Page 1
● Sensitive Gate Triacs
● 4 A RMS
● Glass Passivated Wafer
● 400 V to 800 V Off-State Voltage
● Max I
of 5 mA (Quadrants 1 - 3)
GT
MT1
MT2
TIC206 SERIES
SILICON TRIACS
DECEMBER 1971 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK
TO-220 PACKAGE
(TOP VIEW)
1
2
G
3
Pin 2 is in electrical contact with the mounting base.
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING SYMBOL VALUE UNIT
TIC206D
Repetitive peak off-state voltage (see Note 1)
TIC206M
TIC206S
V
DRM
TIC206N
Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2) I
Peak on-state surge current full-sine-wave (see Note 3) I
Peak on-state surge current half-sine-wave (see Note 4) I
Peak gate current I
Peak gate power dissipation at (or below) 85°C case temperature (pulse width
≤ 200 µs) P
Average gate power dissipation at (or below) 85°C case temperature (see Note 5) P
Operating case temperature range T
Storage temperature range T
Lead temperature 1.6 mm from case for 10 seconds T
T(RMS)
TSM
TSM
GM
GM
G(AV)
C
stg
L
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at
the rate of 160 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
5. This value applies for a maximum averaging time of 20 ms.
400
600
700
800
25 A
30 A
±0.2 A
1.3 W
0.3 W
-40 to +110 °C
-40 to +125 °C
230 °C
MDC2ACA
V
4 A
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS
I
DRM
I
GTM
V
GTM
Repetitive peak
off-state current
Peak gate trigger
current
Peak gate trigger
voltage
= rated V
V
D
V
supply
V
supply
V
supply
V
supply
V
supply
V
supply
V
supply
V
supply
DRM
= +12 V†
= +12 V†
= -12 V†
= -12 V†
= +12 V†
= +12 V†
= -12 V†
= -12 V†
IG = 0 TC = 110°C ±1 mA
R
= 10 Ω
L
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
R
= 10 Ω
L
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
t
t
t
t
t
t
t
t
p(g)
p(g)
p(g)
p(g)
p(g)
p(g)
p(g)
p(g)
> 20 µs
> 20 µs
> 20 µs
> 20 µs
> 20 µs
> 20 µs
> 20 µs
> 20 µs
† All voltages are with respect to Main Terminal 1.
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
MIN TYP MAX
0.5
-1.5
-2
3.6
0.7
-0.7
-0.8
0.8
5
-5
-5
10
2
-2
-2
2
UNIT
mA
V
1
Page 2
TIC206 SERIES
SILICON TRIACS
DECEMBER 1971 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)
PARAMETER TEST CONDITIONS
V
TM
I
H
I
L
dv/dt
dv/dt
Peak on-state voltage ITM = ±4.2 A IG = 50 mA (see Note 6) ±1.3 ±2.2 V
Holding current
Latching current
Critical rate of rise of
off-state voltage
Critical rise of
(c)
commutation voltage
V
V
V
V
V
V
supply
supply
supply
supply
DRM
DRM
= +12 V†
= -12 V†
= +12 V†
= -12 V†
= Rated V
= Rated V
I
= 0
G
= 0
I
G
(see Note 7)
DRMIG
DRMITRM
= 0 TC = 110°C ±50 V/µs
= ±4.2 A TC = 85°C ±1 ±1.3 ±2.5 V/µs
† All voltages are with respect to Main Terminal 1.
NOTES: 6. This parameter must be measured using pulse techniques, t
the current carrying contacts are located within 3.2 mm from the device body.
7. The triacs are triggered by a 15-V (open circuit amplitude) pulse supplied by a generator with the following characteristics:
= 100 Ω, t
R
G
= 20 µs, tr = ≤ 15 ns, f = 1 kHz.
p(g)
thermal characteristics
PARAMETER MIN TYP MAX UNIT
R
R
Junction to case thermal resistance 7.8 °C/W
θJC
Junction to free air thermal resistance 62.5 °C/W
θJA
MIN TYP MAX
Init’ I
Init’ I
= 100 mA
TM
= -100 mA
TM
2
-4
-15
-30
= ≤ 1 ms, duty cycle ≤ 2 %. Voltage-sensing contacts separate from
p
15
30
UNIT
mA
mA
TYPICAL CHARACTERISTICS
GATE TRIGGER CURRENT
vs
TEMPERA TURE
1000
V
supply IGTM
+ +
+ -
100
- -
- +
10
- Gate Trigger Current - mA
GT
1
I
0·1
-60 -40 -20 0 20 40 60 80 100 120
TC - Case Temperature - °C
Figure 1. Figure 2.
VAA = ± 12 V
RL = 10 ΩΩ
t
w(g)
TC05AA
= 20 µs
GATE TRIGGER VOLTAGE
vs
TEMPERATURE
10
V
supply IGTM
+ +
}
+ -
- }
- +
1
- Gate Trigger Voltage - V
GT
V
0·1
-60 -40 -20 0 20 40 60 80 100 120
TC - Case Temperature - °C
VAA = ± 12 V
RL = 10 ΩΩ
t
= 20 µs
w(g)
TC05AB
PRODUCT INFORMATION
2
Page 3
TYPICAL CHARACTERISTICS
TIC206 SERIES
SILICON TRIACS
DECEMBER 1971 - REVISED MARCH 1997
HOLDING CURRENT
vs
CASE TEMPERATURE
100
VAA = ± 12 V
IG = 0
Initiating ITM = 100 mA
10
V
1
- Holding Current - mA
H
I
0·1
supply
+
-
-60 -40 -20 0 20 40 60 80 100 120
TC - Case Temperature - °C
Figure 3. Figure 4.
TC05AD
GATE FORWARD VOLTAGE
vs
GATE FORWARD CURRENT
10
1
0·1
- Gate Forward Voltage - V
GF
V
QUADRANT 1
0·01
0·0001 0·001 0·01 0·1 1
IGF - Gate Forward Current - A
IA = 0
TC = 25 °C
TC05AC
LATCHING CURRENT
vs
CASE TEMPERATURE
100
V
supply IGTM
+ +
+ -
- -
- +
10
- Latching Current - mA
L
I
1
-60 -40 -20 0 20 40 60 80 100 120
TC - Case Temperature - °C
VAA = ± 12 V
Figure 5.
TC05AE
PRODUCT INFORMATION
3
Page 4
TIC206 SERIES
Version 1, 18.0 mm. Version 2, 17.6 mm.
SILICON TRIACS
DECEMBER 1971 - REVISED MARCH 1997
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO220
3,96
ø
3,71
see Note B
see Note C
0,97
0,61
10,4
10,0
1 2 3
1,70
1,07
2,74
2,34
5,28
4,88
2,95
2,54
6,1
3,5
4,70
4,20
1,32
1,23
6,6
6,0
15,90
14,55
14,1
12,7
0,64
0,41
2,90
2,40
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
PRODUCT INFORMATION
4
VERSION 2 VERSION 1
ALL LINEAR DIMENSIONS IN MILLIMETERS
MDXXBE
Page 5
TIC206 SERIES
SILICON TRIACS
DECEMBER 1971 - REVISED MARCH 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited
PRODUCT INFORMATION
5
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