Datasheet TIC108S, TIC108N, TIC108M, TIC108D Datasheet (Power Innovations)

● 5 A Continuous On-State Current

● 20 A Surge-Current

● Glass Passivated Wafer

● 400 V to 800 V Off-State Voltage

● Max I

of 1 mA

GT

TIC108 SERIES

SILICON CONTROLLED RECTIFIERS

APRIL 1971 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK

TO-220 PACKAGE

(TOP VIEW)

K
A

G

1
2
3

Pin 2 is in electrical contact with the mounting base.

absolute maximum ratings over operating case temperature (unless otherwise noted)

RATING SYMBOL VALUE UNIT

TIC108D

Repetitive peak off-state voltage (see Note 1)

Repetitive peak reverse voltage

Continuous on-state current at (or below) 80°C case temperature (see Note 2) I
Average on-state current (180° conduction angle) at (or below) 80°C case temperature
(see Note 3)
Surge on-state current (see Note 4) I
Peak positive gate current (pulse width
Peak gate power dissipation (pulse width
Average gate power dissipation (see Note 5) P
Operating case temperature range T
Storage temperature range T
Lead temperature 1.6 mm from case for 10 seconds T

NOTES: 1. These values apply when the gate-cathode resistance RGK = 1 kΩ.

2. These values apply for continuous dc operation with resistive load. Above 80°C derate linearly to zero at 110°C.

3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 80°C derate
linearly to zero at 110°C.

4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.

5. This value applies for a maximum averaging time of 20 ms.

.

≤ 300 µs) I

≤ 300 µs) P

TIC108M
TIC108S
TIC108N
TIC108D
TIC108M
TIC108S
TIC108N

V

DRM

V

RRM

T(RMS)

I

T(AV)

TM
GM

GM

G(AV)

C

stg

L

400
600
700
800
400
600
700
800

3.2 A
20 A

0.2 A

1.3 W

0.3 W

-40 to +110 °C

-40 to +125 °C
230 °C

MDC1ACA

V

V

5 A

PRODUCT INFORMATION

Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.

1

TIC108 SERIES
SILICON CONTROLLED RECTIFIERS

APRIL 1971 - REVISED MARCH 1997

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

I

I

dv/dt

Repetitive peak

DRM

off-state current
Repetitive peak

RRM

reverse current
Gate trigger current VAA = 6 V RL= 100 Ω t

I

GT

Gate trigger voltage

V

GT

Holding current

I

H

Peak on-state

V

TM

voltage
Critical rate of rise of
off-state voltage

NOTE 6: This parameter must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2 %. Voltage sensing-contacts, separate from

the current carrying contacts, are located within 3.2 mm from the device body.

= rated V

V

D

= rated V

V

R

V

= 6 V

AA

≥ 20 µs

t

p(g)

= 6 V

V

AA

≥ 20 µs

t

p(g)

= 6 V

V

AA

≥ 20 µs

t

p(g)

V

= 6 V

AA

Initiating I

= 6 V

V

AA

Initiating I

= 5 A (see Note 6) 1.7 V

I

TM

= rated V

V

D

DRM

RRM

= 20 mA

T

= 20 mA

T

D

RGK = 1 kΩ TC = 110°C 400 µA

IG = 0 TC = 110°C 1 mA

≥ 20 µs 0.2 1 mA

R

= 100 Ω

L

RGK= 1 kΩ
R

= 100 Ω

L

RGK= 1 kΩ
R

= 100 Ω

L

RGK= 1 kΩ
R

= 1 kΩ TC = - 40°C

GK

R

= 1 kΩ

GK

p(g)

TC = - 40°C

TC = 110°C

1.2

0.4 0.6 1

0.2

15

10

RGK= 1 kΩ TC = 110°C 80 V/µs

V

mA

thermal characteristics

PARAMETER MIN TYP MAX UNIT

R
R

Junction to case thermal resistance 3.5 °C/W

θJC

Junction to free air thermal resistance 62.5 °C/W

θJA

resistive-load-switching characteristics at 25°C case temperature

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Gate-controlled

t

gt

turn-on time
Circuit-commutated

t

q

turn-off time

= 5 A IG = 10 mA See Figure 1 2.9 µs

I

T

= 5 A IRM = 8 A See Figure 2 13.3 µs

I

T

PRODUCT INFORMATION

2

TIC108 SERIES

30 V

SILICON CONTROLLED RECTIFIERS

APRIL 1971 - REVISED MARCH 1997

PARAMETER MEASUREMENT INFORMATION

I

ΩΩ

6

R

G

G

V

G

I

G

T

V

V

A

G

10%

DUT

V

A

Figure 1. Gate-controlled turn-on time

30 V

t

gt

90%

PMC1AA

G1

ΩΩ

6

0.1 µµF

to 0.5 µµF

R2

NOTES: A. Resistor R1 is adjusted for the specified value
of IRM.
B. Resistor R2 value is 30/IH, where IH is the

I

A

R1

holding current value of thyristor TH1.
C. Thyristor TH1 is the same device type as the
DUT.

V

A

ΩΩ

DUT

V

K

(IRM Monitor)

R

G

V

G1

I

G

0.1

TH1

R

G

I

G

D. Pulse Generators, G1 and G2, are
synchronised to produce an on-state anode
current waveform with the following
characteristics:
tP = 50 µs to 300 µs

G2

duty cycle = 1%

V

G2

E. Pulse Generators, G1 and G2, have output
pulse amplitude, VG, of ≥ 20 V and duration of

10 µs to 20 µs.

G2 tP Synchronisation

V

G1

V

G2

I

I

A

t

P

T

0

I

RM

V

A

V

Figure 2. Circuit-commutated turn-off time

PRODUCT INFORMATION

T

0

t

q

PMC1AB

3

TIC108 SERIES

AVERAGE ANODE ON-STATE CURRENT

MAX CONTINUOUS ANODE POWER DISSIPATED

P

- Max Continuous Anode Power Dissipated - W

SURGE ON-STATE CURREN

T

TRANSIENT THERMAL RESISTANC

E

SILICON CONTROLLED RECTIFIERS

APRIL 1971 - REVISED MARCH 1997

TYPICAL CHARACTERISTICS

DERATING CURVE

6

Continuous DC

5

4

ΦΦ = 180°

3

2

0° 180°

1

- Maximum Average Anode Forward Current - A

T(AV)

0

I

30 40 50 60 70 80 90 100 110

ΦΦ

Conduction

Angle

TC - Case Temperature - °C

Figure 3. Figure 4.

TI23AA

vs

CONTINUOUS ANODE ON-STATE CURRENT

100

TJ = 110 °C

10

A

1

1 10 100

IT - Continuous Anode Forward Current - A

TI23AB

vs

CYCLES OF CURRENT DURATION

100

TC ≤≤ 80°C

No Prior Device Conduction

Gate Control Guaranteed

10

- Peak Half-Sine-Wave Current - A

TM

I

1

1 10 100

Consecutive 50 Hz Half-Sine-Wave Cycles

Figure 5. Figure 6.

TI23AC

vs

CYCLES OF CURRENT DURATION

10

1

- Transient Thermal Resistance - °C/W

θ

θJC(t)

R

0·1

1 10 100

Consecutive 50 Hz Half-Sine-Wave Cycles

TI23AD

PRODUCT INFORMATION

4

SILICON CONTROLLED RECTIFIERS

GATE TRIGGER CURREN

T

GATE TRIGGER VOLTAG

E

V

- Gate Trigger Voltage - V

GATE FORWARD VOLTAG

E

HOLDING CURRENT

TYPICAL CHARACTERISTICS

TIC108 SERIES

APRIL 1971 - REVISED MARCH 1997

vs

CASE TEMPERATURE

10

VAA = 6 V
RL = 100 ΩΩ
t

≥≥ 20 µs

p(g)

1

- Gate Trigger Current - mA

GT

I

0·1

-60 -40 -20 0 20 40 60 80 100 120
TC - Case Temperature - °C

Figure 7. Figure 8.

TC23AA

vs

CASE TEMPERATURE

0·9

VAA = 6 V

0·8

0·7

0·6

GT

0·5

0·4

-50 -25 0 25 50 75 100 125

RL = 100 ΩΩ

RGK = 1 kΩΩ
t

≥≥ 20 µs

p(g)

TC - Case Temperature - °C

TC23AB

vs

GATE FORWARD CURRENT

100

IA = 0
TC = 25 °C
tp = 300 µs
Duty Cycle ≤≤ 2 %

10

- Gate Forward Voltage - V

GF

V

1

0·1 1 10 100 1000

IGF - Gate Forward Current - mA

Figure 9. Figure 10.

TC23AC

vs

CASE TEMPERATURE

10

VAA = 6 V

RGK = 1 kΩΩ
Initiating IT = 20 mA

- Holding Current - mA

H

I

1

-50 -25 0 25 50 75 100 125
TC - Case Temperature - °C

TC23AD

PRODUCT INFORMATION

5

TIC108 SERIES

T

M

GATE-CONTROLLED TURN-ON TIM

E

CIRCUIT-COMMUTATED TURN-OFF TIM

E

SILICON CONTROLLED RECTIFIERS

APRIL 1971 - REVISED MARCH 1997

TYPICAL CHARACTERISTICS

PEAK ON-STATE VOLTAGE

vs

PEAK ON-STATE CURRENT

2.6
TC = 25 °C

2.4

tp = 300 µs
Duty Cycle ≤≤ 2 %

2.2

TC23AE

3.1

3.0

vs

GATE CURRENT

TC23AF

2.0

1.8

1.6

1.4

- Peak On-State Voltage - V

TM

V

1.2

1.0

0.8

0·1 1 10

I

- Peak On-State Current - A

Figure 11. Figure 12.

21

20

19

18

CASE TEMPERATURE

VAA = 30 V
RL = 6 ΩΩ
IRM = 8 A
tp = 300 µs
Duty Cycle ≤≤ 2 %

vs

2.9

2.8

2.7
VAA = 30 V

- Gate Controlled Turn-On Time - µs

gt

t

RL = 6 ΩΩ

2.6

TC = 25 °C

See Test Circuit and Waveforms

2.5

1 10 100

IG - Gate Current - mA

TC23AG

17

16

15

14

- Circuit-Commutated Turn-Off Time - µs

q

t

13

12

20 30 40 50 60 70 80 90 100 110 120

TC - Case Temperature - °C

Figure 13.

PRODUCT INFORMATION

6

TIC108 SERIES

Version 1, 18.0 mm. Version 2, 17.6 mm.

SILICON CONTROLLED RECTIFIERS

APRIL 1971 - REVISED MARCH 1997

MECHANICAL DATA

TO-220

3-pin plastic flange-mount package

This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.

TO220

3,96

ø

3,71

see Note B

see Note C

0,97
0,61

10,4
10,0

1 2 3

1,70
1,07

2,74
2,34

5,28
4,88

2,95
2,54

6,1
3,5

4,70
4,20

1,32
1,23

6,6
6,0

15,90
14,55

14,1
12,7

0,64
0,41

2,90
2,40

NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.

PRODUCT INFORMATION

VERSION 2 VERSION 1

ALL LINEAR DIMENSIONS IN MILLIMETERS

MDXXBE

7

TIC108 SERIES
SILICON CONTROLLED RECTIFIERS

APRIL 1971 - REVISED MARCH 1997

IMPORTANT NOTICE

Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.

PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.

PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.

PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.

Copyright © 1997, Power Innovations Limited

PRODUCT INFORMATION

8