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.OPTIMIZED FOR SSB
.30 MHz
.50 VOLTS
.IMD −30 dB
.COMMON EMITTER
.GOLD METALLIZATION
.P
= 150 W PEP MIN. WITH 14 dB GAIN
OUT
SD1727 (THX15)
RF & MICROWAVE TRANSISTORS
HF SSB APPLICATIONS
.500 4LFL (M164)
epoxy sealed
ORDER CO DE
SD1727
PIN CONNECTION
BRANDING
THX15
DESCRIPTION
The SD17 27 is a 50 V epitaxial silicon NPN planar
transistor designed primarily for SSB communications. This device utilizes emitter ballasting to
achieve extreme ruggedness under severe operating conditions.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
THERMAL DATA
R
TH(j-c)
Collector-Base Voltage 110 V
Collector-Emitter Voltage 55 V
Emitter-Base Voltage 4.0 V
Device Current 10 A
Power Dissipation 233 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 0.75 °C/W
case
= 25°C)
1. Collector 3. Base
2. Emitter 4. Emitter
65 to +150
−
°
C
°
C
November 1992
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Page 2
SD1727 (THX15)
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Condi tions
BV
BV
BV
BV
I
I
CBO
CES
CEO
EBO
CEO
CES
h
FE
IC = 100mA IE = 0mA 110 — — V
IC = 100mA VBE = 0V 110 — — V
IC = 100mA IB = 0mA 55 — — V
IE = 10mA IC = 0mA 4.0 — — V
VCE = 30V IE = 0mA — — 5 mA
VCE = 60V IE = 0mA — — 5 mA
VCE = 6V IC = 1.4A 18 — 43.5 —
DYNAMIC
Symbol Test Conditi ons
P
OUT
GP*P
IMD* P
η
c* P
C
OB
Note: The SD1727 i s als o usabl e i n C lass A at 4 0 V. Typ ic al pe rfor mance i s:
f = 30 MHz VCE = 50 V ICQ = 100mA 150 — — W
= 150 W PEP VCE = 50 V ICQ = 100mA 14 — — dB
OUT
= 150 W PEP VCE = 50 V ICQ = 100mA — — −30 dBc
OUT
= 150 W PEP VCE = 50 V ICQ = 100mA 37 — — %
OUT
f = 1 MHz VCB = 50 V — — 220 pF
P
= 30 W PEP, GP = 14 dB, IMD
OUT
* f1 = 30.00 MHz ; f2 = 30.001 MHz
=
−
40dBc
Valu e
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
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TYPICAL PERFORMANCE
INTERMODULATION DISTORTION vs POWER
SD1727 (THX15)
OUTPUT PEP
POWER OUTPUT PEP vs POWER INPUT
COLLECTOR EFFICIENCY vs POWER OUTPUT PEP
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Page 4
SD1727 (THX15)
TYPICAL PERFORMANCE (cont’d)
POWER GAIN vs FREQUENCY
POWER GAIN vs POWER OUTPUT PEP
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SAFE OPERATING AREA
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IMPEDANCE DATA
SD1727 (THX15)
TYPICAL INPUT IMPEDANCE
BIAS CRCUIT
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Page 6
SD1727 (THX15)
TEST CIRCUIT - CLASS AB - 30 MHz
C1 : Arco 427
C2 : Arco 4611
C3 : Arco 4615
C4 : 220pF
C5, C6 : Arco 4215
C7 : Arco 426
C8, C12 : 100nF 63V
C9, C11
C15 : 1nF
C10 : 470µF 40V
C13 : 220µF 63V
C14 : 10nF
MOUNTING CIRCUIT - CLASS AB - 30MHz
L1 : 5 Turns Diameter 8mm, 1.3mm Wire, Length 15mm
L2 : Hair Pin Copper Foil 20 x 5mm, 0.2mm Thick
L3 : 1 Turn Diameter 10mm, 1.3mm Wire, Length 8mm
L4 : 6 Turns Diameter 8mm, 1.3mm Wire, Length 25mm
L5 : 4 Turns Diameter 12mm, 2mm Wire, Length 25mm
L6, L7
L8 : Choke
R : 0.6
Ω
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PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0164
SD1727 (THX15)
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1994 SGS-THOMSON Microelectronics - All Rights Reserved
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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