Datasheet TIC201 Datasheet (Power Innovations)

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● Sensitive Gate Triacs

● 2.5 A RMS

● Glass Passivated Wafer

● 400 V to 800 V Off-State Voltage

● Max I

of 5 mA (Quadrant 1)

GT

MT1
MT2

TIC201 SERIES

SILICON TRIACS

JANUARY 1977 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK

TO-220 PACKAGE

(TOP VIEW)

1
2

G

3

Pin 2 is in electrical contact with the mounting base.

absolute maximum ratings over operating case temperature (unless otherwise noted)

RATING SYMBOL VALUE UNIT

TIC201D

Repetitive peak off-state voltage (see Note 1)

TIC201M
TIC201S

V

DRM

TIC201N
Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2) I
Peak on-state surge current full-sine-wave (see Note 3) I
Peak on-state surge current half-sine-wave (see Note 4) I
Peak gate current I
Peak gate power dissipation at (or below) 85°C case temperature (pulse width

≤ 200 µs) P
Average gate power dissipation at (or below) 85°C case temperature (see Note 5) P
Operating case temperature range T
Storage temperature range T
Lead temperature 1.6 mm from case for 10 seconds T

T(RMS)

TSM
TSM

GM

GM

G(AV)

C

stg

L

NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.

2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at
the rate of 100 mA/°C.

3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.

4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.

5. This value applies for a maximum averaging time of 20 ms.

400
600
700
800

2.5 A
12 A
14 A

±0.2 A

1.3 W

0.3 W

-40 to +110 °C

-40 to +125 °C
230 °C

MDC2ACA

V

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER TEST CONDITIONS

I

DRM

I

GTM

V

GTM

Repetitive peak
off-state current

Peak gate trigger
current

Peak gate trigger
voltage

= rated V

V

D

V

supply

V

supply

V

supply

V

supply

V

supply

V

supply

V

supply

V

supply

DRM

= +12 V†
= +12 V†
= -12 V†
= -12 V†
= +12 V†
= +12 V†
= -12 V†
= -12 V†

IG = 0 TC = 110°C ±1 mA
R

= 10 Ω

L

RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
R

= 10 Ω

L

RL = 10 Ω
RL = 10 Ω
RL = 10 Ω

t
t
t
t
t
t
t
t

p(g)
p(g)
p(g)
p(g)
p(g)
p(g)
p(g)
p(g)

> 20 µs
> 20 µs
> 20 µs
> 20 µs
> 20 µs
> 20 µs
> 20 µs
> 20 µs

† All voltages are with respect to Main Terminal 1.

PRODUCT INFORMATION

Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.

MIN TYP MAX

5

-8

-10
25

0.9

2.5

-1.2

-1.2

-2.5

-2.5

1.2

UNIT

mA

V

1

TIC201 SERIES
SILICON TRIACS

JANUARY 1977 - REVISED MARCH 1997

electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)

PARAMETER TEST CONDITIONS

V

TM

I

H

I

L

dv/dt

dv/dt

Peak on-state voltage ITM = ±3.5 A IG = 50 mA (see Note 6) ±1.9 V
Holding current

Latching current
Critical rate of rise of

off-state voltage
Critical rise of

(c)

commutation voltage

V
V
V
V

V

V

supply
supply
supply
supply

DRM

DRM

= +12 V†
= -12 V†
= +12 V†
= -12 V†

= Rated V

= Rated V

I

= 0

G

= 0

I

G

(see Note 7)

DRMIG

DRMITRM

= 0 TC = 110°C ±50 V/µs

= ±3.5 A TC = 85°C ±2 V/µs

† All voltages are with respect to Main Terminal 1.
NOTES: 6. This parameter must be measured using pulse techniques, t

the current carrying contacts are located within 3.2 mm from the device body.

7. The triacs are triggered by a 15-V (open circuit amplitude) pulse supplied by a generator with the following characteristics:
= 100 Ω, t

R

G

= 20 µs, tr = ≤ 15 ns, f = 1 kHz.

p(g)

thermal characteristics

PARAMETER MIN TYP MAX UNIT

R
R

Junction to case thermal resistance 10 °C/W

θJC

Junction to free air thermal resistance 62.5 °C/W

θJA

MIN TYP MAX

Init’ I

= 100 mA

TM

= - 100 mA

Init’ I

TM

= ≤ 1 ms, duty cycle ≤ 2 %. Voltage-sensing contacts separate from

p

30

-30
40

-40

UNIT

mA

mA

PRODUCT INFORMATION

2

TIC201 SERIES

Version 1, 18.0 mm. Version 2, 17.6 mm.

SILICON TRIACS

JANUARY 1977 - REVISED MARCH 1997

MECHANICAL DATA

TO-220

3-pin plastic flange-mount package

This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.

TO220

3,96

ø

3,71

see Note B

see Note C

0,97
0,61

10,4
10,0

1 2 3

1,70
1,07

2,74
2,34

5,28
4,88

2,95
2,54

6,1
3,5

4,70
4,20

1,32
1,23

6,6
6,0

15,90
14,55

14,1
12,7

0,64
0,41

2,90
2,40

NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.

PRODUCT INFORMATION

VERSION 2 VERSION 1

ALL LINEAR DIMENSIONS IN MILLIMETERS

MDXXBE

3

TIC201 SERIES
SILICON TRIACS

JANUARY 1977 - REVISED MARCH 1997

IMPORTANT NOTICE

Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.

PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.

PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.

PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.

Copyright © 1997, Power Innovations Limited

PRODUCT INFORMATION

4