Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Darlington Power Transistors TIP110/111/112
DESCRIPTION
·With TO-220C package
·DARLINGTON
·High DC current gain
·Low collector saturation voltage
·Complement to type TIP115/116/117
APPLICATIONS
·For industrial use
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Tc=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
TIP110 60
V
CBO
V
CEO
V
EBO
IC Collector current-DC 2 A
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage Open collector 5 V
TIP111 80
TIP112
TIP110 60
TIP111 80
TIP112
Open emitter
Open base
V
100
V
100
ICM Collector current-Pulse 4 A
IB Base current-DC 50 mA
TC=25℃
PC Collector power dissipation
=25℃
T
a
Tj Junction temperature 150
T
Storage temperature -65~150
stg
50
W
2
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Darlington Power Transistors TIP110/111/112
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
TIP110 60
V
CEO(SUS)
V
CEsat
VBE Base-emitter on voltage IC=2A ; VCE=4V 2.8 V
I
CBO
I
CEO
I
EBO
Collector-emitter
sustaining voltage
Collector-emitter saturation voltage IC=2A ,IB=8mA 2.5 V
Collector
cut-off current
Collector
cut-off current
Emitter cut-off current VEB=5V; IC=0 2 mA
TIP111 80
TIP112
TIP110 VCB=60V, IE=0
TIP111 VCB=80V, IE=0
TIP112 V
TIP110 VCE=30V, IB=0
TIP111 VCE=40V, IB=0
TIP112 V
IC=30mA, IB=0
=100V, IE=0
CB
=50V, IB=0
CE
V
100
1 mA
2 mA
h
DC current gain IC=1A ; VCE=4V 1000
FE-1
h
DC current gain IC=2A ; VCE=4V 500
FE-2
Cob Output capacitance IE=0 ; VCB=10V,f=0.1MHz 100 pF
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Darlington Power Transistors TIP110/111/112
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Page 4
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Darlington Power Transistors TIP110/111/112
4
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