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Product Data Sheet
December 16, 2002
DC - 12 GHz Discrete HFET TGF4230-SCC
Key Features and Performance
• Nominal Pout of 28.5 dBm at 8.5 GHz
• Nominal Gain of 10.0 dB at 8.5 GHz
• Nominal PAE of 55 % at 8.5 GHz
• 1200 µm HFET
• 0.61 x 0.74 x 0.1 mm (0.024 x 0.029 x
0.004 in)
• Bias at 8 Volts, 96 mA
Primary Applications
• Cellular Base Stations
• High dynamic-range LNAs
• Military and Space
Description
The TriQuint TGF4230-SCC is a single gate 1.2 mm Discrete GaAs Heterostructure Field
Effect Transistor (HFET) designed for high-efficiency power applications up to 12 GHz in
Class A and Class AB operation.
Bond-pad and backside metalization is gold plated for compatibility with eutectic alloy
attach methods as well as thermocompression and thermosonic wire-bonding processes.
The TGF4230-SCC is readily assembled using automatic equipment.
For an Application Note on the use of HFETs, refer to the TriQuint website for the
Millimeter Wave Division.
TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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TABLE I
MAXIMUM RATINGS
Product Data Sheet
December 16, 2002
TGF4230-SCC
SYMBOL PARAMETER 1/
V
DS
V
GS
P
D
T
CH
T
STG
T
M
Drain to Source Voltage 12 V
Gate to Source Voltage Range 0 to -5.0 Volts
Power Dissipation See Thermal Data
Operating Channel Temperature
Storage Temperature
Mounting Temperature (30 seconds)
VALUE NOTES
150°C
-65 to 150°C
320°C
2/, 3/
1/ These ratings represent the maximum values for this device. Stresses beyond those listed
under “Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only, and functional operation of the device at these or any other conditions beyond
those indicated under “DC Probe Characteristics” and “Electrical Characteristics” is not
implied. Exposure to maximum rated conditions for extended periods may affect device
reliability.
2/ Junction temperature will directly affect the device Mean Time to Failure (MTTF). For
maximum life, it is recommended that junction temperatures be maintained at the
lowest possible levels.
3/ These ratings apply to each individual FET
TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet
December 16, 2002
TGF4230-SCC
TABLE II
DC PROBE CHARACTERISTICS
= 25 °C, Nominal)
(T
A
Symbol Parameter Minimum Typical Maximum Unit Note
V
V
I
DSS
G
V
M
P
BGS
BGD
Saturated Drain Current -- 294 -- mA 1/
Transconductance -- 198 -- mS 1/
Pinch-off Voltage 1 1.85 3 V 2/
Breakdown Voltage
17 22 30 V 2/
Gate-Source
Breakdown Voltage
17 22 30 V 2/
Gate-Drain
1/ Total for two FETS
2/ VP, V
, and V
BGS
Bias Conditions: Vd = 8 V, Id = 50 mA +/- 10%, @ 8.5 GHz
are negative.
BGD
ELECTRICAL CHARACTERISTICS
TABLE III
(T
= 25 °C, N om in a l)
A
Symbol Parameter Typical Unit
Pout Output Power 28.5 dBm
Gp Power Gain 10 dB
PAE Power Added Efficiency 55 %
Note: The recommended bias current for HFETs is 80 mA/mm. For this
1.2 mm HFET IQ is 96 mA.
TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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EXAMPLE OF
DC I-V CURVES
Product Data Sheet
December 16, 2002
TGF4230-SCC
TYPICAL PERFORMANCE
OUTPUT POWER VS.
INPUT POWER
POWER ADDED
EFFICIENCY VS.
INPUT POWER
TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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GAIN VS.
INPUT POWER
Product Data Sheet
December 16, 2002
TGF4230-SCC
TYPICAL PERFORMANCE
DRAIN CURRENT
VS. INPUT POWER
*
TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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PREDICTED CHANNEL
TEMPERATURE VS.
BASE TEMPERATURE
at 0.51 W and 1.02 W
dissipated power
Product Data Sheet
December 16, 2002
TGF4230-SCC
THERMAL INFORMATION
HFET CHANNEL
TEMPERATURE VS.
MEDIAN LIFE
TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet
December 16, 2002
TGF4230-SCC
MODELED SPARAMETERS
Frequency S
(GHz) MAG ANG(°) MAG ANG(°) MAG ANG(°) MAG ANG(° )
S 21 S 12 S
11
22
0.5 0.985 -29.88 8.095 161.49 0.021 72.66 0.343 -22.22
1.0 0.959 -56.20 7.297 145.18 0.038 58.80 0.328 -41.75
1.5 0.931 -77.47 6.368 131.86 0.050 47.65 0.312 -57.46
2.0 0.908 -94.02 5.512 121.22 0.057 39.12 0.301 -69.57
2.5 0.891 -106.82 4.791 112.62 0.062 32.60 0.295 -78.80
3.0 0.880 -116.82 4.202 105.49 0.065 27.55 0.294 -85.89
3.5 0.871 -124.76 3.723 99.42 0.067 23.56 0.297 -91.41
4.0 0.865 -131.19 3.330 94.11 0.068 20.34 0.302 -95.80
4.5 0.861 -136.48 3.004 89.37 0.069 17.70 0.309 -99.38
5.0 0.858 -140.92 2.732 85.06 0.069 15.51 0.319 -102.37
5.5 0.856 -144.69 2.501 81.09 0.069 13.67 0.329 -104.94
6.0 0.855 -147.94 2.304 77.39 0.068 12.12 0.340 -107.18
6.5 0.854 -150.78 2.133 73.90 0.068 10.82 0.352 -109.19
7.0 0.854 -153.29 1.984 70.59 0.067 9.72 0.364 -111.03
7.5 0.854 -155.53 1.852 67.43 0.066 8.80 0.377 -112.73
8.0 0.855 -157.54 1.736 64.40 0.065 8.05 0.390 -114.32
8.5 0.855 -159.37 1.632 61.49 0.065 7.45 0.404 -115.84
9.0 0.856 -161.04 1.539 58.67 0.064 7.00 0.417 -117.29
9.5 0.857 -162.58 1.455 55.95 0.063 6.68 0.430 -118.68
10.0 0.858 -164.01 1.378 53.30 0.061 6.49 0.444 -120.03
10.5 0.859 -165.34 1.308 50.73 0.060 6.43 0.457 -121.35
11.0 0.860 -166.58 1.244 48.23 0.059 6.51 0.470 -122.63
11.5 0.862 -167.76 1.186 45.79 0.058 6.71 0.483 -123.89
12.0 0.863 -168.87 1.131 43.41 0.057 7.05 0.496 -125.11
12.5 0.864 -169.93 1.081 41.09 0.056 7.52 0.509 -126.32
13.0 0.866 -170.94 1.034 38.83 0.055 8.12 0.521 -127.51
13.5 0.867 -171.91 0.991 36.62 0.053 8.86 0.534 -128.68
14.0 0.869 -172.84 0.950 34.46 0.052 9.74 0.546 -129.82
V
= 8.0 V and 30% I
DS
at T = 25°C
DSS
FET Elements
L
= 0.0421nH
G
R
= 0.43 W
G
= 81700 W
R
GS
R
= 1.21W
1
C
= 1.21 pF
GS
C
= 0.1004 pF
DG
R
= 204000 W
DG
R
= 0.4 W
S
= 0.015 nH
L
S
= 98.01 W
R
DS
= 0.25325 pF
C
DS
= 0.66 W
R
D
L
= 0.022 nH
D
VCCS Parameters
M
= 132.9 mS
A = 0
= 1E19 W
R1
R2 = 1E19 W
F = 0
T = 5.49 pS
TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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Mechanical Drawing
Product Data Sheet
December 16, 2002
TGF4230-SCC
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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Assembly Process Notes
Reflow process assembly notes:
· Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 °C for 30 sec
· An alloy station or conveyor furnace with reducing atmosphere should be used.
· No fluxes should be utilized.
· Coefficient of thermal expansion matching is critical for long-term reliability.
· Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
· Vacuum pencils and/or vacuum collets are the preferred method of pick up.
· Air bridges must be avoided during placement.
· The force impact is critical during auto placement.
· Organic attachment can be used in low-power applications.
· Curing should be done in a convection oven; proper exhaust is a safety concern.
· Microwave or radiant curing should not be used because of differential heating.
· Coefficient of thermal expansion matching is critical.
Product Data Sheet
December 16, 2002
TGF4230-SCC
Interconnect process assembly notes:
· Thermosonic ball bonding is the preferred interconnect technique.
· Force, time, and ultrasonics are critical parameters.
· Aluminum wire should not be used.
· Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire.
· Maximum stage temperature is 200 °C.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Note: Die are shipped in gel pack unless otherwise specified.
TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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