Page 1
TIP29D, TIP29E, TIP29F
NPN SILICON POWER TRANSISTORS
PRODUCT INFORMATION
1
JULY 1968 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
● 30 W at 25°C Case Temperature
● 1 A Continuous Collector Current
● 3 A Peak Collector Current
● Customer-Specified Selections Available
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.24 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= 0.4 A, RBE = 100 Ω,
V
BE(off)
= 0, RS = 0.1 Ω, VCC = 20 V.
RATING SYMBOL VALUE UNIT
Collector-base voltage (I
E
= 0)
TIP29D
TIP29E
TIP29F
V
CBO
160
180
200
V
Collector-emitter voltage (I
B
= 0)
TIP29D
TIP29E
TIP29F
V
CEO
120
140
160
V
Emitter-base voltage V
EBO
5 V
Continuous collector current I
C
1 A
Peak collector current (see Note 1) I
CM
3 A
Continuous base current I
B
0.4 A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) P
tot
30 W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) P
tot
2 W
Unclamped inductive load energy (see Note 4) ½LI
C
2
32 mJ
Operating junction temperature range T
j
-65 to +150 °C
Storage temperature range T
stg
-65 to +150 °C
Lead temperature 3.2 mm from case for 10 seconds T
L
250 °C
Page 2
TIP29D, TIP29E, TIP29F
NPN SILICON POWER TRANSISTORS
2
JULY 1968 - REVISED MARCH 1997
PRODUCT INFORMATION
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
†
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
I
C
= 30 mA
(see Note 5)
IB = 0
TIP29D
TIP29E
TIP29F
120
140
160
V
I
CES
Collector-emitter
cut-off current
V
CE
= 160 V
V
CE
= 180 V
V
CE
= 200 V
V
BE
= 0
V
BE
= 0
V
BE
= 0
TIP29D
TIP29E
TIP29F
0.2
0.2
0.2
mA
I
CEO
Collector cut-off
current
V
CE
= 90 V IB= 0 0.3 mA
I
EBO
Emitter cut-off
current
V
EB
= 5 V IC= 0 1 mA
h
FE
Forward current
transfer ratio
VCE = 4 V
V
CE
= 4 V
I
C
= 0.2 A
I
C
= 1 A
(see Notes 5 and 6)
40
15
V
CE(sat)
Collector-emitter
saturation voltage
I
B
= 125 mA IC= 1 A (see Notes 5 and 6) 0.7 V
V
BE
Base-emitter
voltage
V
CE
= 4 V IC= 1 A (see Notes 5 and 6) 1.3 V
h
fe
Small signal forward
current transfer ratio
V
CE
= 10 V IC= 0.2 A f = 1 kHz 20
|hfe|
Small signal forward
current transfer ratio
V
CE
= 10 V IC= 0.2 A f = 1 MHz 3
thermal characteristics
PARAMETER MIN TYP MAX UNIT
R
θJC
Junction to case thermal resistance 4.17 °C/W
R
θJA
Junction to free air thermal resistance 62.5 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS
†
MIN TYP MAX UNIT
t
on
Turn-on time IC = 1 A
V
BE(off)
= -4.3 V
I
B(on)
= 0.1 A
R
L
= 30 Ω
I
B(off)
= -0.1 A
t
p
= 20 µs, dc ≤ 2%
0.5 µs
t
off
Turn-off time 2 µs
Page 3
3
JULY 1968 - REVISED MARCH 1997
TIP29D, TIP29E, TIP29F
NPN SILICON POWER TRANSISTORS
PRODUCT INFORMATION
TYPICAL CHARACTERISTICS
Figure 1. Figure 2.
Figure 3.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
IC - Collector Current - A
0·001 0·01 0·1 1·0
h
FE
- DC Current Gain
1
10
100
1000
TCS631AD
VCE = 4 V
TC = 25°C
tp = 300 µs, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
IB - Base Current - mA
0·1 1·0 10 100 1000
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
0·01
0·1
1·0
10
TCS631AE
IC = 100 mA
IC = 300 mA
IC = 1 A
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
IC - Collector Current - A
0·01 0·1 1·0
V
BE
- Base-Emitter Voltage - V
0·5
0·6
0·7
0·8
0·9
1·0
TCS631AF
VCE = 4 V
TC = 25°C
Page 4
TIP29D, TIP29E, TIP29F
NPN SILICON POWER TRANSISTORS
4
JULY 1968 - REVISED MARCH 1997
PRODUCT INFORMATION
MAXIMUM SAFE OPERATING REGIONS
Figure 4.
THERMAL INFORMATION
Figure 5.
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
VCE - Collector-Emitter Voltage - V
1·0 10 100 1000
I
C
- Collector Current - A
0·01
0·1
1·0
10
100
SAS631AD
TIP29D
TIP29E
TIP29F
tp = 300 µs, d = 0.1 = 10%
tp = 1 ms, d = 0.1 = 10%
tp = 10 ms, d = 0.1 = 10%
DC Operation
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TC - Case Temperature - °C
0 25 50 75 100 125 150
P
tot
- Maximum Power Dissipation - W
0
10
20
30
40
TIS631AB
Page 5
5
JULY 1968 - REVISED MARCH 1997
TIP29D, TIP29E, TIP29F
NPN SILICON POWER TRANSISTORS
PRODUCT INFORMATION
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
MECHANICAL DATA
TO220
ALL LINEAR DIMENSIONS IN MILLIMETERS
ø
1,23
1,32
4,20
4,70
1 2 3
0,97
0,61
see Note C
see Note B
10,0
10,4
2,54
2,95
6,0
6,6
14,55
15,90
12,7
14,1
3,5
6,1
1,07
1,70
2,34
2,74
4,88
5,28
3,71
3,96
0,41
0,64
2,40
2,90
VERSION 2 VERSION 1
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
MDXXBE
Page 6
TIP29D, TIP29E, TIP29F
NPN SILICON POWER TRANSISTORS
6
JULY 1968 - REVISED MARCH 1997
PRODUCT INFORMATION
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited
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