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COMPLEMENTARY SILICON POWER
■ TIP31A, TIP31C, TIP32A AND TIP32C ARE
SGS-THOMSON PREFERRED
SALESTYPES
DESCRIPTION
The TIP31A, TIP31B and TIP31C are silicon
epitaxial-base NPN power transistors in Jedec
TO-220 plastic package, intented for use in
medium power linear and switching applications.
The complementary PNP types are TIP32A,
TIP32B and TIP32C.
TIP29A/29B/29C
TIP30A/30B/30C
TRANSISTORS
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
NPN TIP29A TIP29B TIP29C
PNP TIP30A TIP30B TIP30C
V
V
V
I
P
T
For PNP types voltage and current values are negative.
Collector-Base Voltage (IE = 0) 60 80 100 V
CBO
Collector-Emitter Voltage (IB = 0) 60 80 100 V
CEO
Emitter-Base Voltage (IC = 0) 5 V
EBO
Collector Current 1 A
I
C
Collector Peak Current 3 A
CM
Base Current 0.4 A
I
B
Total Dissipation at T
tot
T
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
case
amb
≤ 25 oC
≤ 25 oC
30
2
W
W
o
C
o
C
December 1995
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TIP29A/TIP29B/TIP29C /TI P30A/TIP30 B/TIP30C
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
4.17
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
Collector Cut-off
Current (I
= 0)
B
for TIP29A/30A
VCE = 30 V
0.3
for TIP29B/29C/30B/30C
V
I
CES
I
EBO
V
CEO(sus)
V
CE(sat)
Collector Cut-off
Current (V
BE
= 0)
Emitter Cut-off Current
(I
= 0)
C
* Collector-Emitter
Sustaining Voltage
(I
= 0)
B
* Collector-Emitter
= 60 V
CB
for TIP29A/30A V
for TIP29B/30B V
for TIP29C/30C V
= 5 V 1 mA
V
EB
= 30 mA
I
C
for TIP29A/30A
for TIP29B/30B
for TIP29C/30C
= 60 V
CE
= 80 V
CE
= 100 V
CE
60
80
100
IC = 1 A IB = 125 mA 0.7 V
0.3
0.2
0.2
0.2
Saturation Voltage
V
* Base-Emitter Voltage IC = 1 A VCE = 4 V 1.3 V
BE(on)
hFE* DC Current Gain IC = 0.2 A VCE = 4 V
I
= 1 A VCE = 4 V
C
h
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
For PNP types voltage and current values are negative.
Small Signal Current
fe
Gain
IC = 0.2 A VCE = 10 V f = 1 KHz
I
= 0.2 A VCE = 10 V f = 1 MHz203
C
40
15 75
mA
mA
mA
mA
mA
V
V
V
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E
TIP29A/TIP29B/TIP29C/TIP30A/TIP30B/TIP30C
TO-220 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
A
C
D
D1
L2
F1
L5
Dia.
G1
F
F2
L9
G
H2
L7
L6
L4
P011C
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Page 4
TIP29A/TIP29B/TIP29C/TIP30A/TIP30B/TIP30C
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of pat e nts or ot her rights o f third partie s which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SG S-THOMSON Microelectroni cs. Specifications ment ioned
in this publication are subject to cha nge wi t hout n o tice. This p u bli ca t ion sup e rsed e s and r epla ces al l inf ormat i on pr ev io us ly supplied.
SGS-THOMSON Microelectronics products are not auth orized for use as critical components in life support devices or systems without express
written approval of SGS-THOM SO N M icroelecto nics.
© 1995 SGS-THOMSON Microelectronics - Printed in Ita ly - All Right s Rese rved
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
.
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