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HIGH VOLTAGE FAST-SWITCHING
■ STMicroelectronics PREFERRED
SALESTYPE
■ HIGH VOLTAGECAPABILITY
■ U.L.RECOGNISED ISOWATT218PACKAGE
(U.L. FILE # E81734(N)).
APPLICATIONS
■ HORIZONTAL DEFLECTIONFOR COLOUR
TV AND MONITORS
DESCRIPTION
This device is manufactured using Multiepitaxial
Mesa technology for cost-effective high
performance and uses a Hollow Emitter structure
to enhanceswitchingspeeds.
The THDseries is designed for use in horizontal
deflectioncircuits in televisionsand monitors.
THD215HI
NPN POWER TRANSISTOR
3
2
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parame t er Val u e Uni t
V
V
V
I
I
P
T
Collector-Base Voltage (IE= 0) 1500 V
CBO
Collector-Emitter V oltage (IB= 0) 700 V
CEO
Emitter-Base Voltage (IC=0) 10 V
EBO
Collect or Current 10 A
I
C
Collect or Peak Cu rr ent (tp<5ms) 20 A
CM
Base Current 5 A
I
B
Base Peak Cu r rent (tp<5ms) 10 A
BM
Total Dis sipati on at Tc=25oC57W
tot
Stora ge Temperat u re -65 t o 150
stg
Max. O perat i ng J unc t i on Temperat u r e 150
T
j
o
C
o
C
December 1999
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THD215HI
THERMAL DATA
R
thj-case
Ther mal Resistance Junct ion-case Max 2.2
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
Symbol Parameter Test Cond itions Min. Typ. Max. Un it
I
CEO
I
CES
I
EBO
V
CEO(sus)
Collector Cut- of f
Current (I
B
=0)
Collector Cut- of f
Current (V
BE
=0)
Emit ter Cut -off Current
=0)
(I
C
∗ Co llector- Emitt er
V
=700V 10 µA
CE
V
=1500V 10 µA
CE
V
=5V 100 µA
EB
I
= 100 mA 700 V
C
Sust aining Voltage
=0)
(I
B
V
∗ Collector-E mitt er
CE(sat)
IC=6A IB= 1.2 A 1.3 V
Saturation Voltage
V
BE(sat )
∗ Base-Emitt er
IC=6A IB= 1.2 A 1.3 V
Saturation Voltage
∗ DC Cur rent Gain IC=10mA VCE=5V
h
FE
INDUCTI VE LO AD
t
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
s
t
f
St orage Time
Fall Time
I
=6A VCE=5V
C
=6A VCE=5V Tj= 125oC
I
C
IC=4.5A f=64KHz
=1.5A IB2=-2.4A
I
B1
V
ceflyback
= 1100 sin
π
6
tV
10
5
10
6
13
4
3.3
160
µs
ns
Safe OperatingArea ThermalImpedance
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THD215HI
Derating Curve
CollectorEmitter SaturationVoltage
DC Current Gain
BaseEmitter Saturation Voltage
PowerLosses at 64 KHz
SwitchingTime Inductive Loadat 64 KHz
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THD215HI
ReverseBiased SOA
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ISOWATT218MECHANICAL DATA
THD215HI
DIM.
A 5.35 5.65 0.211 0.222
C 3.30 3.80 0.130 0.150
D 2.90 3.10 0.114 0.122
D1 1.88 2.08 0.074 0.082
E 0.75 0.95 0.030 0.037
F 1.05 1.25 0.041 0.049
F2 1.50 1.70 0.059 0.067
F3 1.90 2.10 0.075 0.083
G 10.80 11.20 0.425 0.441
H 15.80 16.20 0.622 0.638
L 9 0.354
L1 20.80 21.20 0.819 0.835
L2 19.10 19.90 0.752 0.783
L3 22.80 23.60 0.898 0.929
L4 40.50 42.50 1.594 1.673
L5 4.85 5.25 0.191 0.207
L6 20.25 20.75 0.797 0.817
N 2.1 2.3 0.083 0.091
R 4.6 0.181
DIA 3.5 3.7 0.138 0.146
MIN. TYP. MAX. MIN. TYP. MAX.
mm inch
- Weight : 4.9g (typ.)
- Maximum Torque (applied to mountingflange) Recommended: 0.8 Nm; Maximum:1 Nm
- The side of thedissipator must beflat within 80 µm
P025C/A
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THD215HI
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject tochange without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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