Page 1
TIP120/121/122
Medium Power Linear Switching Applications
• Complementary to TIP125/126/127
TIP120/121/122
1
TO-220
1.Base 2.Collector 3.Emitter
NPN Epitaxial Darlington Transistor
Absolute Maximum Ratings
TC=25°C unless otherwise noted
Symbol Parameter Value Units
V
V
V
I
I
I
P
T
T
CBO
CEO
EBO
C
CP
B
C
J
STG
Collector-Base Voltage : TIP120
Collector-Emitter Voltage : TIP120
Emitter-Base Voltage 5 V
Collector Current (DC) 5 A
Collector Current (Pulse) 8 A
Base Current (DC) 120 mA
Collector Dissipation (Ta=25°C) 2 W
Collector Dissipation (T
C
Junction Temperature 150 °C
Storage T emperature - 65 ~ 150 °C
Electrical Characteristics
: TIP121
: TIP122
: TIP121
: TIP122
=25°C) 65 W
TC=25°C unless otherwise noted
60
80
100
60
80
100
V
V
V
V
V
V
Symbol Parameter Test Condition Min. Max. Units
V
(sus) Collector-Emitter Sustaining Voltage
CEO
: TIP120
: TIP121
= 100mA, IB = 0 60
I
C
: TIP122
ICEO
I
CBO
IEBO
hFE
(sat) * Collector-Emitter Saturation Voltage IC = 3A, IB = 12mA
V
CE
(on) * Base-Emitter ON Voltage V
V
BE
C
ob
* Pulse Test : PW≤300µs, Duty cycle ≤2%
Collector Cut-off Current
: TIP120
: TIP121
: TIP122
Collector Cut-off Current
: TIP120
: TIP121
: TIP122
Emitter Cut-off Current V
* DC Current Gain V
Output Capacitance V
= 30V, IB = 0
V
CE
= 40V, IB = 0
V
CE
V
= 50V, IB = 0
CE
= 60V, IE = 0
V
CB
V
= 80V, IE = 0
CB
= 100V, IE = 0
V
CB
= 5V, IC = 0 2 mA
BE
= 3V,IC = 0.5A
CE
= 3V, IC = 3A
V
CE
I
= 5A, IB = 20mA
C
= 3V, IC = 3A 2.5 V
CE
= 10V, IE = 0, f = 0.1MHz 200 pF
CB
Equivalent Circuit
B
R
18
R
20.12
R1
k
Ω≅
80
100
1000
1000
R2
k
Ω≅
0.5
0.5
0.5
0.2
0.2
0.2
2.0
4.0
C
E
V
V
V
mA
mA
mA
mA
mA
mA
V
V
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
Page 2
Typical characteristics
TIP120/121/122
10000
1000
, DC CURRENT GAIN
FE
h
100
0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
1000
100
[pF], CA PACITANCE
ib
[pF] C
ob
C
10
0.1 1 10 100
VCB[V], COLLECTOR-BASE VOLTAGE
[V], EMITTER-BASE VOLTAGE
V
EB
C
ib
VCE = 4V
f=0.1MHz
C
3.5
3.0
2.5
2.0
1.5
(sat)[V], SATURATION VOLTAGE
CE
1.0
(sat), V
BE
V
0.5
0.1 1 10
VBE(sat)
VCE(sat)
IC = 250I
B
IC[A], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
10
1
ob
0.1
[A], COLLECTOR CURRENT
C
I
0.01
1 10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
100us
500us
1ms
5ms
DC
TIP120
TIP121
TIP122
Figure 3. Output and Input Capacitance
vs. Reverse Voltage
80
70
60
50
40
30
20
[W], POWER DISSIPATION
C
P
10
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 5. Power Derating
©2001 Fairchild Semiconductor Corporation
Figure 4. Safe Operating Area
Rev. A1, June 2001
Page 3
Package Demensions
±0.10
(1.70)
1.30
±0.20
9.20
(1.46)
9.90
(8.70)
ø3.60
TO-220
±0.20
±0.10
(45°)
(3.70)(3.00)
±0.10
2.80
±0.20
15.90
18.95MAX.
4.50
1.30
±0.20
+0.10
–0.05
TIP120/121/122
±0.20
13.08
(1.00)
1.27
2.54TYP
±0.20
[2.54
±0.10
]
10.00
±0.20
1.52
±0.10
0.80
2.54TYP
±0.20
[2.54
±0.10
±0.30
10.08
+0.10
0.50
–0.05
2.40
±0.20
]
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
Page 4
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
CEx™
A
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
2
E
CMOS™
EnSigna™
FACT™
FACT Quiet Series™
STAR*POWER is used under license
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
®
UltraFET
VCX™
®
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2001 Fairchild Semiconductor Corporation Rev. H3
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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