
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon PNP Darlington Power Transistors TIP115/116/117
DESCRIPTION
·With TO-220C package
·DARLINGTON
·High DC current gain
·Low collector saturation voltage
·Complement to type TIP110/111/112
APPLICATIONS
·For industrial use
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Tc=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
TIP115 -60
V
CBO
V
CEO
V
EBO
IC Collector current-DC -2 A
ICM Collector current-Pulse -4 A
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage Open collector --5 V
TIP116 -80
TIP117
TIP115 -60
TIP116 -80
TIP117
Open emitter
Open base
V
-100
V
-100
IB Base current-DC 50 mA
TC=25℃
PC Collector power dissipation
=25℃
T
a
Tj Junction temperature 150
T
Storage temperature -65~150
stg
50
W
2
℃
℃

固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon PNP Darlington Power Transistors TIP115/116/117
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
TIP115 -60
V
CEO(SUS)
V
CEsat
VBE Base-emitter on voltage IC=-2A ; VCE=-4V -2.8 V
I
CBO
I
CEO
I
EBO
Collector-emitter
sustaining voltage
Collector-emitter saturation voltage IC=-2A ,IB=-8mA -2.5 V
Collector
cut-off current
Collector
cut-off current
Emitter cut-off current VEB=-5V; IC=0 -2 mA
TIP116 -80
TIP117
TIP115 VCB=-60V, IE=0
TIP116 VCB=-80V, IE=0
TIP117 V
TIP115 VCE=-30V, IB=0
TIP116 VCE=-40V, IB=0
TIP117 V
IC=-30mA, IB=0
=-100V, IE=0
CB
=-50V, IB=0
CE
V
-100
-1 mA
-2 mA
h
DC current gain IC=-1A ; VCE=-4V 1000
FE-1
h
DC current gain IC=-2A ; VCE=-4V 500
FE-2
Cob Output capacitance IE=0 ; VCB=-10V,f=0.1MHz 200 pF
2

固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon PNP Darlington Power Transistors TIP115/116/117
PACKAGE OUTLINE
3
Fig.2 Outline dimensions

固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon PNP Darlington Power Transistors TIP115/116/117
4