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COMPLEMENTARY SILICON POWER
■ SGS-THOMSON PREFERRED SALESTYPES
DESCRIPTIO N
The TIP120, TIP121 and TIP122 are silicon
epitaxial-base NPN power transistors in
monolithic Darlington configuration Jedec TO-220
plastic package, intented for use in power linear
and switching applications.
The complementary PNP types are TIP125,
TIP126 and TIP127.
TIP120/121/122
TIP125/126/127
DARLINGTON TRANSISTORS
3
2
1
TO-220
IN TERNAL SCHEMATIC DIAGRAM
R1 Typ. = 5 KΩ R2 Typ. = 150 Ω
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN TIP120 TIP121 TIP122
PNP TIP125 TIP126 TIP127
V
V
V
I
P
T
* For PNP types volt ag e an d curr en t value s are negative .
Collector-Base Voltage (IE = 0) 60 80 100 V
CBO
Collector-Emitter Voltage (IB = 0) 60 80 100 V
CEO
Emitter-Base Voltage (IC = 0) 5 V
EBO
Collector Current 5 A
I
C
Collector Peak Current 8 A
CM
Base Current 0.1 A
I
B
Total Dissipation at T
tot
T
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
case
amb
≤ 25 oC
≤ 25 oC
65
2
W
W
o
C
o
C
October 1995
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TIP120/TIP121/TIP122/TIP125/TIP126/TIP127
THERMAL DATA
R
thj- ca se
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
1.92
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CEO
Collector Cut-off
Current (I
= 0)
B
for TIP120/125 V
for TIP121/126 V
for TIP122/127 V
I
CBO
Collector Cut-off
Current (I
= 0)
B
for TIP120/125 V
for TIP121/126 V
for TIP122/127 V
I
EBO
V
CEO(sus)
Emitter Cut-off Current
(I
= 0)
C
* Collector-Emitter
Sustaining Voltage
(I
= 0)
B
= 5 V 2 mA
V
EB
I
= 30 mA
C
for TIP120/125
for TIP121/126
for TIP122/127
V
* For PNP types voltage and current values are negative.
* Collector-Emitter
CE(sat)
Saturation Voltage
V
* Base-Emitter Voltage IC = 3 A VCE = 3 V 2.5 V
BE(on)
h
* DC Current Gain IC = 0.5 A VCE = 3 V
FE
IC = 3 A IB = 12 mA
I
= 5 A IB = 20 mA
C
I
= 3 A VCE = 3 V
C
= 30 V
CE
= 40 V
CE
= 50 V
CE
= 60 V
CE
= 80 V
CE
= 100 V
CE
60
80
100
1000
1000
0.5
0.5
0.5
0.2
0.2
0.2
2
4
mA
mA
mA
mA
mA
mA
V
V
V
V
V
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E
TIP120/TIP121/TIP122/TIP125/TIP126/TIP127
TO-220 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
A
C
D
D1
L2
F1
L5
Dia.
G1
F
F2
L9
G
H2
L7
L6
L4
P011C
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TIP120/TIP121/TIP122/TIP125/TIP126/TIP127
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of pat e nt s or ot her rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SG S-THOMSON Microelectroni cs. Specifications ment ioned
in this publication are subject to cha nge wi t hout n o tice. This p u bli ca t ion sup e rsed e s and r epla ces al l inf ormat i on pr ev io us ly supplied.
SGS-THOMSON Microelectronics products are not auth orized for use as critical components in life support devices or systems without express
written approval of SGS-THOM SO N M icroelecto nics.
© 1995 SGS-THOMSON Microelectronics - All Rights Reserved
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Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
.
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