Datasheet TIC256S, TIC256M, TIC256N, TIC256D Datasheet (Power Innovations)

TIC256 SERIES

SILICON TRIACS

JULY 1991 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK

● High Current Triacs

● 20 A RMS

● Glass Passivated Wafer

● 400 V to 800 V Off-State Voltage

MT1
MT2

● 150 A Peak Current

● Max I

of 50 mA (Quadrants 1 - 3)

GT

G

Pin 2 is in electrical contact with the mounting base.

absolute maximum ratings over operating case temperature (unless otherwise noted)

RATING SYMBOL VALUE UNIT

TIC256D

Repetitive peak off-state voltage (see Note 1)

Full-cycle RMS on-state current at (or below) 60°C case temperature (see Note 2) I
Peak on-state surge current full-sine-wave (see Note 3) I
Peak gate current I
Operating case temperature range T
Storage temperature range T
Lead temperature 1.6 mm from case for 10 seconds T

NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.

2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 60°C derate linearly to 110°C case temperature at
the rate of 500 mA/°C.

3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.

TIC256M
TIC256S
TIC256N

TO-220 PACKAGE

(TOP VIEW)

1
2
3

V

DRM

T(RMS)

TSM

GM

C

stg

L

400
600
700
800

20 A

150 A

±1 A

-40 to +110 °C

-40 to +125 °C
230 °C

MDC2ACA

V

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER TEST CONDITIONS

I

DRM

I

GTM

V

V
I

H

GTM

TM

Repetitive peak
off-state current

Peak gate trigger
current

Peak gate trigger
voltage

Peak on-state voltage ITM = ±28.2 A IG = 50 mA (see Note 4) ±1.4 ±1.7 V
Holding current

= Rated V

V

D

V

supply

V

supply

V

supply

V

supply

V

supply

V

supply

V

supply

V

supply

V

supply

V

supply

DRM

= +12 V†
= +12 V†
= -12 V†
= -12 V†
= +12 V†
= +12 V†
= -12 V†
= -12 V†

= +12 V†
= -12 V†

IG = 0 TC = 110°C ±2 mA
R

= 10 Ω

L

RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
R

= 10 Ω

L

RL = 10 Ω
RL = 10 Ω
RL = 10 Ω

I

= 0

G

= 0

I

G

t

p(g)

t

p(g)

t

p(g)

t

p(g)

t

p(g)

t

p(g)

t

p(g)

t

p(g)

Init’ I
Init’ I

> 20 µs
> 20 µs
> 20 µs
> 20 µs
> 20 µs
> 20 µs
> 20 µs
> 20 µs

= 100 mA

TM

= -100 mA

TM

† All voltages are with respect to Main Terminal 1.
NOTE 4: This parameter must be measured using pulse techniques, t

the current carrying contacts are located within 3.2 mm from the device body.

= ≤ 1 ms, duty cycle ≤ 2 %. Voltage-sensing contacts separate from

p

PRODUCT INFORMATION

Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.

MIN TYP MAX

7

50

-15

-50

-16

-50

28

0.7

-0.7

-0.8

0.8

2

-2

-2
2

6

-1340-40

UNIT

mA

V

mA

1

TIC256 SERIES

I

- Gate Trigger Current - mA

V

- Gate Trigger Voltage - V

SILICON TRIACS

JULY 1991 - REVISED MARCH 1997

electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)

MIN TYP MAX

20

-20

±1 V/µs

I

L

dv/dt

dv/dt

di/dt

PARAMETER TEST CONDITIONS

V

= +12 V†

Latching current
Critical rate of rise of

off-state voltage
Critical rise of

(c)

commutation voltage
Critical rate of rise of
on -state current

supply

= -12 V†

V

supply

= Rated V

V

D

VD = Rated V
di/dt = 0.5 I

= Rated V

V

D

D

D

T(RMS)

D

diG/dt = 50 mA/µs

(see Note 5)

IG = 0 TC = 110°C ±450 V/µs

/ms

I

= 50 mA TC = 110°C ±200 A/µs

GT

T

= 80°C

C

= 1.4 I

I

T

T(RMS)

† All voltages are with respect to Main Terminal 1.
NOTE 5: The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics:

= 100 Ω, t

R

G

= 20 µs, tr = ≤ 15 ns, f = 1 kHz.

p(g)

thermal characteristics

PARAMETER MIN TYP MAX UNIT

R
R

Junction to case thermal resistance 1.9 °C/W

θJC

Junction to free air thermal resistance 62.5 °C/W

θJA

UNIT

mA

TYPICAL CHARACTERISTICS

GATE TRIGGER CURRENT

vs

CASE TEMPERATURE

1000

100

10

GT

V

1

supply IGTM

+ +
+ -

- -

- +

VAA = ± 12 V

RL = 10 ΩΩ

t

= 20 µs

p(g)

0·1

-60 -40 -20 0 20 40 60 80 100 120
TC - Case Temperature - °C

Figure 1. Figure 2.

TC10AA

GATE TRIGGER VOLTAGE

vs

CASE TEMPERATURE

0·1

ALL QUADRANTS

0·01

GT

0·001

-60 -40 -20 0 20 40 60 80 100 120
TC - Case Temperature - °C

VAA = ± 12 V

RL = 10 ΩΩ

t

= 20 µs

p(g)

TC10AB

PRODUCT INFORMATION

2

TYPICAL CHARACTERISTICS

I

- Latching Current - mA

TIC256 SERIES

SILICON TRIACS

JULY 1991 - REVISED MARCH 1997

HOLDING CURRENT

vs

CASE TEMPERATURE

100

10

1

- Holding Current - mA

H

I

V

supply

+

-

0·1

-60 -40 -20 0 20 40 60 80 100 120
TC - Case Temperature - °C

VAA = ± 12 V

IG = 0
Initiating ITM = 100 mA

Figure 3. Figure 4.

TC10AD

GATE FORWARD VOLTAGE

vs

GATE FORWARD CURRENT

10

MAX

TYP

1

0·1

- Gate Forward Voltage - V

GF

V

QUADRANT 1

0·01

0·001 0·01 0·1 1 10

IGF - Gate Forward Current - A

MIN

IA = 0
TC = 25 °C

TC10AC

LATCHING CURRENT

vs

CASE TEMPERATURE

1000

100

10

L

V

supply IGTM

+ +

+ -

- -

- +

1

-60 -40 -20 0 20 40 60 80 100 120
TC - Case Temperature - °C

VAA = ± 12 V

Figure 5.

TC10AE

PRODUCT INFORMATION

3

TIC256 SERIES

Version 1, 18.0 mm. Version 2, 17.6 mm.

SILICON TRIACS

JULY 1991 - REVISED MARCH 1997

MECHANICAL DATA

TO-220

3-pin plastic flange-mount package

This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.

TO220

3,96

ø

3,71

see Note B

see Note C

0,97
0,61

10,4
10,0

1 2 3

1,70
1,07

2,74
2,34

5,28
4,88

2,95
2,54

6,1
3,5

4,70
4,20

1,32
1,23

6,6
6,0

15,90
14,55

14,1
12,7

0,64
0,41

2,90
2,40

NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.

PRODUCT INFORMATION

4

VERSION 2 VERSION 1

ALL LINEAR DIMENSIONS IN MILLIMETERS

MDXXBE

TIC256 SERIES

SILICON TRIACS

JULY 1991 - REVISED MARCH 1997

IMPORTANT NOTICE

Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.

PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.

PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.

PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.

Copyright © 1997, Power Innovations Limited

PRODUCT INFORMATION

5