Datasheet TICP107M, TICP107D Datasheet (Power Innovations)

TICP107 SERIES

SILICON CONTROLLED RECTIFIERS

JANUARY 1999 - REVISED JUNE 2000Copyright © 2000, Power Innovations Limited, UK

● 1 A Continuous On-State Current

● 15 A Surge-Current

● Glass Passivated Wafer

● 400 V to 600 V Off-State Voltage

● I

50 µA min, 200 µA max

GT

● di/dt 100A/µs

● Package Options

PACKAGE PACKING PART # SUFFIX

LP Bulk (None)

LP with fomed leads Tape and Reel R

G

A

K

G

A

LP PACKAGE

(TOP VIEW)

1
2
3

LP PACKAGE

WITH FORMED LEADS

(TOP VIEW)

1
2
3

K

absolute maximum ratings over operating junction temperature (unless otherwise noted)

RATING SYMBOL VALUE UNIT

Repetitive peak off-state voltage (see Note 1)

Repetitive peak reverse voltage

Continuous on-state current at (or below) 25°C ambient temperature (see Note 2) I

Surge on-state current at (or below) 25°C ambient temperature (see Note 3) I

Critical rate of rise of on-state current at 110°C (see Note 4) di/dt 100 A/µs

Peak positive gate current (pulse width

Junction temperature range T

Storage temperature range T

Lead temperature 3.2 mm from case for 10 seconds T

NOTES: 1. These values apply when the gate-cathode resistance R

2. These values apply for continuous dc operation with resistive load.

3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.

4. Rate of rise of on-state current after triggering with I

≤ 300 µs) I

= 1 kΩ .

GK

= 10mA, diG/dt = 1A/µs.

G

TICP107D

TICP107M

TICP107D

TICP107M

V

DRM

V

RRM

T(RMS)

TSM

GM

J

stg

L

400

600

400

600

1 A

15 A

0.2 A

-40 to +110 °C

-40 to +125 °C

230 °C

MDC1AA

MDC1AB

V

V

PRODUCT INFORMATION

Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.

1

TICP107 SERIES
SILICON CONTROLLED RECTIFIERS

JANUARY 1999 - REVISED JUNE 2000

electrical characteristics at 25°C ambient temperature (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

I

I

Repetitive peak

DRM

off-state current

Repetitive peak

RRM

reverse current

Gate trigger current VAA = 12 V R

I

GT

Gate trigger voltage VAA = 12 V R

V

GT

Holding current VAA = 12 V Initiating IT = 10 mA 2 mA

I

H

On-state voltage IT= 2 A (see Note 5) 1.4 V

V

T

NOTE 5: This parameter must be measured using pulse techniques, t

the current carrying contacts, are located within 3.2 mm from the device body.

= rated V

V

D

= rated V

V

R

DRM

RRM

R

= 1 kΩ 20 µA

GK

I

= 0 200 µA

G

= 100 Ω t

L

= 100 Ω t

L

= 1 ms, duty cycle ≤ 2 %. Voltage sensing-contacts, separate from

p

≥ 20 µs 50 200 µA

p(g)

≥ 20 µs 0.4 1 V

p(g)

PRODUCT INFORMATION

2

TICP107 SERIES

NOTE A: Lead dimensions are not controlled in this area.

SILICON CONTROLLED RECTIFIERS

JANUARY 1999 - REVISED JUNE 2000

MECHANICAL DATA

LP003 (TO-92)
3-pin cylindical plastic package

This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.

LP003 Falls Within JEDEC

LP003 (TO-92)

LP003 (TO-92)

5,21

5,21

4,44

4,44

3,43 MIN.

3,43 MIN.

4,19

4,19
3,17

3,17

LP003 Falls Within JEDEC

TO-226AA Dimensions

TO-226AA Dimensions

Seating Plane

Seating Plane

(see Note A)

(see Note A)

2,67

2,67
2,03

2,03

1,27

1,27

0,56

0,56
0,40

0,40

1,40

1,40
1,14

1,14

2,67

2,67
2,41

2,41

2,67

2,67
2,03

2,03

5,34

5,34
4,32

4,32

12,7 MIN.

12,7 MIN.

1

1

3

3

0,41

0,41
0,35

2

2

0,35

NOTE A: Lead dimensions are not controlled in this area.

PRODUCT INFORMATION

ALL LINEAR DIMENSIONS IN MILLIMETERS

ALL LINEAR DIMENSIONS IN MILLIMETERS

MDXXAX

MDXXAX

3

TICP107 SERIES
SILICON CONTROLLED RECTIFIERS

JANUARY 1999 - REVISED JUNE 2000

MECHANICAL DATA
LP003 (TO-92)

3-pin cylindical plastic package

This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.

LP003 (TO-92) - Formed Leads Version

5,21
4,44

3,43 MIN.

2,67
2,03

0,56
0,40

1

LP003 Falls Within JEDEC

TO-226AA Dimensions

4,19
3,17

2,67
2,03

5,34
4,32

4,00 MAX.

2 3

2,90
2,40

ALL LINEAR DIMENSIONS IN MILLIMETERS

PRODUCT INFORMATION

4

2,90
2,40

0,41
0,35

MDXXAR

LPR
tape dimensions

LP Package (TO-92) Tape (Formed Lead Version)

5,21
4,44

3,43 MIN.

2,67
2,03

TICP107 SERIES

SILICON CONTROLLED RECTIFIERS

JANUARY 1999 - REVISED JUNE 2000

MECHANICAL DATA

4,19
3,17

2,67
2,03

5,34
4,32

32,00
23,00

27,68
17,66

16,50
15,50

11,00

8,50

2,50 MIN.

2,90
2,40

6,75
5,95

4,00 MAX.

0,56
0,40

13,00
12,40

13,70
11,70

2,90
2,40

0,41
0,35

9,75
8,50

19,00

5,50

ø

0,50
0,00

19,00
17,50

4,30
3,70

ALL LINEAR DIMENSIONS IN MILLIMETERS

PRODUCT INFORMATION

MDXXAS

5

TICP107 SERIES
SILICON CONTROLLED RECTIFIERS

JANUARY 1999 - REVISED JUNE 2000

IMPORTANT NOTICE

Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.

PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.

PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.

PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.

Copyright © 2000, Power Innovations Limited

PRODUCT INFORMATION

6