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COMPLEMENTARY SILICON POWER
■ SGS-THOMSONPREFERREDSALESTYPES
■ COMPLEMENTARY PNP - NPN DEVICES
■ MONOLITHICDARLINGTON
CONFIGURATION
■ INTEGRATEDANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
■ LINEAR AND SWITCHINGINDUSTRIAL
EQUIPMENT
TIP110/112
TIP115/117
DARLINGTONTRANSISTORS
3
2
1
DESCRIPTION
The TIP110 and TIP112 are silicon epitaxial-base
TO-220
NPN transistors in monolithic Darlington
configuration mounted in Jedec TO-220 plastic
package.They are intented for use in medium
power linear and switchingapplications.
The complementary PNP types are TIP115 and
TIP117.
INTERNAL SCHEMATIC DIAGRAM
R1Typ.= 7K Ω R2Typ.= 230Ω
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN TIP110 TIP112
PNP TIP115 TIP117
V
V
V
I
P
T
* For PNPtypes voltageand current valuesare negative
Collector-Base Voltage (IE= 0) 60 100 V
CBO
Colle c t o r -Emitte r Volt a ge ( IB= 0 ) 60 100 V
CEO
Emitter-Base Voltage (IC=0) 5 V
EBO
Collector Current 2 A
I
C
Collector Peak Current 4 A
CM
Base Current 50 A
I
B
Tota l Dissipation at T
tot
Storage Temperature -65 to 150
stg
Max. Operating JunctionTemperature 150
T
j
T
case
amb
≤ 25oC
≤ 25oC
50
2
W
W
o
C
o
C
September1997
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TIP110/TIP112/TIP115/TIP117
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
2.5
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CEO
I
CBO
I
EBO
Collector Cut-off
Curren t (I
B
=0)
Collector Cut-off
Curren t (I
E
=0)
Emitter Cut-off Current
(I
=0)
C
Collector-Emitter
V
CEO(sus)
V
∗ For PNPtypes voltageand current valuesare negative.
∗
Sustaining Voltage
(I
=0)
B
Collector-Emitter
∗
CE(sat)
V
BE
h
FE
Saturation Voltage
∗ Base-Emit ter V o ltage IC=2A VCE=4V 2.8 V
DC Current Gain I
∗
= Half Rated V
V
CE
= Half Rated V
V
CB
=5V
V
EB
I
=30mA
C
for TIP110/115
for TIP112/117
I
=2A IB=8mA
C
=1A VCE=4V
C
I
=2A VCE=4V
C
CEO
CBO
2mA
1mA
2mA
60
100
2.5
500
1000
V
V
V
Safe OperatingAreas Derating Curve
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TIP110/TIP112/TIP115/TIP117
DC Current Gain (NPN type)
Collector-Emitter Saturation Voltage (NPN type)
DC Current Gain (PNPtype)
Collector-Emitter Saturation Voltage (PNP type)
Base-EmitterSaturation Voltage (NPN type)
Base-Emitter Saturation Voltage (PNP type)
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TIP110/TIP112/TIP115/TIP117
Base-EmitterOn Voltage (NPN type) Base-Emitter On Voltage (PNP type)
Freewheel Diode Forward Voltage (NPN types) FreewheelDiode Forward Voltage (PNP types)
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TIP110/TIP112/TIP115/TIP117
TO-220MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
P011C
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TIP110/TIP112/TIP115/TIP117
Informationfurnished is believed to be accurate andreliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequencesof use of such informationnor for any infringementof patents or other rightsof third parties which may results fromits use. No
license isgrantedby implicationor otherwise under anypatentor patentrights of SGS-THOMSONMicroelectronics.Specificationsmentioned
in thispublication are subjectto change without notice. This publicationsupersedes and replacesall informationpreviously supplied.
SGS-THOMSON Microelectronicsproductsarenotauthorizedforuseas criticalcomponentsin life supportdevicesor systemswithoutexpress
written approvalof SGS-THOMSONMicroelectonics.
1997 SGS-THOMSONMicroelectronics - Printed in Italy - All Rights Reserved
Australia- Brazil - Canada - China- France- Germany- Hong Kong- Italy - Japan- Korea - Malaysia- Malta - Morocco - TheNetherlands -
Singapore - Spain- Sweden - Switzerland -Taiwan - Thailand - UnitedKingdom - U.S.A
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