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UTC TIP110A PNP EXPITAXIAL PLANAR TRANSISTOR
LOW SATURATION VOLTAGE PNP
DARLINGTON TRANSISTOR
DESCRIPTION
The UTC TIP110A is designed for using in general purpose
amplifier and switching applications.
FEATURE
*Low VCE(sat)
*High current gain
1:BASE 2:COLLECTOR 3:EMITTER
1
TO-220
MAXIMUM RATINGS(Ta=25°C)
CHARACTERISTICS SYMBOL VALUE UNITS
Collector Base Voltage VCBO 40 V
Collector to Emitter Voltage VCEO 30 V
Emitter To base Voltage VEBO 5 V
Collector Current IC 10 A
Junction Temperature Tj 150(Max) °C
Storage Temperature Tstg -55 ~ +150 °C
Total Power Dissipations PD 65 W
CHARACTERISTICS(Ta=25°C)
SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
BVCEO IC=100mA 30 V
ICBO VCB=40V 1 µA
ICEO VCE=20V 1 µA
IEBO VEB=5V 100 nA
VCE(SAT) IC=10A,IB=10mA 2.0 V
VBE(ON) IC=5mA,VCE=2.0V 2.0 V
hFE1 IC=500mA,VCE=2.0V 2 60 K
hFE2 IC=10A,VCE=2.0V 1 20 60 K
UTC UNISONIC TECHNOLOGIES CO. LTD
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UTC TIP110A PNP EXPITAXIAL PLANAR TRANSISTOR
TYPICAL PERFORMANCE CHARACTERISTICS
CURRENT GAIN VS.
COLLECTOR CURRENT
4
10
10
OUTPUT CAPACITANCE VS.
REVERSE-BIASED VOLTAGE
3
3
10
Current Gain(Hfe)
2
10
1
10
4
10
On Voltage(mV)
3
10
1
10
5
10
4
10
3
10
2
10
Collector Current(mA)
10
2
10
Collector Current(mA)
ON VOLTAGE VS.
COLLECTOR CURRENT
2
10
Collector Current(mA)
SAFE OPERATING AREA
10
10
3
3
PT=1ms
PT=100ms
PT=1s
2
10
Output Capacitance(pF)
1
4
10
4
10
10
-1
4
10
3
10
Saturation Voltage(mV)
2
10
1
10
3
10
2
10
Switching Times(ns)
10
1 1010
Reverse-Biased Voltage
SATURATIION VOLTAGE VS.
COLLECTOR CURRENT
2
10
Collector Current(mA)
SWITCHING TIMES VS.
COLLECTOR CURRENT
3
10
Tstg
2
10
4
10
1
1
Collector-Emitter Voltage ( V )
2
10
10
1
3
10
Collector Current(mA)
UTC UNISONIC TECHNOLOGIES CO. LTD
4
10
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