Datasheet TIP29CG Specification

TIP29, A, B, C (NPN),
TIP30, A, B, C (PNP)

Complementary Silicon
Plastic Power Transistors

Designed for use in general purpose amplifier and switching

applications. Compact TO−220 package.

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Features

• These Devices are Pb−Free and are RoHS Compliant*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector − Emitter Voltage

TIP29G, TIP30G
TIP29AG, TIP30AG
TIP29BG, TIP30BG
TIP29CG, TIP30CG

Collector − Base Voltage

TIP29G, TIP30G
TIP29AG, TIP30AG
TIP29BG, TIP30BG
TIP29CG, TIP30CG

Emitter − Base Voltage V

Collector Current − Continuous I

Collector Current − Peak I

Base Current I

Total Power Dissipation

@ TC = 25°C
Derate above 25°C

Total Power Dissipation

@ T

= 25°C

A

Derate above 25°C

Unclamped Inductive Load Energy
(Note 1)

Operating and Storage Junction
Temperature Range

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

1. This rating based on testing with L
= 1.8 A, P.R.F = 10 Hz

I

C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient

Thermal Resistance, Junction−to−Case

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

V

CEO

V

CB

EB

C

CM

B

P

D

P

D

E 32 mJ

TJ, T

stg

= 20 mH, RBE = 100 W, VCC = 10 V,

C

R

R

40
60
80

100

40
60
80

100

5.0 Vdc

1.0 Adc

3.0 Adc

0.4 Adc

30

0.24

2.0

0.016

– 65 to + 150 °C

q

JA

q

JC

62.5 °C/W

4.167 °C/W

Vdc

Vdc

W/°C

W/°C

W

W

1 AMPERE

POWER TRANSISTORS

COMPLEMENTARY SILICON

40, 60, 80, 100 VOLTS,

80 WATTS

PNP NPN

COLLECTOR

2,4

1

BASE

1

2

3

3

EMITTER

BASE

4

MARKING DIAGRAM

TIPxxxG

AYWW

TIPxxx = Device Code:

A = Assembly Location
Y = Year
WW = Work Week
G=Pb−Free Package

29, 29A, 29B, 29C
30, 30A, 30B, 30C

ORDERING INFORMATION

See detailed ordering and shipping information on page 4 of
this data sheet.

COLLECTOR

2,4

1

3

EMITTER

TO−220

CASE 221A

STYLE 1

© Semiconductor Components Industries, LLC, 2014

November, 2014 − Rev. 13

1 Publication Order Number:

TIP29B/D

TIP29, A, B, C (NPN), TIP30, A, B, C (PNP)

ELECTRICAL CHARACTERISTICS (T

Characteristic

= 25°C unless otherwise noted)

C

Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage

(I

= 30 mAdc, IB = 0) (Note 2)

C

TIP29G, TIP30G
TIP29AG, TIP30AG
TIP29BG, TIP30BG
TIP29CG, TIP30CG

Collector Cutoff Current

(V

= 30 Vdc, IB = 0)

CE

TIP29G, TIP29AG, TIP30G, TIP30AG

V

CEO(sus)

I

CEO

40
60
80

100

−

Vdc

−

−

−

−

mAdc

0.3

(VCE = 60 Vdc, IB = 0)

TIP29BG, TIP29CG, TIP30BG, TIP30CG

Collector Cutoff Current

(V

= 40 Vdc, VEB = 0)

CE

TIP29G, TIP30G

= 60 Vdc, VEB = 0)

(V

CE

TIP29AG, TIP30AG

(V

= 80 Vdc, VEB = 0)

CE

TIP29BG, TIP30BG

(V

= 100 Vdc, VEB = 0)

CE

TIP29CG, TIP30CG

Emitter Cutoff Current

(V

= 5.0 Vdc, IC = 0)

BE

I

CES

I

EBO

−

−

−

−

−

0.3

200

200

200

200

− 1.0

mAdc

mAdc

ON CHARACTERISTICS (Note 2)

DC Current Gain

(I

= 0.2 Adc, VCE = 4.0 Vdc)

C

= 1.0 Adc, VCE = 4.0 Vdc)

(I

C

Collector−Emitter Saturation Voltage

(I

= 1.0 Adc, IB = 125 mAdc)

C

Base−Emitter On Voltage

(IC = 1.0 Adc, VCE = 4.0 Vdc)

h

V

CE(sat)

V

BE(on)

FE

40
15

− 0.7

− 1.3

−

−

75

Vdc

Vdc

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product (Note 3)

(I

= 200 mAdc, VCE = 10 Vdc, f

C

= 1.0 MHz)

test

Small−Signal Current Gain

(I

= 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz)

C

f

T

h

fe

3.0 −

20 −

MHz

−

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%

= ⎪hfe⎪• f

3. f

T

test

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2

TIP29, A, B, C (NPN), TIP30, A, B, C (PNP)

0

500

300

100

70
50

30

, DC CURRENT GAIN

FE

h

10

7.0

5.0

0.03

APPROX

+11 V

V

V

EB(off)

APPROX

+11 V

V

in

TJ = 150°C

25°C

-55°C

0.1

0.07 1.0

0.05 0.7
IC, COLLECTOR CURRENT (AMP)

0.3

0.5

VCE = 2.0 V

Figure 1. DC Current Gain

TURN-ON PULSE

0

t

1

in

t

2

TURN-OFF PULSE

V

CC

V

in

t

3

t1 ≤ 7.0 ns

100 < t

2

t

< 15 ns

3

DUTY CYCLE ≈ 2.0%
APPROX -9.0 V

R

C

R

B

Cjd << C

eb

-4.0 V

< 500 ms

and RC VARIED TO OBTAIN

R

B

DESIRED CURRENT LEVELS.

Figure 3. Switching Time Equivalent Circuit

3.0

SCOPE

t, TIME (s)μ

3.0

2.0

1.0

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.03

ts′

tf @ VCC = 30 V

tf @ VCC = 10 V

0.1 3.01.00.05 0.3 0.50.07 0.7 2.00.2

IC, COLLECTOR CURRENT (AMP)

IB1 = I

B2

IC/IB = 10
t

′ = ts - 1/8 t

s

TJ = 25°C

f

Figure 2. Turn−Off Time

2.0

= 2.0 V

1.0

IC/IB = 10

= 25°C

T

J

1.0

0.7

0.5

0.3

t, TIME (s)μ

0.1

0.07

0.05

0.03

0.02

0.03

tr @ VCC = 30 V

tr @ VCC = 10 V

td @ V

EB(off)

0.07 0.7

0.05 0.3 0.5

0.1 3.0

IC, COLLECTOR CURRENT (AMP)

Figure 4. Turn−On Time

10

TJ = 150°C

3.0

0.1
SECOND BREAKDOWN LIMITED

THERMALLY LIMITED @ T
BONDING WIRE LIMITED

, COLLECTOR CURRENT (AMPS)

CURVES APPLY BELOW

C

I

RATED V

CEO

0.1

1.0 20 10

4.0

VCE, COLLECTOR-EMITTER VOLTAGE, (VOLTS)

= 25°C

C

TIP29, 30
TIP29A, 30A
TIP29B, 30B
TIP29C, 30C

10

1 ms

dc

40

Figure 5. Active Region Safe Operating Area

There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.

The data of Figure 5 is based on T
variable depending on conditions. Second breakdown pulse

5 ms

limits are valid for duty cycles to 10% provided T
≤ 150°C. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.

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3

= 150°C; TC is

J(pk)

C

− V

CE

J(pk)

TIP29, A, B, C (NPN), TIP30, A, B, C (PNP)

ORDERING INFORMATION

Device Package Shipping

TIP29G TO−220

(Pb−Free)

TIP29AG TO−220

(Pb−Free)

TIP29BG TO−220

(Pb−Free)

TIP29CG TO−220

(Pb−Free)

TIP30G TO−220

(Pb−Free)

TIP30AG TO−220

(Pb−Free)

TIP30BG TO−220

(Pb−Free)

TIP30CG TO−220

(Pb−Free)

50 Units / Rail

50 Units / Rail

50 Units / Rail

50 Units / Rail

50 Units / Rail

50 Units / Rail

50 Units / Rail

50 Units / Rail

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4

TIP29, A, B, C (NPN), TIP30, A, B, C (PNP)

PACKAGE DIMENSIONS

TO−220

CASE 221A−09

ISSUE AH

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

SEATING

−T−

PLANE

B

4

Q

123

F

T

A

U

C

S

H

K

Z

L

V

R

J

G

D

N

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.

DIM MIN MAX MIN MAX

A 0.570 0.620 14.48 15.75
B 0.380 0.415 9.66 10.53
C 0.160 0.190 4.07 4.83
D 0.025 0.038 0.64 0.96

F 0.142 0.161 3.61 4.09
G 0.095 0.105 2.42 2.66
H 0.110 0.161 2.80 4.10

J 0.014 0.024 0.36 0.61
K 0.500 0.562 12.70 14.27

L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79

S 0.045 0.055 1.15 1.39

T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27

V 0.045 --- 1.15 ---

Z --- 0.080 --- 2.04

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

MILLIMETERSINCHES

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TIP29B/D

5