Page 1
TIP140/141/142
Monolithic Construction With Built In BaseEmitter Shunt Resistors
• High DC Current Gain : h
• Industrial Use
• Complement to TIP145/146/147
NPN Epitaxial Silicon Darlington Transistor
= 1000 @ V
FE
= 4V, IC = 5A (Min.)
CE
1
TO-3P
1.Base 2.Collector 3.Emitter
TIP140/141/142
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage : TIP140
Collector-Emitter Voltage : TIP140
Emitter-Base Voltage 5 V
Collector Current (DC) 10 A
Collector Current (Pulse) 15 A
Base Current (DC) 0.5 A
Collector Dissipation (TC=25°C) 125 W
Junction Temperature 150 °C
Storage T emperature - 65 ~ 150 °C
Electrical Characteristics
TC=25°C unless otherwise noted
60
: TIP141
: TIP142
80
100
60
: TIP141
: TIP142
80
100
TC=25°C unless otherwise noted
Equivalent Circuit
C
V
V
V
V
B
V
V
R18kΩ≅
R20.12kΩ≅
R1
R2
E
Symbol Parameter Test Condition Min. Typ. Max. Units
V
(sus) Collector-Emitter Sustaining Voltage
CEO
: TIP140
I
= 30mA, IB = 0
C
: TIP141
: TIP142
ICEO
I
CBO
IEBO
hFE
V
(sat) Collector-Emitter Saturation Voltage IC = 5A, IB = 10mA
CE
(sat) Base-Emitter Saturation Voltage IC = 10A, IB = 40mA
V
BE
V
(on) Base-Emitter ON Voltage V
BE
t
D
t
R
t
STG
t
F
Collector Cut-off Current
: TIP140
: TIP141
: TIP142
Collector Cut-off Current
: TIP140
: TIP141
: TIP142
Emitter Cut-off Current V
DC Current Gain V
Delay Time V
Rise Time
Storage Time
Fall Time
V
= 30V, IB = 0
CE
= 40V, IB = 0
V
CE
= 50V, IB = 0
V
CE
V
= 60V, IE = 0
CB
= 80V, IE = 0
V
CB
= 100V, IE = 0
V
CB
= 5V, IC = 0
BE
= 4V, IC = 5A
CE
V
= 4V, IC = 10A
CE
= 10A, IB = 40mA
I
C
= 4V, IC = 10A
CE
= 30V, IC = 5A
CC
= 20mA, IB2 = -20mA
I
B1
R
= 6Ω
L
60
80
100
1000
500
2
2
2
1
1
1
2mA
2
3
3.5 V
3V
0.15
0.55
2.5
2.5
V
V
V
mA
mA
mA
mA
mA
mA
V
V
µs
µs
µs
µs
©2000 Fairchild Semiconductor International Rev. A, February 2000
Page 2
Typical Characteristics
TIP140/141/142
= 1200uA
I
B
= 1000uA
I
B
IB = 800uA
IB = 600uA
IB = 400uA
IB = 200uA
10
IB = 2000uA
9
IB = 1800uA
8
IB = 1600uA
IB = 1400uA
7
6
5
4
3
[A], COLLECTOR CURRENT
2
C
I
1
0
012345
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
VBE(sat)
VCE(sat)
IC=500I
100k
VCE = 4V
10k
1k
, DC CURRENT GAIN
100
FE
h
10
0.1 1 10 100
IC[A], COLLECTOR CURRENT
B
1000
100
[pF], CA PACITANCE
ob
C
f=0.1MHz
(sat), V
BE
V
0.01
0.1 1 10 100
IC[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
100
10
1
[A], COLLECTOR CURRENT
C
I
0.1
1 10 100 1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2000 Fairchild Semiconductor International
DC
TIP140
TIP141
TIP142
10
1 10 100 1000
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 4. Collector Output Capacitance
150
125
100
75
50
[W], POWER DISSIPATION
C
25
P
0
0 255075100125150175
TC[oC], CASE TEMPERATURE
Rev. A, February 2000
Page 3
Package Demensions
ø3.20
±0.10
15.60
13.60
9.60
±0.20
±0.20
±0.20
TO-3P
±0.20
3.80
4.80
1.50
±0.20
+0.15
–0.05
TIP140/141/142
±0.20
13.90
2.00
±0.20
3.00
±0.20
1.00
±0.20
5.45TYP
[5.45
±0.30
±0.20
±0.20
±0.20
12.76
19.90
23.40
±0.20
3.50
±0.30
16.50
5.45TYP
]
[5.45
±0.30
]
±0.20
18.70
1.40
0.60
±0.20
+0.15
–0.05
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. A, February 2000
Page 4
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not intended to be an exhaustive list of all such trademarks.
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E
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®
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ISOPLANAR™
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POP™
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®
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Quiet Series™
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when properly used in accordance with instructions for use
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2. A critical component is any component of a life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2000 Fairchild Semiconductor International Rev. E
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
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