN), TIP2955 (PNP)
ÎÎÎ
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ORDERING INFORMATION
Device Package Shipping
TIP3055 SOT−93 (TO−218) 30 Units / Rail TIP3055G SOT−93 (TO−218)
(Pb−Free) TIP2955 SOT−93 (TO−218) 30 Units / Rail TIP2955G SOT−93 (TO−218)
(Pb−Free)
30 Units / Rail
30 Units / Rail
ELECTRICAL CHARACTERISTICS (T
= 25_C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 30 mAdc, IB = 0)
ОООООООООООООООООООО
Collector Cutoff Current
(VCE = 70 Vdc, RBE = 100 Ohms)
Collector Cutoff Current
ОООООООООООООООООООО
(VCE = 30 Vdc, IB = 0)
Collector Cutoff Current
(VCE = 100 Vdc, V
ОООООООООООООООООООО
BE(off)
= 1.5 Vdc)
Emitter Cutoff Current
(VBE = 7.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 4.0 Adc, VCE = 4.0 Vdc)
ОООООООООООООООООООО
(IC = 10 Adc, VCE = 4.0 Vdc)
ОООООООООООООООООООО
Collector−Emitter Saturation Voltage
(IC = 4.0 Adc, IB = 400 mAdc)
ОООООООООООООООООООО
(IC = 10 Adc, IB = 3.3 Adc)
Base−Emitter On Voltage
(IC = 4.0 Adc, VCE = 4.0 Vdc)
ОООООООООООООООООООО
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 30 Vdc, t = 1.0 s; Nonrepetitive)
DYNAMIC CHARACTERISTICS
Current Gain — Bandwidth Product
ОООООООООООООООООООО
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)
Small−Signal Current Gain
(VCE = 4.0 Vdc, IC = 1.0 Adc, f = 1.0 kHz)
ОООООООООООООООООООО
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%. NOTE: For additional design curves, refer to electrical characteristics curves of 2N3055.
Symbol
V
CEO(sus)
ÎÎÎ
I
CER
I
CEO
ÎÎÎ
I
CEV
ÎÎÎ
I
EBO
h
FE
ÎÎÎ
ÎÎÎ
V
CE(sat)
ÎÎÎ
V
BE(on)
ÎÎÎ
I
s/b
f
T
ÎÎÎ
h
fe
ÎÎÎ
Min
60
Î
−
−
Î
−
Î
−
20
5.0
−
−
−
Î
3.0
2.5
Î
15
Max
−
ÎÎ
1.0
0.7
ÎÎ
5.0
ÎÎ
5.0
ÎÎ
70
−
ÎÎ
1.1
ÎÎ
3.0
1.8
ÎÎ
−
−
ÎÎ
−
ÎÎ
Unit
Vdc
Î
mAdc
mAdc
Î
mAdc
Î
mAdc
−
Î
Î
Vdc
Î
Vdc
Î
Adc
MHz
Î
kHz
Î
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2
Page 3
1000
TIP3055 (NPN), TIP2955 (PNP)
VCE = 4.0 V TJ = 25°C
100
50 30
20
10
5.0
3.0
2.0
1.0
0.5
, COLLECTOR CURRENT (AMPS)
C
0.3
I
0.2
0.1
1.0 2.0 4.0 6.0 10 20
SECONDARY BREAKDOWN LIMIT BONDING WIRE LIMIT THERMAL LIMIT @ TC = 25°C
TJ = 150°C
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
dc
100
, DC CURRENT GAIN
FE
h
TIP3055 TIP2955
10
0.1
0.2 0.5 0.7 3.0 5.0 IC, COLLECTOR CURRENT (AMP)
1.0 2.00.3 7.0 10
Figure 1. DC Current Gain
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
1.0ms
10ms
300 ms
breakdown. Safe operating area curves indicate I limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 2 is based on TC = 25_C; T
C
− V
J(pk)
CE
is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated for temperature.
40 60
Figure 2. Maximum Rated Forward Bias
Safe Operating Area
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3
Page 4
TIP3055 (NPN), TIP2955 (PNP)
PACKAGE DIMENSIONS
SOT−93 (TO−218)
CASE 340D−02
ISSUE E
C
B
U
L
S
K
4
123
Q
E
A
D
J
H
V
G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
DIM MIN MAX MIN MAX
A −−− 20.35 −−− 0.801 B 14.70 15.20 0.579 0.598 C 4.70 4.90 0.185 0.193 D 1.10 1.30 0.043 0.051 E 1.17 1.37 0.046 0.054 G 5.40 5.55 0.213 0.219 H 2.00 3.00 0.079 0.118 J 0.50 0.78 0.020 0.031 K 31.00 REF 1.220 REF L −−− 16.20 −−− 0.638 Q 4.00 4.10 0.158 0.161 S 17.80 18.20 0.701 0.717 U 4.00 REF 0.157 REF V 1.75 REF 0.069
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
INCHESMILLIMETERS
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TIP3055/D
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