Page 1
TIP140F/141F/142F
Monolithic Construction With Built In BaseEmitter Shunt Resistors
• Complement to TIP145F/146F/147F
• High DC Current Gain : h
• Industrial Use
NPN Epitaxial Darlington Transistor
= 1000 @ V
FE
= 4V, IC = 5A (Min.)
CE
1
TO-3PF
1.Base 2.Collector 3.Emitter
TIP140F/141F/142F
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage : TIP140F
Collector-Emitter Voltage : TIP140F
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Emitter-Base Voltage 5 V
Collector Current (DC) 10 A
Collector Current (Pulse) 15 A
Base Current (DC) 0.5 A
Collector Dissipation (TC=25°C) 60 W
Junction Temperature 150 °C
Storage Temperature - 65 ~ 150 °C
Electrical Characteristics
TC=25°C unless otherwise noted
60
: TIP141F
: TIP142F
80
100
60
: TIP141F
: TIP142F
80
100
TC=25°C unless otherwise noted
Equivalent Circuit
C
V
V
V
B
V
V
V
R
18
R
20.12
R1
k
R2
Ω≅
Ω≅
k
E
Symbol Parameter Test Condition Min. Typ. Max. Units
V
(sus) Collector-Emitter Sustaining Voltage
CEO
: TIP140F
: TIP141F
: TIP142F
ICEO
Collector Cut-off Current
: TIP140F
: TIP141F
: TIP142F
I
CBO
Collector Cut-off Current
: TIP140F
: TIP141F
: TIP142F
IEBO
hFE
(sat) Collector-Emitter Saturation Voltage IC = 5A, IB = 10mA
V
CE
V
(sat) Base-Emitter Saturation Voltage IC = 10A, IB = 40mA 3.5 V
BE
(on) Base-Emitter On Voltage V
V
BE
t
D
t
R
t
STG
t
F
©2002 Fairchild Semiconductor Corporation Rev. B1, December 2002
Emitter Cut-off Current V
DC Current Gain V
Delay Time V
Rise Time 0.55 µs
Storage Time 2.5 µs
Fall Time 2.5 µs
= 30mA, IB = 0 60
I
C
80
100
= 30V, IB = 0
V
CE
= 40V, IB = 0
V
CE
V
= 50V, IB = 0
CE
= 60V, IE = 0
V
CB
= 80V, IE = 0
V
CB
V
= 100V, IE = 0
CB
= 5V, IC = 0 2 mA
BE
= 4V, IC = 5A
CE
= 4V, IC = 10A
V
CE
I
= 10A, IB = 40mA
C
= 4V, IC = 10A 3 V
CE
= 30V, IC = 5A
CC
= 20mA, IB2 = -20mA
I
B 1
= 6Ω
R
L
1000
500
0.15 µs
V
V
V
2
mA
2
mA
2
mA
1
mA
1
mA
1
mA
2
3
V
V
Page 2
Typical Characteristics
TIP140F/141F/142F
= 1200uA
I
B
= 1000uA
I
B
IB = 800uA
IB = 600uA
IB = 400uA
IB = 200uA
100k
10k
1k
, DC CURRENT GAIN
FE
100
h
10
0.1 1 10 100
IC[A], COLLECTOR CURRENT
10
IB = 2000uA
9
IB = 1800uA
8
IB = 1600uA
IB = 1400uA
7
6
5
4
3
[A], COLLECTOR CURRENT
C
2
I
1
0
012345
VCE[V], COLLECTOR-EMITTER VOLTAG E
Figure 1. Static Characteristics Figure 2. DC current Gain
10
1
VBE(sat)
VCE(sat)
IC=500I
B
0.1
(sat)[V], SATURATION VOLTAGE
CE
[pF], CAPACITAN CE
C
1000
100
ob
VCE = 4V
f=0.1MHz
(sat), V
BE
V
0.01
0.1 1 10 100
IC[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
100
10
1
[A], COLLECTOR CU RRENT
C
I
0.1
1 10 100 1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2002 Fairchild Semiconductor Corporation
DC
TIP140F
TIP141F
TIP142F
10
1 10 100 1000
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 4. Collector Output Capacitance
100
80
60
40
[W], POWER DISSIPATION
20
C
P
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Rev. B1, December 2002
Page 3
Package Dimensions
±0.20
4.50
15.50
TO-3PF
±0.20
ø3.60
±0.20
±0.20
10.00
10°
5.50
3.00
(1.50)
TIP140F/141F/142F
±0.20
±0.20
±0.20
26.50
±0.20
14.80
±0.20
±0.20
14.50
16.50
2.00
2.00
4.00
0.75
5.45TYP
[5.45
±0.20
3.30
±0.20
±0.20
±0.20
+0.20
–0.10
±0.30
±0.20
2.00
]
±0.20
2.00
±0.20
2.50
2.00
5.45TYP
[5.45
±0.20
5.50
±0.20
±0.30
]
0.85
±0.20
16.50
±0.03
0.90
±0.20
1.50
2.00
3.30
+0.20
–0.10
±0.20
±0.20
±0.20
23.00
±0.20
22.00
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. B1, December 2002
Page 4
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As used herein:
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which, (a) are intended for surgical implant into the body,
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when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2002 Fairchild Semiconductor Corporation Rev. I1
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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