Datasheet TIC256S, TIC256M, TIC256N, TIC256D Datasheet (Power Innovations)

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Page 1

TIC256 SERIES

SILICON TRIACS

● High Current Triacs

● 20 A RMS

● Glass Passivated Wafer

● 400 V to 800 V Off-State Voltage

MT1 MT2

● 150 A Peak Current

● Max I

of 50 mA (Quadrants 1 - 3)

Pin 2 is in electrical contact with the mounting base.

absolute maximum ratings over operating case temperature (unless otherwise noted)

RATING SYMBOL VALUE UNIT

TIC256D

Repetitive peak off-state voltage (see Note 1)

Full-cycle RMS on-state current at (or below) 60°C case temperature (see Note 2) I Peak on-state surge current full-sine-wave (see Note 3) I Peak gate current I Operating case temperature range T Storage temperature range T Lead temperature 1.6 mm from case for 10 seconds T

NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.

2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 60°C derate linearly to 110°C case temperature at the rate of 500 mA/°C.

3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.

TIC256M TIC256S TIC256N

TO-220 PACKAGE

(TOP VIEW)

1 2 3

DRM

T(RMS)

TSM

stg

400 600 700 800

20 A

150 A

±1 A

-40 to +110 °C

-40 to +125 °C 230 °C

MDC2ACA

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER TEST CONDITIONS

DRM

GTM

V I

GTM

Repetitive peak off-state current

Peak gate trigger current

Peak gate trigger voltage

Peak on-state voltage ITM = ±28.2 A IG = 50 mA (see Note 4) ±1.4 ±1.7 V Holding current

= Rated V

supply

DRM

= +12 V† = +12 V† = -12 V† = -12 V† = +12 V† = +12 V† = -12 V† = -12 V†

= +12 V† = -12 V†

IG = 0 TC = 110°C ±2 mA R

= 10 Ω

RL = 10 Ω RL = 10 Ω RL = 10 Ω R

= 10 Ω

RL = 10 Ω RL = 10 Ω RL = 10 Ω

= 0

p(g)

Init’ I Init’ I

> 20 µs > 20 µs > 20 µs > 20 µs > 20 µs > 20 µs > 20 µs > 20 µs

= 100 mA

= -100 mA

† All voltages are with respect to Main Terminal 1. NOTE 4: This parameter must be measured using pulse techniques, t

the current carrying contacts are located within 3.2 mm from the device body.

= ≤ 1 ms, duty cycle ≤ 2 %. Voltage-sensing contacts separate from

PRODUCT INFORMATION

Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.

MIN TYP MAX

-15

-50

-16

-50

0.7

-0.7

-0.8

0.8

-2

-2 2

-1340-40

UNIT

Page 2

TIC256 SERIES

- Gate Trigger Current - mA

- Gate Trigger Voltage - V

SILICON TRIACS

JULY 1991 - REVISED MARCH 1997

electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)

MIN TYP MAX

-20

±1 V/µs

dv/dt

di/dt

PARAMETER TEST CONDITIONS

= +12 V†

Latching current Critical rate of rise of

off-state voltage Critical rise of

(c)

commutation voltage Critical rate of rise of on -state current

supply

= -12 V†

supply

= Rated V

VD = Rated V di/dt = 0.5 I

= Rated V

T(RMS)

diG/dt = 50 mA/µs

(see Note 5)

IG = 0 TC = 110°C ±450 V/µs

/ms

= 50 mA TC = 110°C ±200 A/µs

= 80°C

= 1.4 I

T(RMS)

† All voltages are with respect to Main Terminal 1. NOTE 5: The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics:

= 100 Ω, t

= 20 µs, tr = ≤ 15 ns, f = 1 kHz.

p(g)

thermal characteristics

PARAMETER MIN TYP MAX UNIT

R R

Junction to case thermal resistance 1.9 °C/W

θJC

Junction to free air thermal resistance 62.5 °C/W

θJA

UNIT

TYPICAL CHARACTERISTICS

GATE TRIGGER CURRENT

CASE TEMPERATURE

1000

100

supply IGTM

+ + + -

- -

- +

VAA = ± 12 V

RL = 10 ΩΩ

= 20 µs

p(g)

0·1

-60 -40 -20 0 20 40 60 80 100 120 TC - Case Temperature - °C

Figure 1. Figure 2.

TC10AA

GATE TRIGGER VOLTAGE

CASE TEMPERATURE

0·1

ALL QUADRANTS

0·01

0·001

-60 -40 -20 0 20 40 60 80 100 120 TC - Case Temperature - °C

VAA = ± 12 V

RL = 10 ΩΩ

= 20 µs

p(g)

TC10AB

PRODUCT INFORMATION

Page 3

TYPICAL CHARACTERISTICS

- Latching Current - mA

TIC256 SERIES

SILICON TRIACS

JULY 1991 - REVISED MARCH 1997

HOLDING CURRENT

CASE TEMPERATURE

100

- Holding Current - mA

supply

0·1

-60 -40 -20 0 20 40 60 80 100 120 TC - Case Temperature - °C

VAA = ± 12 V

IG = 0 Initiating ITM = 100 mA

Figure 3. Figure 4.

TC10AD

GATE FORWARD VOLTAGE

GATE FORWARD CURRENT

MAX

TYP

0·1

- Gate Forward Voltage - V

QUADRANT 1

0·01

0·001 0·01 0·1 1 10

IGF - Gate Forward Current - A

MIN

IA = 0 TC = 25 °C

TC10AC

LATCHING CURRENT

CASE TEMPERATURE

1000

100

supply IGTM

+ +

+ -

- -

- +

-60 -40 -20 0 20 40 60 80 100 120 TC - Case Temperature - °C

VAA = ± 12 V

Figure 5.

TC10AE

PRODUCT INFORMATION

Page 4

TIC256 SERIES

Version 1, 18.0 mm. Version 2, 17.6 mm.

SILICON TRIACS

JULY 1991 - REVISED MARCH 1997

MECHANICAL DATA

TO-220

3-pin plastic flange-mount package

This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.

TO220

3,96

3,71

see Note B

see Note C

0,97 0,61

10,4 10,0

1 2 3

1,70 1,07

2,74 2,34

5,28 4,88

2,95 2,54

6,1 3,5

4,70 4,20

1,32 1,23

6,6 6,0

15,90 14,55

14,1 12,7

0,64 0,41

2,90 2,40

NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version.

PRODUCT INFORMATION

VERSION 2 VERSION 1

ALL LINEAR DIMENSIONS IN MILLIMETERS

MDXXBE

Page 5

TIC256 SERIES

SILICON TRIACS

JULY 1991 - REVISED MARCH 1997

IMPORTANT NOTICE

Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current.

PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements.

PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used.

PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.

PRODUCT INFORMATION