Datasheet tgf2961-sd Datasheet

1 Watt DC-4 GHz Packaged HFET

•

IF & LO Buffer Applications

15

900 MHz Application Board

Performance

Bias conditions: Vd = 8 V, Idq = 200 mA, Vg = -1.0 V Typical

20

20

TGF2961-SD

Key Features

• Frequency Range: DC-4 GHz

Nominal 900 MHz Application Board Performance:

• TOI: 44 dBm

• 31 dBm Psat, 30 dBm P1dB

• Gain: 18 dB

• Input Return Loss: -15 dB

• Output Return Loss: -7 dB

• Bias: Vd = 8 V, Id = 200 mA, Vg = -1.0 V

(Typical)

• Package Dimensions: 4.5 x 4 x 1.5 mm

Primary Applications

• Cellular Base Stations

• WiMAX

• Wireless Infrastructure

15

Gain (dB)

10

5

0.6 0.7 0.8 0.9 1 1.1 1.2

Frequency (GHz)

31

30

Psat (dBm)

29

0.86

0.87

0.88

0.89

0.9

0.91

Freq (GHz)

Gain

IRL

ORL

0.92

0.93

0.94

10

5

0

-5

IRL and ORL (dB)

-10

-15

-20

0.95

0.96

0.97

• RFID

Product Description

The TGF2961-SD is a high performance 1-watt
Heterojunction GaAs Field Effect Transistor
(HFET) housed in a low cost SOT89 surface
mount package.

The device’s ideal operating point is at a drain bias
of 8 V and 200 mA. At this bias at 900 MHz when
matched into 50 ohms using external components,
this device is capable of 18 dB of gain, 30 dBm of
saturated output power, and 44 dBm of output IP3

Evaluation boards at 900 MHz, 1900 MHz and
2100 MHz available on request.

RoHS and Lead-Free compliant

Datasheet subject to change without notice.

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September 2010 © Rev B

1

TGF2961-SD

maximum power dissipation listed in Table IV.

maximum power dissipation listed in Table IV.

Table I

Absolute Maximum Ratings 1/

Symbol Parameter Value Notes

Vd-Vg Drain to Gate Voltage 17 V

Vd Drain Voltage 9 V 2/

Vg Gate Voltage Range -5 to 0 V

Id Drain Current 780 mA 2/

Ig Gate Current Range -2.4 to 17.8 mA

Pin Input Continuous Wave Power 29 dBm 2/

Tchannel Channel Temperature 200 °C

1/ These ratings represent the maximum operable values for this device. Stresses beyond those listed

under “Absolute Maximum Ratings” may cause permanent damage to the device and / or affect
device lifetime. These are stress ratings only, and functional operation of the device at these
conditions is not implied.

2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed the

Table II

Recommended Operating Conditions

Symbol Parameter 1/ Typical Value

Vd Drain Voltage 8 V

Idq Drain Current 200 mA

Id Drain Current at Psat 260 mA

Vg Gate Voltage -1.0 V

1/ See assembly diagram for bias instructions.

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TGF2961-SD

Table III

Electrical Performance

Test conditions unless otherwise specified: fin= 900 MHz, 25°C; Vd = 8V, Idq = 200

mA, Vg = -1.0 Typical; See test circuit for 900 MHz operation

SYMBOL PARAMETER Min Nom UNIT

Gain Small Signal Gain 19 20 dB

P1dB Output Power @ 1dB Compression 29.0 30.5 dBm

OTOI 3rdOrder Output Intercept Point 1/ 39.5 42.5 dBm

1/ 900 and 910 MHz, 18 dBm output power per tone

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3

TGF2961-SD

P1dB

Output Power @ 1dB

900 MHz

30.5

dBm

1/

Table IIIa

RF Characterization Table

Bias: Vd = 8 V, Idq = 200 mA, Vg = -1.0 V, typical

SYMBOL PARAMETER TEST CONDITIONS NOMINAL UNITS NOTES

Gain Small Signal Gain 900 MHz

1900 MHz
2100 MHz

IRL Input Return Loss 900 MHz

1900 MHz
2100 MHz

ORL Output Return Loss 900 MHz

1900 MHz
2100 MHz

Psat Saturated Output

Power

Compression

TOI Output TOI 900 MHz

NF Noise Figure 900 MHz

900 MHz
1900 MHz
2100 MHz

1900 MHz
2100 MHz

1900 MHz
2100 MHz

1900 MHz
2100 MHz

20
15
15

-15

-15

-15

-6

-6

-6

31
31
31

30
30

42.5

42.5

42.5

3.3

4.3

4.3

dB 1/

2/
3/

dB 1/

2/
3/

dB 1/

2/
3/

dBm 1/

2/
3/

2/
3/

dBm 1/

2/
3/

dB 1/

2/
3/

1/ Using 900 MHz Application Board.

2/ Using 1900 MHz Application Board

3/ Using 2100 MHz Application Board

4

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TGF2961-SD

Table IV

Power Dissipation and Thermal Properties

Parameter Test Conditions Value Notes

Maximum Power Dissipation Tbaseplate = 70°C Pd = 2.7 W

Tchannel = 175°C
Tm = 8.7E+06 Hrs

Thermal Resistance, θjc Vd = 8 V

Id = 200 mA
Pd = 1.6 W
Tbaseplate = 85°C

Thermal Resistance, θjc

Under RF Drive

Mounting Temperature See ‘Typical Solder Reflow Profiles’ Table

Storage Temperature -65 to 150°C

1/ For a median life of 8.7E6 hours, Power Dissipation is limited to

Pd(max) = (175°C – Tbase°C) / θjc

2/ Channel operating temperature will directly affect the device median time to failure (MTTF). For

maximum life, it is recommended that channel temperatures be maintained at the lowest possible
levels.

Vd = 8 V
Id = 260 mA
Pout = 30 dBm
Pd = 1.08 W
Tbaseplate = 85°C

θjc = 39 (°C/W)

Tchannel = 147°C

Tm = 1.86E+08 Hrs

θjc = 39 (°C/W)

Tchannel = 127°C

Tm = 2.27E+09 Hrs

1/ 2/

Power De-Rating Curve

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TGF2961-SD

Gmax, Max Stable Gain, K factor

Bias conditions: Vd = 8 V, Idq = 200 mA, Vg = -1.0 V Typical

Gmax and MSG - dB

35

30

25

Gmax
Max Stable Gain
K factor

20

15

10

5

0

0 1 2 3 4 5 6 7

Freq (GHz)

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

K factor

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TGF2961-SD

Frequency (GHz)

Measured Data 900 MHz Application Board

Bias conditions: Vd = 8 V, Id = 200 mA, Vg = -1.0 V Typical

25

20

Gain (dB)

15

10

0.6 0.7 0.8 0.9 1 1.1 1.2

0

-5

-10

-15

-20

IRL and ORL (dB)

-25

IRL ORL

-30

0.6 0.7 0.8 0.9 1 1.1 1.2

Frequency (GHz)

7

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TGF2961-SD

Freq (GHz)

Measured Data 900 MHz Application Board

Bias conditions: Vd = 8 V, Idq = 200 mA, Vg = -1.0 V Typical

31

30

29

P1dB (dBm)

28

-40 deg C

25 deg C

85 deg C

0.86

0.88

0.90

0.92

0.94

32

31

Psat (dBm)

30

-40 deg C

+25 deg C

+85 deg C

29

0.82

0.84

0.86

0.88

0.90

0.92

0.94

0.96

0.98

1.00

Freq (GHz)

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Measured Data 900 MHz Application Board

Freq(GHz)

Bias conditions: Vd = 8 V, Idq = 200 mA, Vg = -1.0 V Typical

46

45

OIP3(dBm)

44

43

TGF2961-SD

0.86

0.87

0.88

0.9

0.89

0.91

0.92

0.93

0.94

0.95

0.96

0.97

9

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TGF2961-SD

Measured Data 1900 MHz Application Board

Bias conditions: Vd = 8 V, Idq = 200 mA, Vg = -1.0 V Typical

20

15

Gain (dB)

10

5

1.7 1.8 1.9 2 2.1 2.2 2.3

Frequency (GHz)

0

-5

-10

-15

-20

IRL ORL

IRL and ORL (dB)

-25

-30

1.7 1.8 1.9 2 2.1 2.2 2.3

Frequency (GHz)

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September 2010 © Rev B

10

TGF2961-SD

Freq (GHz)

Measured Data 1900 MHz Application Board

Bias conditions: Vd = 8 V, Idq = 200 mA, Vg = -1.0 V Typical

31

30

29

P1dB (dBm)

-40 deg C

25 deg C

85 deg C

28

1.92

1.93

1.94

1.95

1.96

1.97

1.98

1.99

2.00

32

31

Psat (dBm)

30

-40 deg C

+25 deg C

+85 deg C

29

1.88

1.90

1.92

1.94

1.96

1.98

2.00

2.02

2.04

Freq (GHz)

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TGF2961-SD

Freq(GHz)

Measured Data 1900 MHz Application Board

Bias conditions: Vd = 8 V, Idq = 200 mA, Vg = -1.0 V Typical

46

45

OIP3(dBm)

44

43

1.92 1.93 1.94 1.95 1.96 1.97 1.98 1.99 2.00

12

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TGF2961-SD

Frequency (GHz)

Measured Data 2100 MHz Application Board

Bias conditions: Vd = 8 V, Idq = 200 mA, Vg = -1.0 V Typical

20

15

Gain (dB)

10

5

1.9 2 2.1 2.2 2.3 2.4 2.5

0

-5

-10

-15

-20

IRL and ORL (dB)

-25

-30

1.9 2 2.1 2.2 2.3 2.4 2.5

IRL

ORL

Frequency (GHz)

13

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September 2010 © Rev B

TGF2961-SD

Freq (GHz)

Measured Data 2100 MHz Application Board

Bias conditions: Vd = 8 V, Id = 200 mA, Vg = -1.0 V Typical

31

30

29

P1dB (dBm)

28

-40 deg C

25 deg C

85 deg C

2.06

2.08

2.10

2.12

2.14

2.16

2.18

2.20

2.22

32

31

Psat (dBm)

30

-40 deg C

+25 deg C

+85 deg C

29

2.06

2.08

2.10

2.12

2.14

2.16

2.18

2.20

2.22

Freq (GHz)

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TGF2961-SD

Freq(GHz)

Measured Data 2100 MHz Application Board

Bias conditions: Vd = 8 V, Idq = 200 mA, Vg = -1.0 V Typical

46

45

OIP3 (dBm)

44

43

2.10 2.11 2.12 2.13 2.14 2.15 2.16 2.17 2.18

15

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Electrical Schematic

2

1

2

3

Pin Signal

1 RF In (Gate)

2 Gnd (Source)

TGF2961-SD

Bias-up Procedure

 Vg set to -2.5 V

 Vd set to +8 V

 Adjust Vg more positive until Idq is 200 mA. This will be ~ Vg = -1.0 V

 Apply RF signal to input

Bias-down Procedure

 Turn off RF signal at input

 Reduce Vg to -2.5V. Ensure Id ~ 0 mA

 Turn Vd to 0 V

 Turn Vg to 0 V

3 RF Out (Drain)

Bias Procedures

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16

TGF2961-SD

Millimeters

Mechanical Drawing

B

K

2

D

C

1

2

J

I

3

F

H

J

G

3

A

2

1

E

Dim

A 1.40 1.60

B 4.40 4.60

C 2.29 2.60

D 3.94 4.25

E 3.00 Center-Center

F 1.50 Center-Center

Min Max

G 0.35 0.44

H 0.89 1.20

I 0.44 0.56

J 0.36 0.48

K 1.50 1.83

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.

17

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Evaluation Board

TGF2961-SD

RF IN

C3

L2

Evaluation Board

R1

Gnd

Vg

C6

C8

C10

R2

L1

C1

D /

λ

Vd

C5

C9

C7

Q1

C2

L3

RF OUT

C4

Evaluation Board Schematic

Vg

C8

C6

Ω

C3

L1

RF IN

Z = 50

0

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.

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C10

C1

Vd

R1

L2

R2

C5

C7 C9

Q1

September 2010 © Rev B

L3

D /

λ

C4

C2

RF OUT

Z = 50

0

Ω

18

L2, L3

50 nH

0805 Inductor

Evaluation Board Bill of Materials

L2, L3

50 nH

0805 Inductor

TGF2961-SD

Ref Des

L1 5.6 nH 1.2 nH 1.2 nH 0603 ACCU-L AVX Inductor

C1 8.2 pF 1.2 pF 0.9 pF 0603 ACCU-P AVX Capacitor

C2 1.8 pF 1.2 pF 1.2 pF 0603 ACCU-P AVX Capacitor

D 18.8 mm 8.0 mm 5.2 mm Physical Location for C2

λλλλ

C3,C4 150 pF 0603 Capacitor

C5, C6 0.1 µµµµF 0603 Capacitor

C7, C8 0.01 µµµµF 0603 Capacitor

C9, C10 1000 pF 0603 Capacitor

R1 50 Ohm 0805 1/8 Watt Resistor

R2 3 Ohm 0805 1/8 Watt Resistor

Q1 -- TriQuint TGF2961-SD Packaged FET

[email protected]

GHz

Value for Freq (MHz)

900 1900 2100

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GHz

[email protected]

GHz

Description

50 Ohm Transmission Line Length D

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.

(PCB) -- 28 mil thick GETEK

19

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Recommended Assembly Diagram

2.6 mm Ø CLEARANCE HOLE

TGF2961-SD

FOR 2-56 SOCKET HEAD CAP SCREW (2/)

4.6 mm Ø SOLDERMASK

KEEPOUT FOR 2-56 LOCKWASHER (4/)

1 2 3

7.6 X 7.6 mm COPPER AREA (3/)

ARRAY OF VIAS (1/)

SOT-89 PACKAGE OUTLINE

Assembly Notes

1/ The lowest possible thermal and electrical resistance for Pin 2 is critical for optimal performance. The array
of vias under Pin 2 should be as small and as dense as the PC board fabrication permits. 0.30 mm diameter
vias on 0.60 mm center to center spacing is recommended.

2/ Mounting screws in the vicinity of the package improve heat transfer to the chassis or to a heat spreader
located on the backside of the PC board. Shown are clearance holes and solder mask keepout zone for a 2­56 socket head cap screw. Use of a split lockwasher and proper torque on the screw will prevent
compression damage to the PC board.

3/ Use of 1 oz copper (min) in the PC board construction is recommended.

4/ For lowest thermal resistance, solder mask must be removed where the copper traces on the PC board
contact the heat spreader. In this example, this would be a) front and backsides of the PC board around the
2-56 screw and b) front of the PC board around package pin 2.

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.

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September 2010 © Rev B

20

TGF2961-SD

Ordering Information

Activation Time and

60 – 120 sec @ 140 – 160

°C60 – 180 sec @ 150 – 20 0

°

C

Recommended Surface Mount Package Assembly

Proper ESD precautions must be followed while handling packages.

Clean the board with acetone. Rinse with alcohol. Allow the circuit to fully dry.

TriQuint recommends using a conductive solder paste for attachment. Follow solder paste and reflow oven
vendors’ recommendations when developing a solder reflow profile. Typical solder reflow profiles are listed
in the table below.

Hand soldering is not recommended. Solder paste can be applied using a stencil printer or dot placement.
The volume of solder paste depends on PCB and component layout and should be well controlled to
ensure consistent mechanical and electrical performance.

Clean the assembly with alcohol.

Typical Solder Reflow Profiles

Reflow Profile SnPb Pb Free

Ramp-up R ate

Temperature

Time above Melting Po int 60 – 150 sec 60 – 150 sec

Max Peak Temperature

Time w ithin 5 °C of Peak

Temperature

Ramp-do wn Rate

3 °C/sec 3 °C/sec

240 °C 260 °C

10 – 20 sec 10 – 20 sec

4 – 6 °C/sec 4 – 6 °C/se c

Part Package Style

TGF2961-SD, TAPE AND REEL SOT-89, TAPE AND REEL

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September 2010 © Rev B