Page 1
COMPLEMENTARY SILICON POWER
■ TIP141, TIP142, TIP145 AND TIP147 ARE
SGS-THOM SON PR EFE RRED SA LE STY PE S
■ COMPLEMEN TA RY PNP - NPN DEVI CES
■ MONOLITHI C DARLI NGT O N
CONFIGU R AT ION
■ INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
TIP140/141/142
TIP145/146/147
DARLINGTON TRANSISTORS
APPLICATIONS
■ LINEAR AND SWITCHING INDUSTRIAL
3
2
1
EQUIPMENT
DESCRIPTION
TO-218
The TIP140, TIP141 and TIP142 are silicon
epitaxial-base NPN power transistors in
monolithic Darlington configuration and are
mounted in TO-218 plastic package. They are
intented for use in power linear and switching
applications.
INTERNAL SCHEMATIC DIAGRAM
The complementary PNP types are TIP145,
TIP146 and TIP147 respectively .
Typ. = 5 KΩ R2 Typ. = 150 Ω
R
1
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
NPN TIP140 TIP141 TIP142
PNP TIP145 TIP146 TIP147
V
V
V
I
P
T
For PNP types voltage and current values are negative.
Collector-Base Voltage (IE = 0) 60 80 100 V
CBO
Collector-Emitter Voltage (IB = 0) 60 80 100 V
CEO
Emitter-Base Voltage (IC = 0) 5 V
EBO
I
Collector Current 10 A
C
Collector Peak Current 20 A
CM
Base Current 0.5 A
I
B
Total Dissipation at T
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
≤ 25 oC 125 W
case
o
C
o
C
June 1997
1/4
Page 2
TIP140 / TIP141 / TIP142 / TIP14 5 / TIP146 / TIP147
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 1
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
Collector Cut-off
Current (I
= 0)
E
for TIP140/145 V
for TIP141/146 V
for TIP142/147 V
I
CEO
Collector Cut-off
Current (I
= 0)
B
for TIP140/145 V
for TIP141/146 V
for TIP142/147 V
I
EBO
V
CEO(sus)
Emitter Cut-off Current
(I
= 0)
C
* Collector-Emitter
Sustaining Voltage
(I
= 0)
B
V
EBO
I
= 30 mA
C
for TIP140/145
for TIP141/146
for TIP142/147
V
* Collector-Emitter
CE(sat)
Saturation Voltage
V
* Base-Emitter Voltage IC = 10 A VCE = 4 V 3 V
BE(on)
h
* DC Current Gain IC = 5 A VCE = 4 V
FE
t
t
For PNP types voltage and current values are negative.
Turn-on Time IC = 10 A IB1 = 40 mA
on
Turn-off Time 4 µs
off
IC = 5 A IB = 10 mA
I
= 10 A IB = 40 mA
C
I
= 10 A VCE = 4 V
C
I
= -40 mA RL = 3 Ω
B2
= 60 V
CB
= 80 V
CB
= 100 V
CB
= 30 V
CE
= 40 V
CE
= 50 V
CE
= 5 V 2 mA
60
80
100
1000
500
0.9 µs
1
1
1
2
2
2
2
3
mA
mA
mA
mA
mA
mA
V
V
V
V
V
2/4
Page 3
TIP140 / TIP141 / TIP142 / TIP145 / TIP146 / TIP147
TO-218 (SOT-93) MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.7 4.9 0.185 0.193
C 1.17 1.37 0.046 0.054
D2.5 0.098
E 0.5 0.78 0.019 0.030
F 1.1 1.3 0.043 0.051
G 10.8 11.1 0.425 0.437
H 14.7 15.2 0.578 0.598
L2 – 16.2 – 0.637
L3 18 0.708
L5 3.95 4.15 0.155 0.163
L6 31 1.220
R – 12.2 – 0.480
Ø 4 4.1 0.157 0.161
mm inch
H
A
C
L5
E
D
L6
L3
L2
G
¯
F
R
1
2 3
P025A
3/4
Page 4
TIP140 / TIP141 / TIP142 / TIP14 5 / TIP146 / TIP147
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or ot h erwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifi cations mentioned
in this publication are subject to change without notice. This publication sup ersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
. . .
4/4
Loading...