Datasheet TIL 113 Datasheet

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4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler

May 2007

4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler

Features

■

High sensitivity to low input drive current Meets or exceeds all JEDEC Registered

■

Speciﬁcations

■

UL, C-UL approved VDE 0884 approval available as a test option

■

– add option V (e.g., 4N29VM)

Description

The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M and TIL113M have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.

Applications

■

Low power logic circuits Telecommunications equipment

■

Portable electronics Solid state relays

■

Interfacing coupling systems of different potentials and impedances

Packages Schematic

6

1

6

1

6

1

ANODE

CATHODE

N/C

1

2

3

BASE

6

COLLECTOR

5

4

EMITTER

(T

Absolute Maximum Ratings

= 25°C Unless otherwise speciﬁed.)

A

Symbol Parameter Value Units

TOTAL DEVICE

T

STG

T

OPR

T

SOL

P

D

EMITTER

I

F

V

R

I

(pk) Forward Current – Peak (300µs, 2% Duty Cycle) 3.0 A

F

P

D

DETECTOR

BV

CEO

BV

CBO

BV

ECO

P

D

I

C

Storage Temperature -40 to +150 °C Operating Temperature -40 to +100 °C Lead Solder Temperature (Wave) 260 for 10 sec °C Total Device Power Dissipation @ T

= 25°C 250 mW

A

Derate above 25°C 3.3 mW/°C

Continuous Forward Current 80 mA Reverse Voltage 3 V

LED Power Dissipation @ T

= 25°C 150 mW

A

Derate above 25°C 2.0 mW/°C

Collector-Emitter Breakdown Voltage 30 V Collector-Base Breakdown Voltage 30 V Emitter-Collector Breakdown Voltage 5 V Detector Power Dissipation @ T

= 25°C 150 mW

A

Derate above 25°C 2.0 mW/°C Continuous Collector Current 150 mA

4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler

(T

Electrical Characteristics

= 25°C Unless otherwise speciﬁed.)

A

Individual Component Characteristics

Symbol Parameter Test Conditions Device Min. Typ. Max. Unit

EMITTER

V

Input Forward Voltage* I

F

Reverse Leakage Current* V

I

R

C Capacitance* V

DETECTOR

BV

BV BV

I

CEO

Collector-Emitter Breakdown Voltage* I

CEO

Collector-Base Breakdown Voltage* I

CBO

Emitter-Collector Breakdown Voltage* I

ECO

Collector-Emitter Dark Current* V

= 10mA 4NXXM 1.2 1.5 V

F

H11B1M,

0.8 1.2 1.5

TIL113M

= 3.0V 4NXXM 0.001 100 µA

R

= 6.0V H11B1M,

V

R

0.001 10

TIL113M

= 0V, f = 1.0MHz All 150 pF

F

= 1.0mA, I

C

= 0 4NXXM,

B

30 60 V

TIL113M H11B1M 25 60

= 100µA, I

C

= 100µA, I

E

= 0 All 30 100 V

E

= 0 4NXXM 5.0 10 V

B

H11B1M,

710

TIL113M

= 10V, Base Open All 1 100 nA

CE

4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler

Transfer Characteristics

Symbol Parameter Test Conditions Device Min. Typ. Max. Unit

DC CHARACTERISTICS

I

C(CTR)

Collector Output Current*

V

CE(SAT)

Saturation Voltage*

AC CHARACTERISTICS

t

on

t

off

Tu r n-on Time I

Tu r n-off Time

BW

Bandwidth

(3, 4)

(2)

(1, 2)

= 10mA, V

I

F

= 0

I

B

I

= 1mA, V

F

= 10mA, V

I

F

I

= 8mA, I

F

= 1mA, I

I

F

= 200mA, I

F

= 10V, R

V

CC

= 10mA, V

I

F

= 100 Ω

R

L

I

= 200mA, I

F

= 10V, R

V

CC

= 10mA, V

I

F

= 100 Ω

R

L

= 10V,

CE

= 5V H11B1M 5 (500)

CE

= 1V TIL113M 30 (300)

CE

= 2.0mA 4NXXM 1.0 V

C

= 1mA H11B1M 1.0

C

= 50mA,

C

= 100 Ω

L

= 10V,

CE

= 50mA,

C

= 100 Ω

L

= 10V,

CE

4N32M,

50 (500) mA (%)

4N33M

4N29M,

10 (100)

4N30M

TIL113M 1.25

4NXXM,

5.0 µS

TIL113M

H11B1M 25

4N32M,

100 µS

4N33M,

TIL113M

4N29M,

40

4N30M

H11B1M 18

30 kHz

(T

Electrical Characteristics

= 25°C Unless otherwise speciﬁed.) (Continued)

A

Isolation Characteristics

Symbol Characteristic Test Conditions Device Min. Typ. Max. Units

(5)

I

1µA, Vrms, t = 1sec. All 7500 Vac(peak)

I-O

VDC 4N32M* 2500 V VDC 4N33M* 1500 V

= 500VDC All 10

I-O

V

= Ø, f = 1MHz All 0.8 pF

I-O

11

V

ISO

R

ISO

C

ISO

Input-Output Isolation Voltage

Isolation Resistance

(5)

Isolation Capacitance

Notes:

* Indicates JEDEC registered data.

1. The current transfer ratio(I

/I

) is the ratio of the detector collector current to the LED input current.

C

F

2. Pulse test: pulse width = 300µs, duty cycle ≤ 2.0% .

3. I

adjusted to I

F

4. The frequency at which I

= 2.0mA and I

C

is 3dB down from the 1kHz value.

C

= 0.7mA rms.

C

5. For this test, LED pins 1 and 2 are common, and phototransistor pins 4, 5 and 6 are common.

≤

Ω

4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler

Typical Performance Curves

4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler

Fig. 1 LED Forward Voltage vs. Forward Current

1.8

1.7

1.6

1.5

1.4

1.3

- FORWARD VOLTAGE (V)

F

1.2

V

1.1

1.0 110100

IF - LED FORWARD CURRENT (mA)

Fig. 3 Normalized CTR vs. Ambient Temperature

1.4

1.2

1.0

0.8

0.6

NORMALIZED CTR

0.4

0.2

-60 -40 -20 0 20 40 60 80 100

Normalized to

= 10 mA

I

F

= 25°C

T

A

TA - AMBIENT TEMPERATURE (°C)

TA = -55°C

TA = 25°C

TA = 100°C

IF = 5 mA

IF = 10 mA

IF = 20 mA

Fig. 2 Normalized CTR vs. Forward Current

1.6 VCE = 5.0V

= 25°C

T

A

1.4

1.2

1.0

0.8

0.6

NORMALIZED CTR

0.4

0.2

0.0

02468101214161820

IF - FORWARD CURRENT (mA)

1.0

)

0.9

IF = 20 mA

0.8

RBE(OPEN)

0.7

/ CTR

0.6

RBE

0.5

0.4

0.3

0.2

0.1

0.0

NORMALIZED CTR ( CTR

10 100 1000

Fig. 4 CTR vs. RBE (Unsaturated)

IF = 10 mA

IF = 5 mA

VCE= 5.0 V

RBE- BASE RESISTANCE (kΩ)

Normalized to

= 10 mA

I

F

Fig. 5 CTR vs. RBE (Saturated)

1.0

)

0.9

0.8

RBE(OPEN)

0.7

/ CTR

0.6

RBE

0.5

0.4

0.3

0.2

0.1

NORMALIZED CTR ( CTR

0.0 10 100 1000

RBE- BASE RESISTANCE (k Ω)

IF = 20 mA

IF = 10 mA

IF = 5 mA

VCE= 0.3 V

- COLLECTOR-EMITTER

CE (SAT)

V

Fig. 6 Collector-Emitter Saturation Voltage

100

TA = 25

10

1

0.1

SATURATION VOLTAGE (V)

0.01

0.001

IF = 5 mA

0.01 0.1 1 10

vs. Collector Current

˚C

IF = 2.5 mA

IF = 20 mA

IF = 10 mA

IC - COLLECTOR CURRENT (mA)

4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler

Typical Performance Curves

1000

100

10

1

SWITCHING SPEED - (µs)

0.1

1.4

1.3

)

1.2

1.1

off(open)

1.0

/ t

)

BE

0.9

off(R

0.8

- (t

0.7

off

0.6

0.5

0.4

0.3

NORMALIZED t

0.2

0.1

Fig. 7 Switching Speed vs. Load Resistor

IF = 10 mA

= 10 V

V

CC

= 25°C

T

A

T

off

0.1 1 10 100

R-LOAD RESISTOR (kΩ)

Fig. 9 Normalized t

10 100 1000 10000 100000

RBE- BASE RESISTANCE (k Ω)

T

f

T

on

T

r

vs. R

off

(Continued)

BE

V

10 V

CC =

= 2 mA

I

C

= 100 Ω

R

L

Fig. 8 Normalized ton vs. R

5.0

4.5

)

4.0

on(open)

/ t

3.5

)

BE

3.0

on(R

- (t

2.5

on

2.0

1.5

NORMALIZED t

1.0

0.5 10 100 1000 10000 100000

BE

V

I

C

R

L

RBE- BASE RESISTANCE (k Ω)

Fig. 10 Dark Current vs. Ambient Temperature

10000

VCE = 10 V

= 25°

C

T

A

1000

100

10

1

0.1

0.01

- COLLECTOR -EMITTER DARK CURRENT (nA)

CEO

I

0.001 020406080100

TA - AMBIENT TEMPERATURE

(°C)

10 V

CC =

= 2 mA

= 100 Ω

TEST CIRCUIT WAVE FORMS

= 10V

V

CC

INPUT PULSE

I

C

R

L

OUTPUT

I

Adjust

F to produce IC = 2 mA

10%

90%

OUTPUT PULSE

t

r

t

on

t

f

t

off

INPUT

I

F

R

BE

Figure 11. Switching Time Test Circuit and Waveforms

Package Dimensions

)

4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler

Through Hole

0.350 (8.89)

0.320 (8.13)

0.070 (1.77)

0.040 (1.02)

SEATING PLANE

0.200 (5.08)

0.115 (2.93)

0.100 (2.54)

0.015 (0.38)

0.020 (0.50)

0.016 (0.41)

0.4" Lead Spacing

0.350 (8.89)

0.320 (8.13)

0.014 (0.36)

0.010 (0.25)

0.100 (2.54)

PIN 1 ID

0.260 (6.60)

0.240 (6.10)

Pin 1 ID

0.260 (6.60)

0.240 (6.10)

0.320 (8.13)

15°

0.012 (0.30)

Surface Mount

0.350 (8.89)

0.320 (8.13)

PIN 1 ID

0.260 (6.60)

0.240 (6.10)

0.070 (1.77)

0.040 (1.02)

0.200 (5.08)

0.115 (2.93)

SEATING PLANE

0.025 (0.63)

0.020 (0.51)

0.020 (0.50)

0.016 (0.41)

0.014 (0.36)

0.010 (0.25)

0.100 [2.54]

0.012 (0.30)

0.008 (0.20)

Recommended Pay Layout for Surface Mount Leadform

0.070 (1.78

0.390 (9.90)

0.332 (8.43)

0.320 (8.13)

0.035 (0.88)

0.006 (0.16)

0.060 (1.52

0.070 (1.77)

0.040 (1.02)

0.200 (5.08)

0.115 (2.93)

SEATING PLANE

0.100 (2.54)

0.015 (0.38)

0.020 (0.50)

0.016 (0.41)

0.014 (0.36)

0.010 (0.25)

0.100 [2.54]

Note:

All dimensions are in inches (millimeters).

0.012 (0.30)

0.008 (0.21)

0.425 (10.80)

0.400 (10.16)

0.415 (10.54

0.100 (2.54

0.295 (7.49

0.030 (0.76

Ordering Information

Sufﬁx Example Option

No Sufﬁx 4N32M Standard Through Hole Device

S 4N32SM Surface Mount Lead Bend

SR2 4N32SR2M Surface Mount; Tape and reel

T 4N32TM 0.4" Lead Spacing V 4N32VM VDE 0884

TV 4N32TVM VDE 0884, 0.4" Lead Spacing

SV 4N32SVM VDE 0884, Surface Mount

SR2V 4N32SR2VM VDE 0884, Surface Mount, Tape & Reel

Marking Information

4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler

1

4N29

V X YY Q

43

Deﬁnitions

1Fairchild logo 2Device number

VDE mark (Note: Only appears on parts ordered with VDE

3

option – See order entry table) 4 One digit year code, e.g., ‘7’ 5Two digit work week ranging from ‘01’ to ‘53’ 6 Assembly package code

5

2

6

Tape Dimensions

4.5 ± 0.20

0.30 ± 0.05

21.0 ± 0.1

0.1 MAX

User Direction of Feed

Note:

All dimensions are in millimeters.

4.0 ± 0.1

10.1 ± 0.20

12.0 ± 0.1

2.0 ± 0.05

1.5 MIN

Ø

11.5 ± 1.0

9.1 ± 0.20

1.5 ± 0.1/-0

Ø

4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler

1.75 ± 0.10

24.0 ± 0.3

Reﬂow Soldering Proﬁle

300 280 260 240 220 200 180 160

°C

140 120 100

80 60 40 20

0

0 60 180120 270

260°C

>245°C = 42 Sec

Time above

183°C = 90 Sec

1.822°C/Sec Ramp up rate

33 Sec

360

Time (s)

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4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

provided in the labeling, can be reasonably expected to result in a significant injury of the user.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In Design This datasheet contains the design specifications for product

development. Specifications may change in any manner without notice.

Preliminary This datasheet contains preliminary data; supplementary data will be

First Production

published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Obsolete Not In Production This datasheet contains specifications on a product that has been

discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only.

Rev. I27

Datasheet TIL 113 Datasheet

Specifications and Main Features

Frequently Asked Questions

User Manual