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COMPLEMENTARY SILICON POWER
■ SGS-THOMSONPREFERRED SALESTYPES
■ COMPLEMENTARYPNP - NPN DEVICES
■ INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
■ LINEARANDSWITCHINGINDUSTRIAL
EQUIPMENT
DESCRIPTION
The TIP100 and TIP102 are silicon epitaxial-base
NPN power transistors in monolithic Darlington
configuration mounted in TO-220 plastic
package, intented for use in power linear and
switchingapplications.
The complementary PNP types are TIP105 and
TIP107 respectively.
Also TIP106 is a PNP type.
TIP100/TIP102
TIP105/TIP106/TIP107
DARLINGTON TRANSISTORS
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
R1Typ. = 5 KΩ R2Typ. =150 Ω
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN TIP100 TIP102
PNP TIP105 TI P 106 TI P107
V
V
V
I
P
T
* For PNP types voltage and current values are negative.
June 1997
Collect or- B as e Voltage (IE=0) 60 80 100 V
CBO
Collector-Emitter Voltage (IB=0) 60 80 100 V
CEO
Emitter-Base Voltage ( IC=0) 5 V
EBO
Collect or Current 8 A
I
C
Collect or Peak Current 15 A
CM
Base Current 1 A
I
B
Tot al Dissipa t ion at T
tot
Storage Temperature -65 t o 150
stg
Max. O per ating Juncti on T emperatu re 150
T
j
T
case
amb
≤ 25 oC
≤ 25 oC
80
2
W
W
o
C
o
C
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Page 2
TIP100/TIP102/TIP105/TIP106/TIP107
THERMAL DATA
R
thj-case
R
thj-amb
Ther mal Resistance Junc t io n-c ase Max
Ther mal Resistance Junc t io n-am bien t Max
1.56
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwisespecified)
case
Symbol Parameter Test C ondition s Min. Typ. Max. Unit
I
CEO
I
CBO
I
EBO
V
CEO(sus)
V
CE(sat)
V
BE
h
FE
V
Collector C ut-off
Current (I
B
=0)
Collector C ut-off
Current (I
E
=0)
Emit ter Cut -o f f Current
=0)
(I
C
* Collector-Emitter
Sust aining Volt ag e
=0)
(I
B
* Collector-Emitter
Saturation Voltage
for T IP1 00/TI P105 V
for TIP106 V
for T IP1 02/TI P107 V
for T IP1 00/TI P105 V
for TIP106 V
for T IP1 02/TI P107 V
V
=-5V 8 mA
EB
I
=30mA
C
for T IP1 00/TI P105
fo r TIP106
fo r TIP102/TI P 107
IC=3A IB=6mA
=8A IB=80mA
I
C
=30V
CE
=40V
CE
=50V
CE
=60V
CE
=80V
CE
=100V
CE
60
80
100
* Ba se- Emitter V oltage IC=8A VCE=4V 2.8 V
* DC C ur rent Gain IC=3A VCE=4V
=8A VCE=4V
I
C
*ForwardVoltageof
F
I
=-IC=10A 2.8 V
F
1000
200 20000
50
50
50
50
50
50
2
2.5
Commutation Diode
=0)
(I
* For PNP types voltage and current values are negative.
B
µA
µA
µA
µA
µA
µA
V
V
V
V
V
Safe Operating Area
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Page 3
TIP100/TIP102/TIP105/TIP106/TIP107
TO-220 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
E
A
L4
D
F2
F1
G1
H2
G
F
P011C
C
D1
L2
Dia.
L5
L7
L6
L9
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TIP100/TIP102/TIP105/TIP106/TIP107
Informationfurnished is believed to beaccurate and reliable.However,SGS-THOMSON Microelectronics assumes no responsabilityfor the
consequencesof use ofsuch informationnor for anyinfringementof patents or other rightsof thirdparties which may results fromits use. No
license is grantedby implicationor otherwise underanypatent or patentrights ofSGS-THOMSONMicroelectronics.Specificationsmentioned
in thispublication are subject to change without notice.This publicationsupersedesand replacesall informationpreviously supplied.
SGS-THOMSON Microelectronicsproducts arenotauthorizedforuseas critical componentsinlifesupportdevicesor systemswithoutexpress
written approvalof SGS-THOMSONMicroelectonics.
1997SGS-THOMSONMicroelectronics -Printed in Italy- All RightsReserved
Australia- Brazil - Canada- China- France- Germany- Hong Kong -Italy - Japan- Korea -Malaysia -Malta - Morocco - The Netherlands-
Singapore - Spain- Sweden - Switzerland - Taiwan - Thailand - UnitedKingdom- U.S.A
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