Datasheet TIP160, TIP162, TIP161 Datasheet (Power Innovations)

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TIP160, TIP161, TIP162

NPN SILICON POWER DARLINGTONS

● 50 W at 25°C Case Temperature

SOT-93 PACKAGE

● 10 A Continuous Collector Current

● 15 A Peak Collector Current

● Maximum V

● I

CEX(sus)

7 A at rated V

of 2.8 V at IC = 6.5 A

CE(sat)

(BR)CEO

Pin 2 is in electrical contact with the mounting base.

(TOP VIEW)

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING SYMBOL VALUE UNIT

TIP160

Collector-base voltage (I

Collector-emitter voltage (I

Emitter-base voltage V Continuous collector current I Peak collector current (see Note 1) I Peak commutating anti-parallel diode current (I Continuous base current I Continuous device dissipation at (or below) 100°C case temperature (see Note 3) P Continuous device dissipation at (or below) 25°C free air temperature (see Note 4) P Operating junction temperature range T Storage temperature range T Lead temperature 3.2 mm from case for 10 seconds T

NOTES: 1. This value applies for tp ≤ 10 ms, duty cycle ≤ 10%.

2. This value applies to the total collector-terminal current when the collector is at negative potential with respect to the emitter.

3. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.

4. Derate linearly to 150°C free air temperature at the rate of 24 mW/°C.

= 0)

TIP161 TIP162 TIP160 TIP161 TIP162

= 0) (see Note 2) I

CBO

CEO

EBO

C CM EM

tot

stg

MDTRAA

320 350 380 320 350 380

5 V 10 A 15 A 10 A

1 A 50 W

3 W

-65 to +150 °C

-65 to +150 °C 260 °C

PRODUCT INFORMATION

Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.

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TIP160, TIP161, TIP162 NPN SILICON POWER DARLINGTONS

JUNE 1973 - REVISED MARCH 1997

electrical characteristics at 25°C case temperature

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

= 0 = 0 = 0

= 6.5 A = 10 A

CEO

CEX(sus)

EBO

CE(sat)

BE(sat)

Collector-emitter cut-off current

Collector-emitter sustaining current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Parallel diode forward voltage

= 320 V

= 350 V

= 380 V

= V

CLAMP

(BR)CEO

= 5 V IC= 0 100 mA

= 2.2 V IC= 4 A (see Notes 5 and 6) 200

IB = 0.1A

= 1 A

= 0.1A IC= 6.5 A (see Notes 5 and 6) 2.2 V

= 10 A IB= 0 (see Notes 5 and 6) 3.5 V

NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.

6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

TIP160 TIP161 TIP162

(see Notes 5 and 6)

1 mA

7 A

2.8

2.9

thermal characteristics

PARAMETER MIN TYP MAX UNIT

R R

Junction to case thermal resistance 1 °C/W

θJC

Junction to free air thermal resistance 41.7 °C/W

θJA

Thermal capacitance of case 1.4 J/°C

θC

resistive-load-switching characteristics at 25°C case temperature

PARAMETER TEST CONDITIONS

Delay time

Rise time 1.5 µs

Storage time 2.2 µs

Fall time 2.6 µs

†

Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

= 6.5 A

BE(off)

= -5 V

B(on)

= 5 Ω

= 100 mA

†

B(off)

= -100 mA

MIN TYP MAX UNIT

40 ns

PRODUCT INFORMATION

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NPN SILICON POWER DARLINGTONS

PARAMETER MEASUREMENT INFORMATION

24 V

L = 7 mH

TIP160, TIP161, TIP162

JUNE 1973 - REVISED MARCH 1997

Driver and Current Limiting Circuit

100

TUT

ΩΩ

0.2

Figure 1. Functional Test Circuit

16.6 ms

11.6 ms

Input Signal

Base Current

Collector Current

Collector Emitter Voltage

24 V

µµ

0.22

ΩΩ

clamp

Figure 2. Functional Test Waveforms

= 10 VV

Figure 3. Switching Test Circuit

PRODUCT INFORMATION

40 V

0.056

IRF140

1 k

Adjust for

12 V

ΩΩ

7 mH

BY205-600

ΩΩ

TUT

clamp

ΩΩ

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TIP160, TIP161, TIP162 NPN SILICON POWER DARLINGTONS

JUNE 1973 - REVISED MARCH 1997

TYPICAL CHARACTERISTICS

TYPICAL DC CURRENT GAIN

COLLECTOR CURRENT

10000

1000

100

- Typical DC Current Gain

VCE = 2.2 V tp = 300 µs, duty cycle < 2%

0·4 1·0 10 40

IC - Collector Current - A

Figure 4. Figure 5.

TCD160AA

TC = 125°C TC = 25°C TC = -30°C

COLLECTOR-EMITTER SATURATION VOLTAGE

COLLECTOR CURRENT

IC / IB = 65 tp = 300 µs, duty cycle < 2%

1·0

- Collector-Emitter Saturation Voltage - V

CE(sat)

0·1

1·0 10

IC - Collector Current - A

TCD160AB

TC = 125°C TC = 25°C TC = -30°C

COLLECTOR-EMITTER SATURATION VOLTAGE

COLLECTOR CURRENT

4·0

IC / IB = 10 tp = 300 µs, duty cycle < 2%

1·0

- Collector-Emitter Saturation Voltage - V

CE(sat)

0·4

1·0 10

IC - Collector Current - A

TCD160AD

TC = 125°C TC = 25°C TC = -30°C

Figure 6. Figure 7.

BASE-EMITTER SATURATION VOLTAGE

COLLECTOR CURRENT

3·0

IC / IB = 65 tp = 300µs, duty cycle < 2%

1·0

- Base-Emitter Saturation Voltage - V

BE(sat)

0·6

1·0 10

IC - Collector Current - A

TCP160AC

TC = -30°C TC = 25°C TC = 125°C

PRODUCT INFORMATION

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NPN SILICON POWER DARLINGTONS

MAXIMUM SAFE OPERATING REGIONS

MAXIMUM FORWARD-BIAS

SAFE OPERATING AREA

100

TC ≤≤ 100oC

1·0

DC Operation tp = 150 ms,

- Collector Current - A I

d = 1% tp = 5 ms,

d = 5%

0.1 tp = 1 ms,

d = 5% tp = 0.1 ms,

d = 5%

0·01

1·0 10 100 1000

VCE - Collector-Emitter Voltage - V

TIP160 TIP161 TIP162

SAD160AA

TIP160, TIP161, TIP162

JUNE 1973 - REVISED MARCH 1997

Figure 8.

PRODUCT INFORMATION

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TIP160, TIP161, TIP162 NPN SILICON POWER DARLINGTONS

JUNE 1973 - REVISED MARCH 1997

MECHANICAL DATA

SOT-93 3-pin plastic flange-mount package

This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.

SOT-93

4,1

4,0

12,2 MAX.

1,30 1,10

1 2

15,2 14,7

11,1 10,8

4,90 4,70

1,37 3,95 4,15

16,2 MAX.

31,0 TYP.

18,0 TYP.

1,17

0,78 0,50

2,50 TYP.

ALL LINEAR DIMENSIONS IN MILLIMETERS

NOTE A: The centre pin is in electrical contact with the mounting tab.

PRODUCT INFORMATION

MDXXAW

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TIP160, TIP161, TIP162

NPN SILICON POWER DARLINGTONS

JUNE 1973 - REVISED MARCH 1997

IMPORTANT NOTICE

Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current.

PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements.

PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used.

PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.

PRODUCT INFORMATION