Datasheet TIP107, TIP106, TIP105 Datasheet (Fairchild Semiconductor)

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Page 1

TIP105/106/107

Monolithic Construction With Built In BaseEmitter Shunt Resistors

• High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.)

• Collector-Emitter Sustaining Voltage

• Low Collector-Emitter Saturation Voltage

• Industrial Use

• Complementary to TIP100/101/102

PNP Epitaxial Silicon Darlington Transistor

TO-220

1.Base 2.Collector 3.Emitter

TIP105/106/107

Absolute Maximum Ratings

TC=25°C unless otherwise noted

Equivalent Circuit

Symbol Parameter Value Units

CBO

CEO

EBO

STG

Collector-Base Voltage : TIP105

Collector-Emitter Voltage : TIP105

Emitter-Base Voltage - 5 V Collector Current (DC) - 8 A Collector Current (Pulse) - 15 A Base Current (DC) - 1 A Collector Dissipation (Ta=25°C) 2 W Collector Dissipation (T

Junction Temperature 150 °C Storage T emperature - 65 ~ 150 °C

Electrical Characteristics

: TIP106 : TIP107

=25°C) 80 W

TC=25°C unless otherwise noted

- 60

- 80

- 100

- 60

- 80

- 100

V V V

110

20.6

Ω≅

Symbol Parameter Test Condition Min. Max. Units

(sus) Collector -Em itter Sustaining Voltage

CEO

: TIP105 : TIP106 : TIP107

ICEO

Collector Cut-off Current

: TIP105 : TIP106 : TIP107

CBO

Collector Cut-off Current

: TIP105 : TIP106 : TIP107

IEBO hFE

(sat) Collector-Emitter Saturation Voltage IC = -3A, IB = -6mA

(on) Base-Emitter ON Voltage V

Emitter Cut-off Current VBE= -5V, IC = 0 -2 mA DC Current Gain V

Output Capacitance V

= -30mA, IB = 0 -60

-80

-100

= -30V, IB = 0

= -40V, IB = 0

= -50V, IB = 0

= -60V, IE = 0

= -80V, IE = 0

= -100V, IE = 0

= -4V, IC = -3A

= -4V, IC = -8A

1000

200

-50

20000

-2

= -8A, IB = -80mA

= -4V, IC = -8A -2.8 V

= -10V, IE = 0, f = 0.1MHz 300 pF

-2.5

V V V

µA µA µA

V V

Page 2

Typical Characteristics

TIP105/106/107

-5

IB = -1000 uA

IB = -900 uA

-4

-3

-2

[A], COLLECTOR CURRENT

-1

-0

-0 -1 -2 -3 -4 -5

IB = -800 uA

IB = -700 uA

VCE[V], COLLECTOR-EMITT E R VOL TA G E

Figure 1. Static Characteristic Figure 2. DC current Gain

-100k

-10k

-1k

(sat)[V], SATURATION VOLTAGE

(sat), V

-100

-0.1 -1 -10 -100

VBE(sat)

VCE(sat)

IC[A], COLLECTOR CURRENT

IB = -600 uA

IB = -500 uA

IB = -400 uA

IB = -300 uA

IB = -200 uA

IC = 500 I

10k

VCE = -4V

, DC CURRENT GAIN

100

-0.1 -1 -10

Ic[A], COLLECTOR CURRENT

10k

100

[pF], CAPACITANCE

-0.1 -1 -10 -100

f = 0.1 MHz

= 0

VCB[V], COLLECTOR-BASE VOLTAGE

Figure 3. Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

-100

-10

-1

-0.1

[mA], COLLECTOR CURRENT

-0.01

-0.1 -1 -10 -100

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 5. Safe Operating Area Figure 6. Power Derating

Figure 4. Collector Output Capacitance

1ms

100

5ms

TIP105

TIP106

TIP107

100

[W], POWER DISSIPATION

0 255075100125150175

TC[oC], CASE TEMPERATURE

Rev. A1, June 2001

Page 3

Package Demensions

±0.10

(1.70)

1.30

±0.20

9.20 (1.46)

9.90 (8.70)

ø3.60

TO-220

±0.20

±0.10

(45°)

(3.70)(3.00)

±0.10

2.80

±0.20

15.90

18.95MAX.

4.50

1.30

±0.20

+0.10 –0.05

TIP105/106/107

±0.20

13.08

(1.00)

1.27

2.54TYP

[2.54

±0.10

±0.20

]

10.00

±0.20

1.52

±0.10

0.80

±0.10

2.54TYP

±0.20

[2.54

±0.30

10.08

+0.10

0.50

–0.05

2.40

±0.20

]

Dimensions in Millimeters

Page 4

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

CEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™

CMOS™ EnSigna™ FACT™ FACT Quiet Series™

STAR*POWER is used under license

FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™

OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench

QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER SMART START™

STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™

UltraFET VCX™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

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Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

Preliminary First Production This datasheet contains preliminary data, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Obsolete Not In Production This datasheet contains specifications on a product

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Semiconductor reserves the right to make changes at any time without notice in order to improve design.

that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.