Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon PNP Darlington Power Transistors TIP105/106/107
DESCRIPTION
·With TO-220C package
·DARLINGTON
·High DC current gain
·Low collector saturation voltage
·Complement to type TIP100/101/102
APPLICATIONS
·For industrial use
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Tc=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current-DC -8 A
ICM Collector current-peak -15 A
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage Open collector -5 V
℃)
TIP105 -60
TIP106 -80
TIP107
TIP105 -60
TIP106 -80
TIP107
Open emitter
-100
Open base
-100
V
V
IB Base current-DC -1 A
PC Collector power dissipation
Tj Junction temperature 150 ℃
T
Storage temperature -65~150 ℃
stg
TC=25℃ 80
Ta=25℃
2
W
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon PNP Darlington Power Transistors TIP105/106/107
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
TIP105 -60
V
CEO(SUS)
V
CEsat-1
V
CEsat-2
VBE Base-emitter on voltage IC=-8A ; VCE=-4V -2.8 V
I
CBO
I
CEO
Collector-emitter
sustaining voltage
Collector-emitter saturation voltage IC=-3A ,IB=-6mA -2.0 V
Collector-emitter saturation voltage IC=-8A ,IB=-80mA -2.5 V
Collector cut-off current
Collector cut-off current
TIP106 -80
TIP107
TIP105 VCB=-60V, IE=0
TIP106 VCB=-80V, IE=0
TIP107 VCB=-100V, IE=0
TIP105 VCE=-30V, IB=0
TIP106 VCE=-40V, IB=0
TIP107 V
=-30mA, IB=0
I
C
=-50V, IB=0
CE
V
-100
-50 μA
-50 μA
I
Emitter cut-off current VEB=-5V; IC=0 -2 mA
EBO
h
DC current gain IC=-3A ; VCE=-4V 1000 20000
FE-1
h
DC current gain IC=-8A ; VCE=-4V 200
FE-2
Cob Output capacitance IE=0 ; VCB=-10V,f=0.1MHz 300 pF
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon PNP Darlington Power Transistors TIP105/106/107
PACKAGE OUTLINE
3
Fig.2 Outline dimensions
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