Page 1
TIP29/TIP29A/TIP29B/TIP29C
NPN Epitaxial Silicon Transistor
Features
• Complementary to TIP30/TIP30A/TIP30B/T IP30C
1. Base 2. Collector 3. Emitter
TIP29/TIP29A/TIP29B/TIP29C — NPN Epitaxial Silicon Transistor
July 2008
Absolute Maximum Ratings T
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage : TIP29
Collector-Emitter Voltage : TIP29
Emitter-Base Voltage 5 V
Collector Current (DC) 1 A
Collector Current (Pulse) 3 A
Base Current 0.4 A
Collector Dissipation (TC=25°C) 30 W
Collector Dissipation (Ta=25°C) 2 W
Junction Temperature 150 °C
Storage Temperature - 65 ~ 150 °C
=25°C unless otherwise noted
C
: TIP29A
: TIP29B
: TIP29C
: TIP29A
: TIP29B
: TIP29C
40
60
80
100
40
60
80
100
V
V
V
V
V
V
V
V
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP29/TIP29A/TIP29B/TIP29C Rev. A 1
Page 2
TIP29/TIP29A/TIP29B/TIP29C — NPN Epitaxial Silicon Transistor
Electrical Characteristics T
=25°C unless otherwise noted
C
Symbol Parameter Test Condition Min. Max. Units
V
(sus) *Collector-Emitter Sustaining Voltage
CEO
ICEO
I
CES
IEBO
hFE
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current V
*DC Current Gain V
: TIP29
: TIP29A
: TIP29B
: TIP29C
: TIP29/29A
: TIP29B/29C
: TIP29
: TIP29A
: TIP29B
: TIP29C
IC = 30mA, IB = 0 40
60
80
100
V
= 30V, IB = 0
CE
V
= 60V, IB = 0
CE
V
= 40V, V
CE
V
= 60V, V
CE
V
= 80V, V
CE
V
= 100V, V
CE
= 5V, IC = 0 1.0 mA
EB
= 4V, IC = 0.2A
CE
V
= 4V, IC = 1A
CE
EB
EB
EB
EB
= 0
= 0
= 0
= 0
40
15 75
0.3
0.3
200
200
200
200
VCE(sat) *Collector-Emitter Saturation Voltage IC = 1A, IB = 125mA 0.7 V
VBE(sat) *Base-Emitter Saturation Voltage V
f
T
* Pulse Test: PW≤300ms, Duty Cycle≤2%
Current Gain Bandwidth Product V
= 4V, IC = 1A 1.3 V
CE
= 10V, IC = 200mA 3.0 MHz
CE
V
V
V
V
mA
mA
μA
μA
μA
μA
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP29/TIP29A/TIP29B/TIP29C Rev. A 2
Page 3
Typical Characteristics
TIP29/TIP29A/TIP29B/TIP29C — NPN Epitaxial Silicon Transistor
1000
100
10
, DC CURRENT GAIN
FE
h
1
1 10 100 1000 10000
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Satu ration Voltage
CEO
CEO
CEO
MAX.
MAX.
MAX.
MAX.
1
m
s
5
m
s
DC
10
IC(MAX) (PULSE)
IC(MAX) (DC)
1
TIP29 V
[A], COLLECTOR CURRENT
C
I
0.1
CEO
TIP29A V
TIP29B V
TIP29C V
10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
VCE = 4V
10000
1000
VBE(sat)
100
(sat)[mV], SATURATION VOLTAGE
CE
(sat), V
BE
10
V
VCE(sat)
1 10 100 1000 10000
IC/IB = 10
IC[mA], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
40
35
30
25
20
15
10
[W], POWER DISSIPATION
C
P
5
0
0 25 50 75 100 125 150 175 200
TC[oC], CASE TEMPERATURE
Figure 3. Safe Operating Area Figure 4. Power Derating
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP29/TIP29A/TIP29B/TIP29C Rev. A 3
Page 4
Mechanical Dimensions
TIP29/TIP29A/TIP29B/TIP29C — NPN Epitaxial Silicon Transistor
TO220
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP29/TIP29A/TIP29B/TIP29C Rev. A 4
Page 5
TIP29/TIP29A/TIP29B/TIP29C NPN Epitaxial Silicon TransistorTIP29/TIP29A/TIP29B/TIP29C
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP29/TIP29A/TIP29B/TIP29C Rev. A 5
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