Datasheet THD218DHI Datasheet (SGS Thomson Microelectronics)



HIGH VOLTAGE FAST-SWITCHING

■ STMicroelectronics PREFERRED

SALESTYPE

■ HIGH VOLTAGECAPABILITY

■ U.L.RECOGNISED ISOWATT218PACKAGE

(U.L. FILE # E81734(N))

■ NPNTRANSISTOR WITH INTEGRATED

FREEWHEELINGDIODE.

THD218DHI

NPN POWER TRANSISTOR

APPLICATIONS

■ HORIZONTAL DEFLECTIONFOR COLOUR

TV

DESCRIPTION

This devices is manufacturedusingMultiepitaxial
Mesa technology for cost-effective high
performance and uses a Hollow Emitter structure
to enhanceswitchingspeeds.

The THDseries is designed for use in horizontal
deflectioncircuits in televisionsand monitors.

ABSOLUTE MAXIMUM RATINGS

3

2

1

ISOWATT218

INTERNAL SCHEMATIC DIAGRAM

Symb o l Parame t er Val u e Uni t

V
V
V

I

I
P

T

December 1999

Collector-Base Voltage (IE= 0) 1500 V

CBO

Collector-Emitter V oltage (IB= 0) 700 V

CEO

Emitter-Base Voltage (IC=0) 10 V

EBO

Collect or Current 7 A

I

C

Collect or Peak Cu rr ent (tp<5ms) 12 A

CM

Base Current 4 A

I

B

Base Peak Cu r rent (tp<5ms) 7 A

BM

Total Dis sipati on at Tc=25oC50W

tot

Stora ge Temperat u re -65 t o 150

stg

Max. O perat i ng J unc t i on Temperat u r e 150

T

j

o

C

o

C

1/6

THD218DHI

THERMAL DATA

R

thj-case

Ther mal Resistance Junct ion-case Max 2.5

o

C/W

ELECTRICAL CHARACTERISTICS (T

=25oC unless otherwise specified)

case

Symbol Parameter Test Cond itions Min. Typ. Max. Un it

I

I

V

CE(sat)

CES

Collector Cut- of f
Current (V

EBO

Emit ter Cut -off Current

=0)

(I

C

∗ Collector-E mitt er

BE

=0)

V

=1500V

CE

=1500V Tj= 125oC

V

CE

V

=5V 300 mA

EB

0.2
2

IC=4A IB=1A 1.5 V

Saturation Voltage

V

BE(sat )

∗ Base-Emitt er

IC=4A IB=1A 1.3 V

Saturation Voltage

∗ DC Current Gain IC=4A VCE=5V

h

FE

INDUCTI VE LO AD

t

V

∗

Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

St orage Time

s

t

Fall Time

f

Diode Forward Voltage IF=4A 2.5 V

F

=4A VCE=5V Tj= 100oC

I

C

IC= 4 A f = 15625 Hz

=1A IB2=-2A

I

B1

V

ceflyback

= 1050 sin

5

3.5

4.7



π



6

tV

10





5





0.48

10

mA
mA

µs
µs

Safe OperatingArea ThermalImpedance

2/6

THD218DHI

Derating Curve

CollectorEmitter SaturationVoltage

DC Current Gain

BaseEmitter Saturation Voltage

InductiveFall TimeI

InductiveStorage Time

3/6

THD218DHI

ReverseBiased SOA

BASEDRIVE INFORMATION

In order to saturate the power switch and reduce
conduction losses, adequate direct base current
I

has to be provided for the lowest gain hFEat

B1

o

C (line scan phase). On the other hand,

100
negative base current I
turn off the powertransistor (retracephase).

Most of the dissipation, in the deflection
application, occurs at switch-off. Therefore it is
essential to determine the value of I
minimizes power losses, fall time t
consequently,T

. A new set of curves have been

j

defined to give total power losses, t
function of I

at both 16 KHz and 32 KHz

B2

scanning frequencies for choosing the optimum
negative drive. The test circuit is illustrated in

must be provided to

B2

B2

and tfas a

s

which

f

and,

figure 1.
Inductance L

negative base current I

serves to control the slope of the

1

to recombine the

B2

excess carrier in the collector when base current
is still present, this would avoid any tailing
phenomenonin the collectorcurrent.

The values of L and C are calculated from the
followingequations:

C

)2=

1
2

C(V

CEfly

2

)

ω=2π

1

f

=

√

L

C

CEfly

1

L(I

2
Where IC= operating collector current, V

flyback voltage, f= frequency of oscillation during
retrace.

=

Figure 1: Inductive Load Switching Test Circuit.

4/6

ISOWATT218MECHANICAL DATA

THD218DHI

DIM.

A 5.35 5.65 0.211 0.222
C 3.30 3.80 0.130 0.150
D 2.90 3.10 0.114 0.122

D1 1.88 2.08 0.074 0.082

E 0.75 0.95 0.030 0.037

F 1.05 1.25 0.041 0.049
F2 1.50 1.70 0.059 0.067
F3 1.90 2.10 0.075 0.083

G 10.80 11.20 0.425 0.441
H 15.80 16.20 0.622 0.638

L 9 0.354
L1 20.80 21.20 0.819 0.835
L2 19.10 19.90 0.752 0.783
L3 22.80 23.60 0.898 0.929
L4 40.50 42.50 1.594 1.673
L5 4.85 5.25 0.191 0.207
L6 20.25 20.75 0.797 0.817

N 2.1 2.3 0.083 0.091
R 4.6 0.181

DIA 3.5 3.7 0.138 0.146

MIN. TYP. MAX. MIN. TYP. MAX.

mm inch

- Weight : 4.9g (typ.)

- Maximum Torque (applied to mountingflange) Recommended: 0.8 Nm; Maximum:1 Nm

- The side of thedissipator must beflat within 80 µm

P025C/A

5/6

THD218DHI

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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject tochange without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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