Datasheet tgf2960-sd Datasheet

0.5 Watt DC-5 GHz Packaged HFET

•

IF & LO Buffer Applications

900 MHz Application Board

Performance

Bias conditions: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V Typical

20

15

Gain (dB)

10

5

0.6 0.7 0.8 0.9 1.0 1.1 1.2

Frequency (GHz)

29

28

Psat (dBm)

27

Gain
IRL
ORL

30
25
20
15
10
5
0

-5

-10

-15

-20

-25

-30

TGF2960-SD

Key Features

• Frequency Range: DC-5 GHz

Nominal 900 MHz Application Board Performance:

• TOI: 40 dBm

• 28 dBm Psat, 27 dBm P1dB

• Gain: 19 dB

• Input Return Loss: -10 dB

• Output Return Loss: -5 dB

• Bias: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V

(Typical)

• Package Dimensions: 4.5 x 4 x 1.5 mm

Primary Applications

• Cellular Base Stations

• WiMAX

• Wireless Infrastructure

• RFID

Product Description

IRL and ORL (dB)

The TGF2960-SD is a high performance 1/2-watt
Heterojunction GaAs Field Effect Transistor
(HFET) housed in a low cost SOT89 surface
mount package.

The device’s ideal operating point is at a drain bias
of 8 V and 100 mA. At this bias at 900 MHz when
matched into 50 ohms using external components,
this device is capable of 19 dB of gain, 28 dBm of
saturated output power, and 40 dBm of output IP3.

Evaluation boards at 900 MHz, 1900 MHz and
2100 MHz available on request.

RoHS and Lead-Free compliant.

26

0.86

0.88

0.90

Frequency (GHz)

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0.92

0.94

0.96

0.98

Datasheet subject to change without notice.

July 2010 © Rev A

1

TGF2960-SD

2/

Combinations of supply voltage, supply current, input power, and output power shall not exceed the

Table I

Absolute Maximum Ratings 1/

Symbol Parameter Value Notes

Vd-Vg Drain to Gate Voltage 17 V

Vd Drain Voltage 9 V 2/

Vg Gate Voltage Range -5 to 0 V

Id Drain Current 390 mA 2/

Ig Gate Current Range -2.4 to 17.8 mA

Pin Input Continuous Wave Power 26 dBm 2/

1/ These ratings represent the maximum operable values for this device. Stresses beyond those listed

under “Absolute Maximum Ratings” may cause permanent damage to the device and / or affect
device lifetime. These are stress ratings only, and functional operation of the device at these
conditions is not implied.

maximum power dissipation listed in Table IV.

Table II

Recommended Operating Conditions

Symbol Parameter 1/ Typical Value

Vd Drain Voltage 8 V

Idq Drain Current 100 mA

Id Drain Current at Psat 130 mA

Vg Gate Voltage -1.0 V

1/ See assembly diagram for bias instructions.

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TGF2960-SD

Table III

Electrical Performance

Test conditions unless otherwise specified: fin= 900 MHz, 25°C; Vd = 8V, Idq = 100

mA, Vg = -1.0 Typical; See test circuit for 900 MHz operation

SYMBOL PARAMETER MIn Nom UNIT

Gain Small Signal Gain 18 19 dB

P1dB Output Power @ 1dB Compression 25.5 27 dBm

OTOI 3rdOrder Output Intercept Point 1/ 37 40 dBm

1/ 900 and 910 MHz, 16 dBm output power per tone

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3

TGF2960-SD

P1dB

Output Power @ 1dB

900 MHz

27

dBm

1/

Table IIIa

RF Characterization Table

Bias: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V, typical

SYMBOL PARAMETER TEST CONDITIONS NOMINAL UNITS NOTES

Gain Small Signal Gain 900 MHz

1900 MHz
2100 MHz

IRL Input Return Loss 900 MHz

1900 MHz
2100 MHz

ORL Output Return Loss 900 MHz

1900 MHz
2100 MHz

Psat Saturated Output

Power

Compression

TOI Output TOI 900 MHz

NF Noise Figure 900 MHz

900 MHz
1900 MHz
2100 MHz

1900 MHz
2100 MHz

1900 MHz
2100 MHz

1900 MHz
2100 MHz

19
16
15

-10

-10

-10

-5

-6

-6

28
28
28

27
27

40
39
39

3.7

4.3

4.3

dB 1/

2/
3/

dB 1/

2/
3/

dB 1/

2/
3/

dBm 1/

2/
3/

2/
3/

dBm 1/

4/
5/

dB 1/

2/
3/

1/ Using 900 MHz Application Board

2/ Using 1900 MHz Application Board tuned for maximum output power

3/ Using 2100 MHz Application Board tuned for maximum output power

4/ Using 1900 MHz Application Board tuned for maximum TOI (reduces output power reduced by 1 dB)

5/ Using 2100 MHz Application Board tuned for maximum TOI (reduces output power reduced by 1 dB)

4

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TGF2960-SD

Table IV

Power Dissipation and Thermal Properties

Parameter Test Conditions Value

Maximum Power Dissipation Tbaseplate = 70°C Pd = 1.37 W

Tchannel = 175°C

Tm = 8.77E+06 Hrs

Thermal Resistance, θjc Vd = 8 V

Id = 100 mA
Pd = 0.8 W
Tbaseplate = 85°C

Thermal Resistance, θjc

at Psat

Mounting Temperature See ‘Typical Solder Reflow Profiles’ Table

Storage Temperature -65 to 150°C

Vd = 8 V
Id =130 mA
Pout = 27 dBm
Pd = 0.54 W
Tbaseplate = 85°C

θjc = 77 (°C/W)

Tchannel = 146.5°C

Tm = 2.06E+08 Hrs

θjc = 77 (°C/W)

Tchannel = 126°C

Tm = 2.48E+09 Hrs

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5

TGF2960-SD

5

0.5

Gmax, Max Stable Gain, K factor

Bias conditions: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V Typical

Gmax and MSG - dB

35

30

25

Gmax
Max Stable Gain
K factor

20

15

10

0

0 1 2 3 4 5 6 7

Frequency (GHz)

3.5

3.0

2.5

2.0

1.5

1.0

0.0

K factor

6

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TGF2960-SD

Frequency (GHz)

Measured Data 900 MHz Application Board

Bias conditions: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V Typical

25

20

Gain (dB)

15

10

0.6 0.7 0.8 0.9 1.0 1.1 1.2

0

-5

-10

-15

-20

IRL and ORL (dB)

IRL ORL

-25

-30

0.6 0.7 0.8 0.9 1.0 1.1 1.2

Frequency (GHz)

7

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TGF2960-SD

Frequency (GHz)

Measured Data 900 MHz Application Board

Bias conditions: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V Typical

28

27

26

P1dB (dBm)

-40 deg C

25 deg C
85 deg C

25

0.86

0.88

0.90

0.92

0.94

0.96

0.98

29

28

Psat (dBm)

27

-40 deg C

25 deg C

85 deg C

26

0.86

0.88

0.90

0.92

0.94

0.96

0.98

Frequency (GHz)

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July 2010 © Rev A

8

TGF2960-SD

Frequency (GHz)

Measured Data 900 MHz Application Board

Bias conditions: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V Typical

42

41

OIP3 (dBm)

40

39

0.82

0.84

0.86

0.88

0.90

0.92

0.94

0.96

0.98

1.00

1.02

9

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July 2010 © Rev A

TGF2960-SD

Frequency (GHz)

Measured Data 1900 MHz Application Board

Bias conditions: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V Typical

20

15

Gain (dB)

10

5

1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4

0

-5

-10

-15

-20

IRL and ORL (dB)

IRL ORL

-25

-30

1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4

Frequency (GHz)

10

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July 2010 © Rev A

TGF2960-SD

Frequency (GHz)

Measured Data 1900 MHz Application Board

Bias conditions: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V Typical

28

27

26

25

P1dB (dBm)

-40 deg C

24

25 deg C

85 deg C

23

1.88

1.90

1.92

1.94

1.96

1.98

2.00

2.02

2.04

29

28

Psat (dBm)

27

-40 deg C

25 deg C

85 deg C

26

1.88

1.90

1.92

1.94

1.96

1.98

2.00

2.02

2.04

Frequency (GHz)

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July 2010 © Rev A

11

TGF2960-SD

Frequency (GHz)

Measured Data 1900 MHz Application Board

Bias conditions: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V Typical

41

40

(Tuned for Max IP3, P1dB reduced by 1 dB)

OIP3 (dBm)

39

38

1.92

1.94

1.96

1.98

2.00

40

39

OIP3 (dBm)

38

(Tuned for Max Pout)

37

1.92

1.94

1.96

1.98

2.00

Frequency (GHz)

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July 2010 © Rev A

12

TGF2960-SD

Frequency (GHz)

Measured Data 2100 MHz Application Board

Bias conditions: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V Typical

20

15

Gain (dB)

10

5

1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4

0

-5

-10

-15

-20

IRL and ORL (dB)

IRL ORL

-25

-30

1.7 1.8 1.9 2 2.1 2.2 2.3 2.4

Frequency (GHz)

13

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July 2010 © Rev A

TGF2960-SD

Frequency (GHz)

Measured Data 2100 MHz Application Board

Bias conditions: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V Typical

29

28

27

26

25

P1dB (dBm)

-40 deg C

24

23

25 deg C
85 deg C

2.06

2.08

2.10

2.12

2.14

2.16

2.18

2.20

2.22

30

29

28

27

Psat (dBm)

26

-40 deg C

25

25 deg C

85 deg C

24

2.06

2.08

2.10

2.12

2.14

2.16

2.18

2.20

2.22

Frequency (GHz)

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July 2010 © Rev A

14

TGF2960-SD

Frequency (GHz)

Measured Data 2100 MHz Application Board

Bias conditions: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V Typical

40

39

OIP3 (dBm)

38

(Tuned for Max IP3, P1dB reduced by 1 dB)

37

2.07

2.09

2.11

2.13

2.15

2.17

2.19

2.21

40

39

OIP3 (dBm)

38

(Tuned for Max Pout)

37

2.07

2.09

2.11

2.13

2.15

2.17

2.19

2.21

Frequency (GHz)

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Electrical Schematic

2

1

2

3

Pin Signal

1 RF In (Gate)

2 Gnd (Source)

TGF2960-SD

Bias-up Procedure

 Vg set to -2.5 V

 Vd set to +8 V

 Adjust Vg more positive until Idq is 100 mA. This will be ~ Vg = -1.0 V

 Apply RF signal to input

Bias-down Procedure

 Turn off RF signal at input

 Reduce Vg to -2.5V. Ensure Id ~ 0 mA

 Turn Vd to 0 V

 Turn Vg to 0 V

3 RF Out (Drain)

Bias Procedures

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July 2010 © Rev A

16

TGF2960-SD

Millimeters

Mechanical Drawing

B

K

2

D

C

1

2

J

I

3

F

H

J

G

3

A

2

1

E

Dim

A 1.40 1.60

B 4.40 4.60

C 2.29 2.60

D 3.94 4.25

E 3.00 Center-Center

F 1.50 Center-Center

Min Max

G 0.35 0.44

H 0.89 1.20

I 0.44 0.56

J 0.36 0.48

K 1.50 1.83

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.

17

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Evaluation Board

TGF2960-SD

RF IN

C3

L2

R1

Gnd

Vg

C6

C8

C10

Q1

Vd

C5

C9

D / λ(900 MHz)

R2

L1

C1

D /

Evaluation Board Schematic

L3

C7

λ

(1900 & 2100 MHz)

C2

RF OUT

C4

L4

(900 MHz Only)

Vg

C6

C8

Vd

C10 C5

C7 C9

R1

L3

Ω

C3

L1

C1

RF IN

Z = 50

0

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.

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L2

R2

L4

Q1

(900

MHz

Only)

July 2010 © Rev A

D /

λ

C4

C2

RF OUT

Z = 50

0

Ω

18

Evaluation Board Bill of Materials

λλλλ

TGF2960-SD

Ref Des

L1 4.7 nH 1.2 nH 1.5 nH 0603 ACCU-L AVX Inductor

C1 22 pF 1.2 pF 1.2 pF 0603 ACCU-P AVX Capacitor

C2 0.7 pF 0.6 pF 0.6 pF 0603 ACCU-P AVX Capacitor

D 18.8 mm 14.2 mm 5.8 mm Physical Location for C2

D 18.8 mm 14.2 mm 5.8 mm

λλλλ

D 18.8 mm 17.2 mm 9.6 mm

L2, L3 50 nH 0805 Inductor

L4 1.2 nH -- -- 0603 ACCU-L AVX Inductor

C3,C4 150 pF 0603 Capacitor

[email protected]

GHz

[email protected] [email protected] [email protected] 50 Ohm Transmission Line Length D

GHz GHz GHz for maximum TOI

Value for Freq (MHz)

900 1900 2100

[email protected]

GHz

[email protected]

GHz

Description

Physical Location for C2 for maximum

power

50 Ohm Transmission Line Length D

for maximum power

Physical Location for C2 for maximum

TOI

C5, C6 0.1 µµµµF 0603 Capacitor

C7, C8 0.01 µµµµF 0603 Capacitor

C9, C10 1000 pF 0603 Capacitor

R1 50 Ohms 0805 1/8 Watt Resistor

R2 11 Ohms 3 Ohms 5.1 Ohms 0805 1/8 Watt Resistor

Q1 -- TriQuint TGF2960-SD Packaged FET

(PCB) -- 28 mil thick GETEK

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.

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19

Recommended Assembly Diagram

2.6 mm Ø CLEARANCE HOLE

TGF2960-SD

FOR 2-56 SOCKET HEAD CAP SCREW (2/)

4.6 mm Ø SOLDERMASK

KEEPOUT FOR 2-56 LOCKWASHER (4/)

1 2 3

7.6 X 7.6 mm COPPER AREA (3/)

ARRAY OF VIAS (1/)

SOT-89 PACKAGE OUTLINE

Assembly Notes

1/ The lowest possible thermal and electrical resistance for Pin 2 is critical for optimal performance. The array
of vias under Pin 2 should be as small and as dense as the PC board fabrication permits. 0.30 mm diameter
vias on 0.60 mm center to center spacing is recommended.

2/ Mounting screws in the vicinity of the package improve heat transfer to the chassis or to a heat spreader
located on the backside of the PC board. Shown are clearance holes and solder mask keepout zone for a 2­56 socket head cap screw. Use of a split lockwasher and proper torque on the screw will prevent
compression damage to the PC board.

3/ Use of 1 oz copper (min) in the PC board construction is recommended.

4/ For lowest thermal resistance, solder mask must be removed where the copper traces on the PC board
contact the heat spreader. In this example, this would be a) front and backsides of the PC board around the
2-56 screw and b) front of the PC board around package pin 2.

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.

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July 2010 © Rev A

20

TGF2960-SD

Ordering Information

Activation Time and

60 – 120 sec @ 140 – 160

°C60 – 180 sec @ 150 – 20 0

°

C

Recommended Surface Mount Package Assembly

Proper ESD precautions must be followed while handling packages.

Clean the board with acetone. Rinse with alcohol. Allow the circuit to fully dry.

TriQuint recommends using a conductive solder paste for attachment. Follow solder paste and reflow oven
vendors’ recommendations when developing a solder reflow profile. Typical solder reflow profiles are listed
in the table below.

Hand soldering is not recommended. Solder paste can be applied using a stencil printer or dot placement.
The volume of solder paste depends on PCB and component layout and should be well controlled to
ensure consistent mechanical and electrical performance.

Clean the assembly with alcohol.

Typical Solder Reflow Profiles

Reflow Profile SnPb Pb Free

Ramp-up R ate

Temperature

Time above Melting Po int 60 – 150 sec 60 – 150 sec

Max Peak Temperature

Time w ithin 5 °C of Peak

Temperature

Ramp-do wn Rate

3 °C/sec 3 °C/sec

240 °C 260 °C

10 – 20 sec 10 – 20 sec

4 – 6 °C/sec 4 – 6 °C/sec

Part Package Style

TGF2960-SD, TAPE AND REEL SOT-89, TAPE AND REEL

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21

July 2010 © Rev A