Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon NPN Power Transistors TIP150/151/152
DESCRIPTION
·With TO-220C package
·DARLINGTON
APPLICATIONS
·For use in automotive ignition,switching
and motor control applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Tc=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
TIP150 300
V
CBO
V
CEO
V
EBO
IC Collector current-DC 7 A
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage Open collector 8 V
TIP151 350
TIP152
TIP150 300
TIP151 350
TIP152
Open emitter
Open base
V
400
V
400
ICM Collector current-Pulse 10 A
IB Base current-DC 1.5 A
T
PC Collector power dissipation
Tj Junction temperature 150
T
Storage temperature -65~150
stg
=25℃
C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
Thermal resistance junction to case 1.56
th j-c
80 W
℃
℃
℃/W
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon NPN Power Transistors TIP150/151/152
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
TIP150 300
V
(BR)CEO
V
(BR)CBO
V
CEsat-1
V
CEsat-2
V
CEsat-3
V
BE sat-1
V
BE sat-2
I
CEO
Collector-emitter
breakdown voltage
Collector-base
breakdown voltage
Collector-emitter saturation voltage IC=1A ,IB=10mA 1.5 V
Collector-emitter saturation voltage IC=2A ,IB=100mA 1.5 V
Collector-emitter saturation voltage IC=5A ,IB=250mA 2.0 V
Base-emitter saturation voltage IC=2A ,IB=100mA 2.2 V
Base-emitter saturation voltage IC=5A ,IB=250mA 2.3 V
Collector cut-off current
TIP151 350
TIP152
TIP150 300
TIP151 350
TIP152
TIP150 VCE=300V, IB=0
TIP151 VCE=350V, IB=0
IC=10mA, IB=0
IC=1mA, IE=0
V
400
V
400
250 μA
I
Emitter cut-off current VEB=8V; IC=0 15 mA
EBO
h
DC current gain IC=2.5A ; VCE=5V 150
FE-1
h
DC current gain IC=5A ; VCE=5V 50
FE-2
h
DC current gain IC=7A ; VCE=5V 15
FE-3
VF Diode forward voltage IF=7A 3.5 V
COB Output capacitance IE=0 ; VCB=10V;f=1MHz 150 pF
Switching times
td Delay time 0.03
tr Rise time 0.18
ts Storage time 3.5
tf Fall time
TIP152 V
=400V, IB=0
CE
VCC=250V; IC=5A
I
=-IB2=250mA
B1
tp=20μs;Duty Cycle≤2.0%
1.6
μs
μs
μs
μs
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon NPN Power Transistors TIP150/151/152
PACKAGE OUTLINE
3
Fig.2 Outline dimensions
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