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Product Data Sheet
March 31, 2003
9.6 mm Discrete HFET TGF4260-SCC
Key Features and Performance
• 9600 µm x 0.5 µm HFET
• Nominal Pout of 37dBm at 6 GHz
• Nominal Gain of 9.5dB at 6 GHz
• Nominal PAE of 52% at 6 GHz
• Frequency Range: DC - 10.5 GHz
• Suitable for high reliability applications
• 0.6 x 2.4 x 0.1 mm (0.024 x 0.093 x 0.004 in)
Primary Applications
• Cellular Base Stations
• High-reliability space
• Military
Description
The TriQuint TGF4260-SCC is a single gate 9.6 mm discrete GaAs Heterostructure
Field Effect Transistor (HFET) designed for high efficiency power applications up to
10.5 GHz in Class A and Class AB operation.
Typical performance at 6 GHz is 37dBm power output, 9.5 dB Gain, and 52% PAE.
Bond pad and backside metallization are gold plated for compatibility with eutectic
alloy attach methods as well as thermocompression and thermosonic wire bonding
processes.
The TGF4260-SCC is readily assembled using automatic equipment.
TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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TABLE I
MAXIMUM RATINGS
Product Data Sheet
March 31, 2003
TGF4260-SCC
SYMBOL PARAMETER 1/
V
DS
V
GS
P
D
T
CH
T
STG
T
M
Drain to Source Voltage 12 V
Gate to Source Voltage Range 0 to -5.0 Volts
Power Dissipation 6.8 W 2/
Operating Channel Temperature
Storage Temperature
Mounting Temperature (30 seconds)
VALUE NOTES
150°C
-65 to 200°C
320°C
3/, 4/
1/ These ratings represent the maximum values for this device. Stresses beyond those listed
under “Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only, and functional operation of the device at these or any other conditions beyond
those indicated under “DC Probe Characteristics” is not implied. Exposure to maximum rated
conditions for extended periods may affect device reliability.
0
2/ When operated at this bias condition with a base plate temperature of 70
C, the MTTF life is
reduced from 1.7 E+12 to 3 E+9 hours.
3/ Junction temperature will directly affect the device Mean Time to Failure (MTTF). For
maximum life, it is recommended that junction temperatures be maintained at the
lowest possible levels
4/ These ratings apply to each individual FET
TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet
March 31, 2003
TABLE II
TGF4260-SCC
DC PROBE CHARACTERISTICS
= 25 °C, Nominal)
(T
A
Symbol Parameter Minimum Typical Maximum Unit Note
V
I
DSS
G
V
M
P
BGS
Saturated Drain Current -- 2352 -- mA 1/
Transconductance -- 1584 -- mS 1/
Pinch-off Voltage 1 1.85 3 V 2/
Breakdown Voltage
17 22 30 V 2/
Gate-Source
V
BGD
Breakdown Voltage
17 22 30 V 2/
Gate-Drain
1/ Total for eight FETS
2/ VP, V
BGS
, and V
are negative.
BGD
TABLE III
ELECTRICAL CHARACTERISTICS
= 25 °C, Nominal)
(T
A
Bias Conditions: Vd = 8.5 V, Id = 520 mA
Symbol Parameter Typical Unit
Pout Output Power 37 dBm
Gp Power Gain 9.5 dB
PAE Power Added Efficiency 52 %
TABLE IV
THERMAL INFORMATION*
Parameter Test Conditions T
R
Thermal
qJC
Resistance
(channel to backside
Vd = 8.5 V
= 520 mA
I
D
Pdiss = 6.8 W
CH
(oC)
101.64
R
qJC
(°C/W)
7.16 1.7 E+12
T
M
(HRS)
of carrier)
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil
CuMo Carrier at 70°C baseplate temperature. Worst case condition with no RF
applied, 100% of DC power is dissipated.
* The thermal information is a result of a detailed thermal model.
TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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1.4
1.2
1.0
Product Data Sheet
March 31, 2003
TGF4260-SCC
TYPICAL PERFORMANCE
(TA = 25 °C, Nominal)
Vg
-2.25 V
0.8
0.6
Drain Current (A)
0.4
0.2
0.0
1.25
1.2
1.15
-2.0 V
-1.75 V
-1.5 V
-1.25 V
-1.0 V
-0.75 V
012345678910
Drain Voltage (V)
Bias Conditions: F = 6 GHz, Vd = 8.5 V, Iq = 795 mA
1.1
1.05
1
0.95
Drain Current (A)
0.9
0.85
0.8
16 18 20 22 24 26 28 30
Input Power (dBm)
TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet
March 31, 2003
TGF4260-SCC
TYPICAL PERFORMANCE
Bias Conditions: F = 6 GHz, Vd = 8.5 V, Iq = 795 mA
55
50
45
40
35
30
25
PAE (%)
20
15
10
5
0
16 18 20 22 24 26 28 30
Input Power (dBm)
13
12
11
10
Gain (dB)
9
8
16 18 20 22 24 26 28 30
Input Power (dBm)
TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet
March 31, 2003
TGF4260-SCC
TYPICAL PERFORMANCE
Bias Conditions: F = 6 GHz, Vd = 8.5 V, Iq = 795 mA
39
37
35
33
31
Output Power (dBm)
29
27
16 18 20 22 24 26 28 30
Input Power (dBm)
Bias Conditions: F = 6 GHz, Vd = 8.5 V, Id = 520 mA
TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet
March 31, 2003
TGF4260-SCC
Unmatched Modeled S-Parameter Data for the
TGF4260-SCC
FREQ
(GHz)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10
10.5
11.0
11.5
12.0
12.5
13.0
13.5
14.0
S11
MAG
dB
-0.377 -142.378 16.279 105.604 -35.345 18.236 -2.334 -175.122
-0.368 -160.678 10.599 93.104 -35.031 9.671 -2.176 -176.556
-0.364 -167.064 7.118 86.611 -35.026 6.854 -2.126 -176.745
-0.360 -170.296 4.606 81.733 -35.090 5.622 -2.086 -176.594
-0.356 -172.250 2.630 77.536 -35.194 5.098 -2.044 -176.322
-0.351 -173.564 0.994 73.710 -35.320 5.000 -1.998 -176.008
-0.346 -174.511 -0.409 70.122 -35.473 5.217 -1.947 -175.688
-0.340 -175.232 -1.643 66.712 -35.645 5.705 -1.892 -175.382
-0.333 -175.802 -2.750 63.445 -35.831 6.448 -1.834 -175.099
-0.327 -176.269 -3.756 60.305 -36.027 7.442 -1.774 -174.846
-0.320 -176.662 -4.682 57.281 -36.233 8.690 -1.712 -174.627
-0.313 -177.000 -5.543 54.367 -36.444 10.198 -1.648 -174.441
-0.305 -177.297 -6.349 51.559 -36.648 11.968 -1.585 -174.290
-0.298 -177.562 -7.108 48.855 -36.845 14.002 -1.522 -174.172
-0.290 -177.803 -7.828 46.254 -37.028 16.295 -1.459 -174.084
-0.283 -178.025 -8.513 43.753 -37.190 18.833 -1.398 -174.026
-0.276 -178.231 -9.167 41.353 -37.323 21.596 -1.338 -173.995
-0.269 -178.424 -9.794 39.050 -37.419 24.556 -1.280 -173.988
-0.262 -178.607 -10.398 36.846 -37.484 27.673 -1.224 -174.004
-0.255 -178.782 -10.979 34.737 -37.503 30.902 -1.170 -174.039
-0.249 -178.949 -11.540 32.724 -37.477 34.192 -1.119 -174.091
-0.242 -179.110 -12.084 30.804 -37.406 37.493 -1.069 -174.160
-0.236 -179.266 -12.611 28.976 -37.291 40.755 -1.022 -174.241
-0.230 -179.417 -13.124 27.239 -37.140 43.932 -0.977 -174.335
-0.225 -179.564 -13.622 25.593 -36.948 46.987 -0.934 -174.438
-0.219 -179.708 -14.107 24.034 -36.719 49.893 -0.893 -174.551
-0.214 -179.848 -14.581 22.563 -36.472 52.628 -0.854 -174.670
-0.209 -179.986 -15.043 21.177 -36.199 55.182 -0.817 -174.796
ANG (°)
deg
S21
MAG
dB
ANG (°)
deg
S12
MAG
dB
ANG (°)
deg
S22
MAG
dB
ANG (°)
deg
TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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Mechanical Drawing
Product Data Sheet
March 31, 2003
TGF4260-SCC
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during
handing, assembly and test.
TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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Assembly Process Notes
Reflow process assembly notes:
· Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 °C for 30 sec
· An alloy station or conveyor furnace with reducing atmosphere should be used.
· No fluxes should be utilized.
· Coefficient of thermal expansion matching is critical for long-term reliability.
· Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
· Vacuum pencils and/or vacuum collets are the preferred method of pick up.
· Air bridges must be avoided during placement.
· The force impact is critical during auto placement.
· Organic attachment can be used in low-power applications.
· Curing should be done in a convection oven; proper exhaust is a safety concern.
· Microwave or radiant curing should not be used because of differential heating.
· Coefficient of thermal expansion matching is critical.
Product Data Sheet
March 31, 2003
TGF4260-SCC
Interconnect process assembly notes:
· Thermosonic ball bonding is the preferred interconnect technique.
· Force, time, and ultrasonics are critical parameters.
· Aluminum wire should not be used.
· Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire.
· Maximum stage temperature is 200 °C.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Note: Die are shipped in gel pack unless otherwise specified.
TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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