Dual-In-Line and Clip Carrier [for
One-Time-Programmable (OTP) Devices]
and Ceramic Dual-In-Line Windowed
Package
.
T
A
RANGE
0°C to 75°CTICPAL22V10Z-25CJTLTICPAL22V10Z-25CNTTICPAL22V10Z-25CFN
–40°C to 85°CNATICPAL22V10Z-30INTTICPAL22V10Z-30IFN
These devices are covered by U.S. Patent 4,410,987.
EPIC is a trademark of Texas Instruments Incorporated.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
SRPS007C – D3323, SEPTEMBER 1989 – REVISED FEBRUARY 1992
description
The CMOS PLD devices feature variable product terms, flexible outputs, and virtually zero standby power. It
combines TI’s EPIC (Enhanced Processed Implanted CMOS) process with ultraviolet-light-erasable EPROM
technology. Each output has an output logic macrocell (OLM) configuration allowing for user definition of the
output type. This device provides reliable, low-power substitutes for numerous high-performance TTL PLDs with
gate complexities between 300 and 800 gates.
The TICPAL22V10Z has 12 dedicated inputs and 10 user-definable outputs. Individual outputs can be
programmed as registered or combinational and inverting or noninverting as shown in the OLM diagram. These
ten outputs are enabled through the use of individual product terms
The variable product-term distribution on this device removes rigid limitation to a maximum of eight product
terms per output. This technique allocates from 8 to 16 logical product terms to each output for an average of
12 product terms per output. The variable allocation of product terms allows for far more complex functions to
be implemented in this device than in previously available devices.
With features such as the programmable OLMs and the variable product-term distribution, the TICP AL22V10Z
offers quick design and development of custom LSI functions. Since each of the ten output pins may be
individually configured as inputs on either a temporary or permanent basis, functions requiring up to 21 inputs
and a single output or down to 12 inputs and 10 outputs can be implemented with this device.
Design complexity is enhanced by the addition of synchronous set and asynchronous reset product terms.
These functions are common to all registers. When the synchronous set product term is a logic 1, the output
registers are loaded with a logic 1 on the next low-to-high clock transition. When the asynchronous reset product
term is a logic 1, the output registers are loaded with a logic 0 independently of the clock. The output logic level
after set or reset will depend on the polarity selected during programming.
Output registers of this device can be preloaded to any desired state during testing, thus allowing for full logical
verification during product testing.
The TICP AL22V10Z has internal electrostatic discharge (ESD) protection circuits and has been classified with
a 2000-V ESD rating tested under MIL-STD-883C, Method 3015.6. However, care should be exercised in
handling these devices, as exposure to ESD may result in a degradation of the device parametric performance.
The floating-gate programmable cells allow the devices to be fully programmed and tested before assembly to
assure high field programming yield and functionality . They are then erased by ultraviolet light before packaging.
The TICPAL22V10Z-25C is characterized for operation from 0°C to 75°C. The TICPAL22V10Z-30I is
characterized for operation from –40°C to 85°C.
design security
The ’PAL22V10Z contains a programmable design security cell. Programming this cell will disable the read
verify and programming circuitry protecting the design from being copied. The security cell is usually
programmed after the design is finalized and released to production. A secured device will verify as if every
location in the device is programmed. Because programming is accomplished by storing an invisible charge
instead of opening a metal link, the ’22V10Z cannot be copied by visual inspection. Once a secured device is
fully erased, it can be reprogrammed to any desired configuration.
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
Page 3
EPIC CMOS PROGRAMMABLE ARRAY LOGIC CIRCUITS
functional block diagram (positive logic)
TICPAL22V10Z-25C, TICPAL22V10Z-30I
SRPS007C – D3323, SEPTEMBER 1989 – REVISED FEBRUARY 1992
CLK/I
C1
1S
R
Output
Logic
Macrocell
EN
EN
EN
EN
EN
EN
EN
EN
EN
EN
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
10
10
12
14
16
16
14
12
10
Set
Reset
8
8
1
10
10
&
44 x 132
22
11
I
10
22
denotes programmable cell inputs
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
3
Page 4
4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
logic diagram (positive logic)
1
CLK/I
First
Cell
Numbers
2
I
3
I
0481216202428
0
396
440
880
924
1452
1496
Increment
323640
MACRO
CELL
P = 5808
R = 5809
MACRO
CELL
P = 5810
R = 5811
MACRO
CELL
P = 5812
R = 5813
MACRO
CELL
Asynchronous Reset
(to all registers)
23
I/O/Q
22
I/O/Q
21
I/O/Q
20
I/O/Q
SRPS007C – D3323, SEPTEMBER 1989 – REVISED FEBRUARY 1992
TICPAL22V10Z-25C, TICPAL22V10Z-30I
EPIC CMOS PROGRAMMABLE ARRAY LOGIC CIRCUITS
2112
4
I
2156
2860
5
I
P = 5814
R = 5815
MACRO
CELL
P = 5816
R = 5817
19
I/O/Q
Page 5
2904
MACRO
CELL
3608
6
I
3652
P = 5818
R = 5819
MACRO
CELL
18
17
I/O/Q
I/O/Q
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
4268
EPIC CMOS PROGRAMMABLE ARRAY LOGIC CIRCUITS
7
I
4312
4840
8
I
4884
5324
9
I
5368
5720
10
I
5764
11
I
P = 5820
R = 5821
MACRO
CELL
P = 5822
R = 5823
MACRO
CELL
P = 5824
R = 5825
MACRO
CELL
P = 5826
R = 5827
16
I/O/Q
15
I/O/Q
14
I/O/Q
Synchronous Set
(to all registers)
13
I
SRPS007C – D3323, SEPTEMBER 1989 – REVISED FEBRUARY 1992
TICPAL22V10Z-25C, TICPAL22V10Z-30I
5
Inside each MACROCELL the (P) cell is the polarity cell and the (R) cell is the register cell.
Programmable Cell Number = First Cell Number + Increment
SRPS007C – D3323, SEPTEMBER 1989 – REVISED FEBRUARY 1992
output logic macrocell (OLM) description
A great amount of architectural flexibility is provided by the user-configurable macrocell output options. The
macrocell consists of a D-type flip-flop and two select multiplexers. The D-type flip-flop operates like a standard
TTL D-type flip-flop. The input data is latched on the low-to-high transition of the clock input. The Q and Q outputs
are made available to the output select multiplexer. The asynchronous reset and synchronous set controls are
available in all flip-flops.
The select multiplexers are controlled by programmable cells. The combination of these programmable cells
will determine which macrocell functions are implemented. It is this user control of the architectural structure
that provides the generic flexibility of this device.
output logic macrocell diagram
From Clock Buffer
Output Logic Macrocell
AR
SS
AR = asynchronous reset
SS = synchronous set
R
1D
C1
1S
MUX
1
1
G1
S1
S0
MUX
2
3
0
1
0
1
G
3
0
6
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
Page 7
EPIC CMOS PROGRAMMABLE ARRAY LOGIC CIRCUITS
output logic macrocell options (see Figure 1)
TICPAL22V10Z-25C, TICPAL22V10Z-30I
SRPS007C – D3323, SEPTEMBER 1989 – REVISED FEBRUARY 1992
00Register feedbackRegisteredActive low
01Register feedbackRegisteredActive high
10I/O feedbackCombinational Active low
11I/O feedbackCombinational Active high
0 = erased cell, 1 = programmed cell
S1 and S0 are select-function cells as shown in the output logic macrocell
diagram.
FEEDBACK AND OUTPUT CONFIGURATION
Figure 1. Resultant Macrocell Feedback and Output Logic After Programming
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: These ratings apply except for programming pins during a programming cycle or during a preload cycle.
recommended operating conditions
MINNOMMAXUNIT
V
V
V
I
I
t
t
t
t
T
OH
OL
w
su
su
h
Supply voltage4.7555.25V
CC
High-level input voltage2V
IH
Low-level input voltage0.8V
IL
High-level output current
Low-level output currentmA
Pulse durationClock low10ns
Setup time, turbo modeAsynchronous reset inactive20ns
Setup time, zero-power modeAsynchronous reset inactive30ns
Hold timeInput or feedback0ns
Operating free-air temperature075°C
SRPS007C – D3323, SEPTEMBER 1989 – REVISED FEBRUARY 1992
electrical characteristics over recommended operating free-air temperature range
PARAMETERTEST CONDITIONMIN TYP†MAXUNIT
V
OH
V
OL
I
OZH
I
OZL
I
IH
I
IL
I
O
I
CC
C
i
‡
§
I6
I/O10
VCC = 4.75 V,IOH = –3.2 mA for TTL44.8
VCC = 4.75 V,IOH = –4 mA for CMOS3.864.7
VCC = 4.75 V,IOL = 16 mA for TTL0.250.5
VCC = 4.75 V,IOL = 4 mA for CMOS0.070.4
VCC = 5.25 V,VO = 2.7 V0.0110µA
VCC = 5.25 V,VO = 0.5 V–0.01–10µA
VCC = 5.25 V,VI = 5.25 V0.0110µA
VCC = 5.25 V,VI = 0.5 V–0.01–10µA
VCC = 5.25 V,VO = 0.5 V–30–45–90mA
VCC = 5.25 V,
Outputs open,
VI = 2 V,f = 1 MHz
VI = 0 or VCC,
Zero-power mode
10100µA
switching characteristicsover recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted) (see Figure 3)
PARAMETER
¶
f
max
t
pd
t
pd
t
pd
t
en
t
dis
†
All typical values are at VCC = 5 V, TA = 25°C.
‡
Not more than one output should be shorted at a time, and the duration of the short circuit should not exceed one second. VO is set at 0.5 V to
avoid test problems caused by test equipment ground degradation.
§
Disabled outputs are tied to GND or VCC.
¶
f
max
Without feedback5066
With feedback31.255
Turbo mode1625
Zero-power mode2135
Turbo mode1830
Zero-power mode2340
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: These ratings apply except for programming pins during a programming cycle or during a preload cycle.
recommended operating conditions
MINNOMMAXUNIT
V
V
V
I
I
t
t
t
t
T
OH
OL
w
su
su
h
Supply voltage4.555.5V
CC
High-level input voltage2V
IH
Low-level input voltage0.8V
IL
High-level output current
Low-level output currentmA
Pulse durationClock low12ns
Setup time, turbo modeAsynchronous reset inactive25ns
Setup time, zero-power modeAsynchronous reset inactive35ns
Hold timeInput or feedback0ns
Operating free-air temperature–4085°C
SRPS007C – D3323, SEPTEMBER 1989 – REVISED FEBRUARY 1992
electrical characteristics over recommended operating free-air temperature range
PARAMETERTEST CONDITIONMIN TYP†MAXUNIT
V
OH
V
OL
I
OZH
I
OZL
I
IH
I
IL
I
O
I
CC
C
i
‡
§
I6
I/O10
VCC = 4.5 V,IOH = –3.2 mA for TTL44.8
VCC = 4.5 V,IOH = –4 mA for CMOS3.864.7
VCC = 4.5 V,IOL = 16 mA for TTL0.250.5
VCC = 4.5 V,IOL = 4 mA for CMOS0.070.4
VCC = 5.5 V,VO = 2.7 V0.0110µA
VCC = 5.5 V,VO = 0.5 V–0.01–10µA
VCC = 5.5 V,VI = 5.5 V0.0110µA
VCC = 5.5 V,VI = 0.5 V–0.01–10µA
VCC = 5.5 V,VO = 0.5 V–30–45–90mA
VCC = 5.5 V,
Outputs open,
VI = 2 V,f = 1 MHz
VI = 0 or VCC,
Zero-power mode
10100µA
switching characteristicsover recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted) (see Figure 3)
PARAMETER
¶
f
max
t
pd
t
pd
t
pd
t
en
t
dis
†
All typical values are at VCC = 5 V, TA = 25°C.
‡
Not more than one output should be shorted at a time, and the duration of the short circuit should not exceed one second. VO is set at 0.5 V to
avoid test problems caused by test equipment ground degradation.
§
Disabled outputs are tied to GND or VCC.
¶
f
max
Without feedback41.666
With feedback23.855
Turbo mode1630
Zero-power mode2140
Turbo mode1835
Zero-power mode2345
SRPS007C – D3323, SEPTEMBER 1989 – REVISED FEBRUARY 1992
preload procedure for registered outputs (see Notes 2 and 3)
The output registers can be preloaded to any desired state during device testing. This permits any state to be
tested without having to setup through the entire state-machine sequence. Each register is preloaded
individually by following the steps given below. The output level depends on the polarity selected during
programming.
Step 1. With VCC at 5 V and pin 1 at VIL, raise pin 8 to V
Step 2. Apply either V
or VIH to the output corresponding to the register to be preloaded.
IL
IHH
.
Step 3. Pulse pin 1, clocking in preload data.
Step 4. Remove output voltage, then lower pin 8 to V
. Preload can be verified by observing the voltage level
IL
at the output pin.
V
V
V
V
V
V
IHH
IL
IH
IL
OH
OL
Pin 8
t
t
d
CLK/I
Registered I/OInputOutput
su
t
w
t
d
V
IH
V
IL
Figure 2. Preload Waveforms
NOTES: 2. Pin numbers shown are for the JTL and NT packages only. If chip-carrier socket adapter is not used, pin numbers must be changed
accordingly.
3.
t
= t
d
=
tw = 100 ns to 1000 ns. V
su
= 10.25 V to 10.75 V.
IHH
programming information
Texas Instruments programmable logic devices can be programmed using widely available software and
inexpensive device programmers.
Complete programming specifications, algorithms, and the latest information on hardware, software, and
firmware are available upon request. Information on programmers capable of programming T exas Instruments
programmable logic is also available, upon request, from the nearest TI field sales office, local authorized TI
distributor, or by calling Texas Instruments at (214) 997-5666.
12
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
Page 13
TICPAL22V10Z-25C, TICPAL22V10Z-30I
EPIC CMOS PROGRAMMABLE ARRAY LOGIC CIRCUITS
SRPS007C – D3323, SEPTEMBER 1989 – REVISED FEBRUARY 1992
PARAMETER MEASUREMENT INFORMATION
5 V
(see Note D)
S1
300 Ω
From Output
Under Test
Test
Point
CLK
t
Data
Input
Input
t
pd
In-Phase
Output
t
pd
Out-of-Phase
Output
(see Note D)
PROPAGATION DELAY TIMES
1.5 V
su
1.5 V
VOLTAGE WAVEFORMS
SETUP AND HOLD TIMES
1.5 V1.5 V
1.5 V
1.5 V1.5 V
VOLTAGE WAVEFORMS
(see Note A)
t
h
1.5 V
t
pd
1.5 V
t
pd
V
V
V
V
C
L
LOAD CIRCUIT FOR
3-STATE OUTPUTS
3 V
0
3 V
0
(see Note B)
3 V
0
OH
OL
OH
OL
390 Ω
High-Level
Pulse
Low-Level
Pulse
Output
Control
(low-level
enabling)
Waveform 1
S1 Closed
(see Note C)
Waveform 2
S1 Open
(see Note C)
1.5 V1.5 V
t
w
1.5 V1.5 V
VOLTAGE WAVEFORMS
PULSE DURATIONS
1.5 V1.5 V
t
en
t
en
t
1.5 V
1.5 V
t
dis
dis
3 V
0
3 V
0
(see Note B)
3 V
0
(see Note B)
≈ 3.3 V
VOL + 0.5 V
V
OL
V
OH
VOH – 0.5 V
≈ 0 V
ENABLE AND DISABLE TIMES, 3-STATE OUTPUTS
NOTES: A. CL includes probe and jig capacitance and is 50 pF for tpd and ten, 5 pF for t
B. All input pulses have the following characteristics: PRR ≤ 1 MHz, Zo = 50 Ω, tr = tf = 2 ns, duty cycle = 50%.
C. Waveform 1 is for an output with internal conditions such that the output is low except when disabled by the output control. Waveform 2
is for an output with internal conditions such that the output is high except when disabled by the output control.
D. When measuring propagation delay times of 3-state outputs, switch S1 is closed.
E. Equivalent loads may be used for testing.
SRPS007C – D3323, SEPTEMBER 1989 – REVISED FEBRUARY 1992
special design features
True CMOS Outputs: Each TICPAL22V10Z output is designed with a P-channel pull-up transistor and an
N-channel pull-down transistor, a true CMOS output with rail-to-rail output switching. This provides direct
interface to CMOS logic, memory, or ASIC devices without the need for a pull-up resistor. The CMOS output
has 16-mA drive capability , which makes the TICPAL22V10Z an ideal substitute for bipolar PLDs. The electrical
characteristics of this device show the output under both CMOS and TTL conditions.
Simultaneous Switching: High-performance CMOS devices often have output glitches on nonswitched
outputs when a large number of outputs are switched simultaneously. This glitch is commonly referred to as
(low-level output voltage). Ground bounce is
”ground bounce” and is most noticeable on outputs held at V
caused by the voltage drop across the inductance in the package lead when current is switched (dv α I x di/dt).
One solution is to restrict the number of outputs that can switch simultaneously . Another solution is to change
the device pinout such that the ground is located on a low-inductance package pin. TI opted for a third option
in order to maintain pinout compatibility and eliminate functional constraints. This option controls the output
transistor turn-on characteristics and puts a limit on the instantaneous current available to the load, much like
the I
resistor in a TTL circuit.
OS
Wake-Up Features: The TICP AL22V10Z employs input signal transition detection techniques to power up the
device from the standby-power mode. The transition detector monitors all inputs, I/Os, and feedback paths.
Whenever a transition is sensed, the detector activates the power-up mode. The device will remain in the
power-up mode until the detector senses that the inputs and outputs have been static for about 40 ns; thereafter,
the device returns to the standby mode.
OL
T urbo Mode or Zero-Power Mode: When the turbo cell is programmed, the device will be set to the power-up
mode. Therefore, the delay associated with its transition detection and power up will be eliminated. This is how
the faster propagation delays and shorter setup times are obtained in the turbo mode. The turbo mode and the
associated speed increase can be effectively simulated with the turbo cell erased, if a series of adjacent input,
I/O, or feedback edges occur with an interval of about 25 ns or less between these adjacent edges. Under these
conditions, the TICPAL22V10Z will never have the opportunity to power down due to the frequency of the
adjacent edges.
Power Up: The TICP AL22V10Z device configuration bits (power mode, and macrocell configuration) are read
at the first input transition after a monotonic power up. When completed, the TICP AL22V10Z is in its designed
configuration. The use of an initializing device reset is necessary in applications where registered feedback is
used to ensure the TICPAL22V10Z is in a known state at the beginning of system operation.
Power Dissipation: Power dissipation of the TICP AL22V10Z is defined by three contributing factors, and the
total power dissipation is the sum of all three.
Standby Power: The product of V
and the standby ICC. The standby current is the reverse current
CC
through the diodes that are reversed biased. This current is very small, and for circuits that remain in static
condition for a long time, this low amount of current can become a major performance advantage.
Dynamic Power: The product of VCC and the dynamic current. This dynamic current flows through the
device only when the transistors are switching from one logic level to the other. The total dynamic current
for the TICPAL22V10Z is dependent upon the users’ configuration of the device and the operating
frequency. Output loading can be a source of additional power dissipation.
Interface Power: The product of I
(interface) and VCC. The total interface power is dependent on the
CC
number of inputs at the TTL VOH level. The interface power can be eliminated by the addition of a pull-up
resistor.
14
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
Page 15
TICPAL22V10Z-25C, TICPAL22V10Z-30I
EPIC CMOS PROGRAMMABLE ARRAY LOGIC CIRCUITS
SRPS007C – D3323, SEPTEMBER 1989 – REVISED FEBRUARY 1992
Even though power dissipation is a function of the user’s device configuration and the operating frequency, the
TICPAL22V10Z is a lower powered solution than either the quarter-powered or half-powered bipolar devices.
The virtually zero standby power feature makes the TICPAL22V10Z the device of choice for low-duty-cycle
applications.
programming and erasability
Programming of the TICPAL22V10Z is achieved through floating-gate avalanche injection techniques. The
charge trapped on the floating gate remains after power has been removed, allowing for the nonvolatility of the
programmed data. The charge can be removed by exposure to light with wavelengths of less than 400 nm
(4000 Å). The recommended erasure wavelength is 253.7 nm (2537 Å), with erasure time of 60 to 90 minutes,
using a light source with a power rating of 12000 µW/cm
The TICP AL22V10Z is designed for programming endurance of 1000 write/erase cycles with a data retention
of ten years. T o guarantee maximum data retention, the window on the device should be covered by an opaque
label. The fluorescent light in a room can erase a unit in three years or, in the case of a direct sunlight, erasure
can be complete in one week.
SRPS007C – D3323, SEPTEMBER 1989 – REVISED FEBRUARY 1992
TYPICAL CHARACTERISTICS
OUTPUT CURRENT
vs
OUTPUT VOLTAGE
400
VCC = 5 V
TA = 25°C
200
I
100
70
40
–I
20
10
7
– Output Current – mA
O
I
4
2
01235
OH
VO – Output Voltage – V
OL
4
Figure 4
1.4
= 25 °C
1.3
A
T
1.2
= 5 V,V
CC
V
1.1
1
0.9
0.8
CL = 50 pF
f
Duty Cycle = 50%
0.7
Normalized Supply Current at
–50–250
NORMALIZED SUPPLY CURRENT
vs
FREE-AIR TEMPERATURE
(10-BIT COUNTER)
= 23.8 MHz
clock
255075
TA – Free-Air Temperature – °C
Figure 5
VCC = 4.5 V
VCC = 4.75 V
VCC = 5 V
VCC = 5.25 V
VCC = 5.5 V
100
CLOCK FREQUENCY
100
VCC = 5 V
TA = 25°C
CL = 50 pF
Duty cycle = 50%
80
60
40
– Supply Current – mA
CC
I
20
Turbo Bit off
0
1001 k10 k100 k
f
clock
SUPPLY CURRENT
vs
(10-BIT COUNTER)
Turbo Bit on
1 M10 M
– Clock Frequency – Hz
Figure 6
100 M
NORMALIZED PROPAGATION DELAY TIME
1.15
= 5 V
CC
1.05
0.95
Normalized Propagation Delay Time at
CLK to Q and Turbo Mode
1.1
1
TA = 25 °C
CL = 50 pF
R1 = 300 Ω
R2 = 390 Ω
0.9
4.55
vs
SUPPLY VOLTAGE
Zero-Power Mode
4.75
VCC – Supply Voltage – V
Figure 7
5.25
5.5
16
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Page 17
TICPAL22V10Z-25C, TICPAL22V10Z-30I
EPIC CMOS PROGRAMMABLE ARRAY LOGIC CIRCUITS
SRPS007C – D3323, SEPTEMBER 1989 – REVISED FEBRUARY 1992
TYPICAL CHARACTERISTICS
CHANGE IN
NORMALIZED PROPAGATION DELAY TIME
vs
FREE-AIR TEMPERATURE
1.2
VCC = 5 V
CL = 50 pF
= 25 °C
A
T
R1 = 300 Ω
R2 = 390 Ω
1.1
30
25
20
PROPAGATION DELAY TIME
vs
LOAD CAPACITANCE
VCC = 5 V
TA = 25 °C
R1 = 300 Ω
R2 = 390 Ω
1
0.9
Normalized Propagation Delay Time at
0.8
–50–250
= CLK to Q
= Zero-Power Mode
= Turbo Mode
255075
TA – Free-Air Temperature –°C
Figure 8
PROPAGATION DELAY TIME
NUMBER OF OUTOUTS SWITCHING
1.5
VCC = 5 V
TA = 25 °C
CL = 50 pF
R1 = 300 Ω
R2 = 390 Ω
Registered Macrocell
1
100
CHANGE IN
vs
15
10
5
Change in Propagation Delay Time – ns
0
0100 200300400500
CL – Load Capacitance – pF
Figure 9
t
PHL
t
PLH
600700 800
0.5
Change in Propagation Delay Time – ns
0
1234567
Number of Outputs Switching
Figure 10
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
t
PHL
t
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TI Worldwide
Sales Offices
ALABAMA: Huntsville: 4960 Corporate Drive,
Suite 150, Huntsville, AL 35805, (205) 837-7530.
ARIZONA: Phoenix: 8825 N. 23rd Avenue, Suite 100,
Phoenix, AZ 85021, (602) 995-1007.
CALIFORNIA: Irvine: 1920 Main Street, Suite 900,
Irvine, CA 92714, (714) 660-1200;
San Diego: 5625 Ruffin Road, Suite 100,
San Diego, CA 92123, (619) 278-9600;
Santa Clara: 5353 Betsy Ross Drive,
Santa Clara, CA 95054, (408) 980-9000;
Woodland Hills: 21550 Oxnard Street, Suite 700,
Woodland Hills, CA 91367, (818) 704-8100.
COLORADO: Aurora: 1400 S. Potomac Street, Suite 101,
Aurora, CO 80012, (303) 368-8000.
CONNECTICUT: W allingford: 9 Barnes Industrial Park
So., Wallingford, CT 06492, (203) 269-0074.
FLORIDA: Altamonte Springs: 370 S. North Lake
Boulevard, Suite 1008, Altamonte Springs, FL 32701,
(407) 260-2116;
Fort Lauderdale: 2950 N.W. 62nd Street,
Suite 100, Fort Lauderdale, FL 33309,
(305) 973-8502; Tampa: 4803 George Road, Suite 390,
Tampa, FL 33634-6234, (813) 885-7588.
GEORGIA: Norcross: 5515 Spalding Drive,
Norcross, GA 30092-2560, (404) 662-7967.
ILLINOIS: Arlington Heights: 515 West Algonquin,
Arlington Heights, IL 60005, (708) 640-6925.
INDIANA: Carmel: 550 Congressional Drive, Suite 100,
Carmel, IN 46032, (317) 573-6400;
Fort Wayne: 103 Airport North Office Park,
Fort Wayne, IN 46825, (219) 489-4697.
KANSAS: Overland Park: 7300 College Boulevard,
Lighton Plaza, Suite 150, Overland Park, KS 66210,
(913) 451-4511.
MARYLAND: Columbia: 8815 Centre Park Drive,
Suite 100, Columbia, MD 21045, (410) 964-2003.
MASSACHUSETTS: Waltham: Bay Colony Corporate
Center 950 Winter Street, Suite 2800, Waltham, MA 02154,
(617) 895-9100.
MICHIGAN: Farmington Hills: 33737 W. 12 Mile Road,
Farmington Hills, MI 48018, (313) 553-1581.
MINNESOTA: Eden Prairie: 11000 W. 78th Street,
Suite 100, Eden Prairie, MN 55344, (612) 828-9300.
MISSOURI: St. Louis: 12412 Powerscourt Drive,
Suite 125, St. Louis, MO 63131, (314) 821-8400.
NEW JERSEY: Iselin: Metropolitan Corporate Plaza, 485
Bldg E. U.S. 1 South, Iselin, NJ 08830, (908) 750-1050.
NEW MEXICO: Albuquerque: 2709 J. Pan American
Freeway, N.E., Albuquerque, NM 87101, (505) 345-2555.
NEW YORK: East Syracuse: 6365 Collamer Drive,
East Syracuse, NY 13057, (315) 463-9291;
Fishkill: 300 Westage Business Center, Suite 140,
Fishkill, NY 12524, (914) 897-2900;
Melville: 48 South Service Road, Suite 100, Melville, NY
11747, (516) 454-6601;
Pittsford: 2851 Clover Street, Pittsford, NY 14534,
(716) 385-6770.
NORTH CAROLINA: Charlotte: 8 Woodlawn Green,
Suite 100, Charlotte, NC 28217, (704) 527-0930;
Raleigh: 2809 Highwoods Boulevard, Suite 100,
Raleigh, NC 27625, (919) 876-2725.
UTAH: Salt Lake City: 2180 South 1300 East, Sute 335,
Salt Lake City, UT 54106, (801) 466-8972.
WISCONSIN: Waukesha: 20825 Swenson Drive,
Suite 900, Waukesha WI 53186, (414) 798-1001.
CANADA: Nepean: 301 Moodie Drive, Suite 102, Mallom
Center, Nepean, Ontario, Canada K2H 9C4,
(613) 726-1970;
Richmond Hill: 280 Centre Street East, Richmond Hill,
Ontario, Canada L4C 1B1, (416) 884-9181;
St. Laurent: 9460 Trans Canada Highway, St. Laurent,
Quebec, Canada H4S 1R7, (514) 335-8392.
AUSTRALIA (& NEW ZEALAND): T exas Instruments
Australia Ltd., 6-10 Talavera Road, North Ryde (Sydney),
New South Wales, Australia 2113, 2-878-9000; 14th Floor,
380 Street, Kilda Road, Melbourne, Victoria, Australia 3004,
3-696-1211; 171 Philip Highway, Elizabeth, South Australia
5112, 8 255-2066.
ITALY: Texas Instruments Italia S.p.A., Centro Direzionale
Colleoni, Palazzo Perseo-Via Paracelso 12, 20041 Agrate
Brianza (Mi), Italy, (039) 63221; Via Castello della Magliana,
38, 00148 Roma, Italy (06) 6572651; Via Amendola, 17,
40100 Bologna, Italy (051) 554004.
JAPAN: Texas Instruments Japan Ltd., Aoyama Fuji
Building 3-6-12 Kita-Aoyama Minato-ku, Tokyo, Japan 107,
03-498-2111; MS Shibaura Building 9F, 4-13-23 Shibaura,
Minato-ku, Tokyo, Japan 108, 03-769-8700; Nissho-iwai
Building 5F, 2-5-8 Imabashi, Chuou-ku, Osaka, Japan 541,
06-204-1881; Dai-ni Toyota Building Nishi-kan 7F, 4-10-27
Meieki, Nakamura-ku, Nagoya, Japan 450, 052-583-8691;
Kanazawa Oyama-cho Daiichi Seimei Building 6F, 3-10
Oyama-cho, Kanazawa, Ishikawa, Japan 920,
0762-23-5471; Matsumoto Showa Building 6F, 1-2-11
Fukashi, Matsumoto, Nagano, Japan 390, 0263-33-1060;
Daiichi Olympic Tachikawa Building 6F, 1-25-12,
Akebono-cho, Tachikawa, Tokyo, Japan 190,
0425-27-6760; Yokohama Business Park East Tower 10F,
134 Goudo-cho Hodogaya-ku, Yokohama-shi, Kanagawa,
Japan 240, 045-338-1220; Nihon Seimei Kyoto Yasaka
Building 5F, 843-2, Higashi Shiokohji-cho, Higashi-iru,
Nishinotoh-in, Shiokohji-dori, Shimogyo-ku, Kyoto, Japan
600, 075-341-7713; Sumitomo Seimei Kumagaya Building
8F, 2-44 Yayoi, Kumagaya, Saitama, Japan 360,
0485-22-2440; 2597-1, Aza Harudai, Oaza Yasaka, Kitsuki,
Oita, Japan 873, 09786-3-3211.
MALAYSIA: Texas Instruments Malaysia, Sdn. Bhd., Asia
Pacific, Lot 36.1 #Box 93, Menara Maybank, 100 Jalan Tun
Perak, 50050 Kuala Llumpur, Malaysia, 2306001.
MEXICO: Texas Instruments de Mexico S.A., de C.V.,
Alfonso Reyes 115, Col. Hipodromo Condesa, Mexico, D.F.,
Mexico 06170, 5-515-6081.
NORWAY: Texas Instruments Norge A/S, P.B. 106, Refstad
(Sinsenveien 53), 0513 Oslo 5, Norway, (02) 155 090.
T exas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue
any product or service without notice, and advise customers to obtain the latest version of relevant information
to verify, before placing orders, that information being relied on is current and complete. All products are sold
subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those
pertaining to warranty, patent infringement, and limitation of liability.
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent
TI deems necessary to support this warranty . Specific testing of all parameters of each device is not necessarily
performed, except those mandated by government requirements.
CERTAIN APPLICA TIONS USING SEMICONDUCT OR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL
APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR
WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER
CRITICAL APPLICA TIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERST OOD TO
BE FULLY AT THE CUSTOMER’S RISK.
In order to minimize risks associated with the customer’s applications, adequate design and operating
safeguards must be provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other
intellectual property right of TI covering or relating to any combination, machine, or process in which such
semiconductor products or services might be or are used. TI’s publication of information regarding any third
party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.
Copyright 1998, Texas Instruments Incorporated
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