Page 1
Advance Product Information
d
-
B
B
300um Discrete pHEMT TGF4350-EPU
Key Features and Performance
• 0.25um pHEMT Technology
• DC 22 GHz Frequency Range
• 1.2 dB NF, 14.5 dB Associated
Gain at 10 GHz, 3V Operation
• Floating Source Configuration
• Chip Dimensions 0.5080 mm x
0.4064 mm
Primary Applications
• Low Noise amplifiers
17
F = 10 GHz
Vd = 3 V
15
Iq = 15 mA
13
11
9
7
Output Power-dBm, Gain-
5
16
15
14
13
12
11
10
9
8
7
6
Pout (dBm)
Gain (dB)
PAE (%)
F = 10 GHz
Associated Gain - d
3
1
-12 -8 -4 0 4 8 12
2.4
2.2
2.0
1.8
1.6
1.4
1.2
Noise Figure - d
1.0
0.8
0.6
0.4
5 101520253035404550
Drain Current - mA
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice
TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Inp ut P owe r - dBm
80
70
60
50
40
30
20
10
0
NF (dB) Vd = 3 V
NF (dB) Vd = 5 V
NF (dB) Vd = 8 V
Gain ( dB) Vd = 3 V
Gain ( dB) Vd = 5 V
Gain ( dB) Vd = 8 V
Power Added Efficiency
1
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Page 2
Advance Product Information
TGF4350-EPU
Electrical Characteristics
RECOMMENDED MAXIMUM RATINGS
Symbol Parameter Value Notes
+
V
+
I
P
D
P
IN
T
CH
T
M
T
STG
1/ These ratings apply to individual FET
2/ Junction operating temperature will directly affect the device mean time to failure
(MTTF). For maximum life it is recommended that junction temperatures be
maintained at the lowest possible levels.
3/ Nominal value of Idss
Positive Supply Voltage 7 V
Positive Supply Current .085A 3/
Power Dissipation 0.6 W
Input Continuous Wave Power 20 dBm
Operating Channel Temperature
Mounting Temperature (30 seconds)
Storage Temperature
150 °C
320 °C
-65 °C to 150 °C
1/, 2/
DC PROBE TESTS
= 25 °C ± 5°C)
(T
A
Symbol Parameter Minimum Maximum Value
Idss Saturated Drain Current (info
30 141 mA
only)
V
BV
BV
P1-5
GS1
GD1-5
Pinch-off Voltage -1.5 -0.5 V
Breakdown Voltage gate-source -30 -8 V
Breakdown Voltage gate-drain -30 -8 V
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
2
Page 3
Advance Product Information
TGF4350-EPU
FET Elements
Lg = 0.040 nH
Rg = 0.525 Ohms
Rgs = 14500 Ohms
Ri = 4.924 Ohms
Cgs = 0.364 pF
Cdg = 0.042 pF
Rdg = 146000 Ohms
Rs = 0.300 Ohms
Ls = 0.041 nH
Rds = 253.858 Ohms
Cds = 0.080 pF
Rd = 0.833 Ohms
Ld = 0.028 nH
VCCS Parameters
M = 0.091 S
A = 0
R1 = 1E19 Ohms
R2 = 1E19 Ohms
F = 0
T = 4.000 pS
G
Lg Rg
Rgs
Ri
Cgs
Cdg
Rdg
VCCS
R1 R2 Rds
Rs
Ls
Rd Ld
Cds
TGA4350EPU pHEMT Model (Vds = 3.0 V and 15mA at T = 25°C)
Device is mounted on a 20
mil high ledge. Source
inductance includes that of
source bondwires and ledge
TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
3
Page 4
Advance Product Information
TGF4350-EPU
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
4
Page 5
Advance Product Information
Process and Assembly Notes
This device should be attached using conductive epoxy only.
Contact factory for additional details as required.
Component placement and adhesive attachment assembly notes:
•=
vacuum pencils and/or vacuum collets preferred method of pick up
•=
avoidance of air bridges during placement
•=
force impact critical during auto placement
•=
organic attachment can be used in low-power applications
•= curing should be done in a convection oven; proper exhaust is a safety concern
•=
microwave or radiant curing should not be used because of differential heating
•=
coefficient of thermal expansion matching is critical
TGF4350-EPU
Interconnect process assembly notes:
•=
thermosonic ball bonding is the preferred interconnect technique
•= force, time, and ultrasonics are critical parameters
•=
aluminum wire should not be used
•=
discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire
•=
maximum stage temperature: 200ΓC
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
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