Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon PNP Darlington Power Transistors TIP145/146/147
DESCRIPTION
·With TO-3PN package
·DARLINGTON
·High DC current gain
·Complement to type TIP140/141/142
APPLICATIONS
·Designed for general–purpose amplifier and
low frequency switching applications.
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Tc=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
TIP145 -60
V
CBO
V
CEO
V
EBO
IC Collector current-DC -10 A
ICM Collector current-peak -15 A
IB Base current-DC -0.5 A
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage Open collector -5 V
TIP146 -80
TIP147
TIP145 -60
TIP146 -80
TIP147
Open emitter
Open base
V
-100
V
-100
T
PC Collector power dissipation
Tj Junction temperature 150
T
Storage temperature -65~150
stg
=25℃
C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
Thermal resistance junction to case 1.0 ℃/W
th j-c
R
Thermal resistance case to ambient 35.7 ℃/W
th j-A
125 W
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon PNP Darlington Power Transistors TIP145/146/147
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
TIP145 -60
V
CEO(SUS)
V
CEsat-1
V
CEsat-2
V
BEsat
VBE Base-emitter on voltage IC=-10A ; VCE=-4V -3.0 V
I
CBO
I
CEO
I
EBO
Collector-emitter
sustaining voltage
Collector-emitter saturation voltage IC=-5A ,IB=-10mA -2.0 V
Collector-emitter saturation voltage IC=-10A ,IB=-40mA -3.0 V
Base-emitter saturation voltage IC=-10A ,IB=-40mA -3.5 V
Collector cut-off current
Collector cut-off current
Emitter cut-off current VEB=-5V; IC=0 -2 mA
TIP146 -80
TIP147
TIP145 VCB=-60V, IE=0
TIP146 VCB=-80V, IE=0
TIP147 VCB=-100V, IE=0
TIP145 VCE=-30V, IB=0
TIP146 VCE=-40V, IB=0
TIP147 VCE=-50V, IB=0
=-30mA, IB=0
I
C
V
-100
-1 mA
-2 mA
h
DC current gain IC=-5A ; VCE=-4V 1000
FE-1
h
DC current gain IC=-10A ; VCE=-4V 500
FE-2
Switching times
td Delay time 0.15 μs
tr Rise time 0.55 μs
t
Storage time 2.5 μs
stg
tf Fall time
2
=-30 V, IC = -5.0 A,
V
CC
=-20 mA Duty Cycle≤20%
I
B
= IB2, RC & RB Varied,
I
B1
TJ = 25℃
2.5 μs
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon PNP Darlington Power Transistors TIP145/146/147
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.1mm)
3
Page 4
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon PNP Darlington Power Transistors TIP145/146/147
4
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