Datasheet TIP145F, TIP147F Datasheet (Fairchild Semiconductor)

TIP145F/146F/147F

Monolithic Construction With Built In Base­Emitter Shunt Resistors

• High DC Current Gain : h

• Industrial Use

• Complement to TIP140F/141F/142F

PNP Epitaxial Darlington Transistor

= 1000 @ V

FE

= -4V, IC = -5A (Min.)

CE

1

TO-3PF

1.Base 2.Collector 3.Emitter

TIP145F/146F/147F

Absolute Maximum Ratings

Symbol Parameter Value Units

V

CBO

V

CEO

V

EBO

I

C

I

CP

I

B

P

C

T

J

T

STG

Collector-Emitter Voltage : TIP145F

Collector-Emitter Voltage : TIP145F

Emitter-Base Voltage - 5 V
Collector Current (DC) - 10 A
Collector Current (Pulse) - 15 A
Base Current (DC) - 0.5 A
Collector Dissipation (TC=25°C) 60 W
Junction Temperature 150 °C
Storage T emperature - 65 ~ 150 °C

Electrical Characteristics

TC=25°C unless otherwise noted

- 60
: TIP146F
: TIP147F

- 80

- 100

- 60
: TIP146F
: TIP147F

- 80

- 100

TC=25°C unless otherwise noted

Equivalent Circuit

C

V
V
V

B

V
V
V

R

18

R

20.12

R1

k

R2

Ω≅

Ω≅

k

E

Symbol Parameter Test Condition Min. Typ. Max. Units

V

(sus) Collector-Emitter Sustaining Voltage

CEO

: TIP145F
: TIP146F
: TIP147F

ICEO

Collector Cut-off Current

: TIP145F
: TIP146F
: TIP147F

I

CBO

Collector Cut-off Current

: TIP145F
: TIP146F
: TIP147F

IEBO
hFE

(sat) Collector-Emitter Saturation Voltage IC = - 5A, IB = - 10mA

V

CE

V

(sat) Base-Emitter Saturation Voltage IC = - 10A, IB = - 40mA - 3.5 V

BE

(on) Base-Emitter On Voltage V

V

BE

t

D

t

R

t

STG

t

f

©2002 Fairchild Semiconductor Corporation Rev. B, December 2002

Emitter Cut-off Current V
DC Current Gain V

Delay Time V
Rise Time 0.55 µs
Storage Time 2.5 µs
Fall Time 2.5 µs

= - 30mA, IB = 0 - 60

I

C

- 80

- 100

= - 30V, IB = 0

V

CE

= - 40V, IB = 0

V

CE

V

= - 50V, IB = 0

CE

= - 60V, IE = 0

V

CB

= - 80V, IE = 0

V

CB

V

= - 100V, IE = 0

CB

= - 5V, IC = 0 - 2 mA

BE

= - 4V, IC = - 5A

CE

= - 4V, IC = - 10A

V

CE

I

= - 10A, IB = - 40mA

C

= - 4V, IC = - 10A - 3 V

CE

= - 30V, IC = - 5A

CC

= -20mA, IB2 = 20mA

I

B1

= 6Ω

R

L

1000

500

0.15 µs

- 2

- 2

- 2

- 1

- 1

- 1

- 2

- 3

V
V
V

mA
mA
mA

mA
mA
mA

V
V

Typical Characteristics

TIP145F/146F/147F

IB = -1800µA

IB = -1600µA

IB = -1400µA

IB = -1200µA

IB = -1000µA

IB = -800µA

IB = -600µA

IB = -400µA

100000

10000

1000

, DC CURRENT GAIN

FE

h

100

-0.1 -1 -1 0 -100

IC[A], COLLECTOR CURREN T

-10

-9

-8

-7

IB = -2000µA

-6

-5

-4

-3

[A], COLLECTOR CURRENT

C

-2

I

-1

-0

-0 -1 -2 -3 -4 -5

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic Figure 2. DC current Gain

-10

VBE(sat)

-1

VCE(sat)

IC=-500I

B

-0.1

(sat)[V], SATURATION VOLTAGE

CE

[pF], CAPACITANCE
C

-1000

-100

ob

VCE = -4V

f=0.1MHz

(sat), V

BE

V

-0.01

-0.1 -1 -10 -100

IC[A], COLLECTOR CURRE NT

Figure 3. Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

DC

TIP145F
TIP146F
TIP147F

-100

-10

-1

[A], COLLECTOR CU RRENT

C

I

-0.1

-1 -10 -100 -1000

VCE[V], COLLECTOR-EMITTER V O LTAG E

Figure 5. Safe Operating Area Figure 6. Power Derating

-10

-1 -10 -100 -1000

VCB[V], COLLECTOR-BASE VOLTAG E

Figure 4. Collector Output Capacitance

80

70

60

50

40

30

20

[W], POWER DIS S IPA TIO N

C

P

10

0

0 255075100125150175

TC[oC], CASE TEMPERATURE

©2002 Fairchild Semiconductor Corporation

Rev. B, December 2002

Package Dimensions

±0.20

4.50

15.50

TO-3PF

±0.20

ø3.60

±0.20

±0.20

10.00

10°

5.50

3.00
(1.50)

TIP145F/146F/147F

±0.20

±0.20

±0.20

26.50

±0.20

14.80

±0.20

±0.20

14.50

16.50

2.00

2.00

4.00

0.75

5.45TYP

[5.45

±0.20

3.30

±0.20
±0.20

±0.20

+0.20
–0.10

±0.30

±0.20

2.00

]

±0.20

2.00

2.00

5.45TYP

[5.45

±0.20

2.50

±0.20

±0.30

±0.20

5.50

]

0.85

±0.20

16.50

±0.03

0.90

±0.20

1.50

2.00

3.30

+0.20
–0.10

±0.20

±0.20

±0.20

23.00

±0.20

22.00

Dimensions in Millimeters

©2002 Fairchild Semiconductor Corporation Rev. B, December 2002

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PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

Preliminary First Production This datasheet contains preliminary data, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Obsolete Not In Production This datasheet contains specifications on a product

©2002 Fairchild Semiconductor Corporation Rev. I1

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.