Datasheet tgf2023-10 Datasheet

TGF2023-10

50 Watt Discrete Power GaN on SiC HEMT

Key Features

• Frequency Range: DC - 18 GHz

• 46.7 dBm Nominal Psat at 3 GHz

• 55% Maximum PAE

• 17.5 dB Nominal Power Gain

• Bias: Vd = 28 - 32 V, Idq = 1 A, Vg = -3.6 V Typical

• Technology: 0.25 um Power GaN on SiC

• Chip Dimensions: 0.82 x 2.48 x 0.10 mm

Primary Applications

• Defense & Aerospace

• Broadband Wireless

Bias conditions: Vd = 28 V, Idq = 1 A, Vg = -3.6 V Typical

TriQuint Semiconductor: www. triquint.com [phone] Fax [phone] [email protected]

Product Description

The TriQuint TGF2023-10 is a discrete 10 mm
GaN on SiC HEMT which operates from DC-18
GHz. The TGF2023-10 is designed using

TriQuint’s proven 0.25um GaN production process.
This process features advanced field plate
techniques to optimize microwave power and

efficiency at high drain bias operating conditions.

The TGF2023-10 typically provides 46.7 dBm of
saturated output power with power gain of 17.8 dB
at 3 GHz. The maximum power added efficiency
is 55% which makes the TGF2023-10 appropriate
for high efficiency applications.

Lead-free and RoHS compliant

.

Apr 2011 © Rev D

Datasheet subject to change without notice.

1

Table I

TGF2023-10

Absolute Maximum Ratings 1

/

Symbol Parameter V alue Notes

Vd Drain Voltage 40 V 2/

Vg Gate Voltage Range -50 to 0 V

Vdg Drain-Gate Voltage 80 V

Id Drain Current 10 A 2/

Ig Gate Current 56 mA

Pin Input Continuous Wave Power 40 dBm 2/

Tch Channel Temperature 200 °C

/ These ratings represent the maximum operable values for this device. Stresses beyond those listed

1

under “Absolute Maximum Ratings” may cause permanent damage to the device and / or affect
device lifetime. These are stress ratings only, and functional operation of the device at these
conditions is not implied.

/ Combinations of supply voltage, supply current, input power, and output power shall not exceed the

2

maximum power dissipation listed in Table IV.

Table II

Recommended Operating Conditions

Symbol Parameter V alue

Vd Drain Voltage 28 - 32 V

Idq Drain Current 1 A

Id_Drive Drain Current under RF Drive 3 A

Vg Gate Voltage -3.6 V

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Apr 2011 © Rev D

2

Table III

TGF2023-10

RF Characterization Table 1

/

Bias: Vd = 28 V, Idq = 1000 mA, Vg = -3.6V Typical

SYMBOL PARAMETER 3 GHz 6 GHz 10 GHz 14 GHz UNITS

Power Tuned:

Psat Saturated Output

Power

PAE Power Added

Efficiency

Gain Power Gain 17.5 11.5 8.9 5.6 dB

Efficiency Tuned:

Psat Saturated Output

Power

PAE Power Added

Efficiency

Gain Power Gain 16.8 12.1 9.2 5.5 dB

46.7 46.0 45.8 44.3 dBm

55 53 47 38 %

45.4 44.3 45.5 44.3 dBm

60 60 49 39 %

SYMBOL PARAMETER 3 GHz 6 GHz 10 GHz 14 GHz UNITS

Power Tuned:

/ Parallel Resistance 79.3 81.9 61.5 49.9 Ω·mm

Rp 2

Cp 2

/ Parallel Capacitance 0.524 0.348 0.426 0.432 pF/mm

Efficiency Tuned:

Rp 2

/ Parallel Resistance 153 171 72.1 53.1 Ω·mm

/ Parallel Capacitance 0.426 0.372 0.414 0.472 pF/mm

Cp 2

1/ Values in this table are engineering estimates scaled from measurements on the 1.25 mm

GaN/SiC unit cell (see TGF2023-01 datasheet)

2

/ Large signal equivalent output network (normalized) (see figure, pg 7)

TriQuint Semiconductor: www. triquint.com [phone] Fax [phone] [email protected]

Apr 2011 © Rev D

3

Table IV

TGF2023-10

Power Dissipation and Thermal Properties 1

Parameter Test Conditions V alue Notes

Maximum Power Dissipation Tbaseplate = 70 ºC Pd = 64 W

Tchannel = 200 ºC

Tm = 1.5E+6 Hrs

Thermal Resistance, θjc Vd = 28 V

Id = 1 A
Pd = 28 W
Tbaseplate = 70 ºC

Thermal Resistance, θjc

Under RF Drive

Mounting Temperature 30 Seconds 320 ºC

Storage Temperature -65 to 150 ºC

Vd = 28 V
Id = 2.98 A
Pout = 46.7 dBm
Pd = 37.6 W
Tbaseplate = 70 ºC

θjc = 2.0 (ºC/W)

Tchannel = 126 ºC

Tm = 6.4E+8 Hrs

θjc = 2.0 (ºC/W)

Tchannel = 145 ºC

Tm = 1.1E+8 Hrs

/

2/

1

/ Assumes eutectic attach using 1mil thick 80/20 AuSn mounted to a 10mil CuMo Carrier Plate

2

/ Channel operating temperature will directly affect the device median lifetime. For maximum life, it is

recommended that channel temperatures be maintained at the lowest possible levels.

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Apr 2011 © Rev D

4

TGF2023-10

Median Lifetime vs Channel Temperature

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Apr 2011 © Rev D

5

Gate

Linear Model for 1.25 mm Unit GaN Cell (UGC)

Rdg

Lg Rg Cdg Rd Ld

Drain

Cgs

Rgs

+

v

i

-

R

i

gm v

Ls

Rs

Rds Cds

i

TGF2023-10

Source

MODEL

PARAMETER

Rg

Rs

Rd

gm

Cgs

Ri

Cds

Rds

Cgd

Tau

Vd=28V

Idq=125mA

0.78

0.13

1.28

0.270

1.79

0.26

0.308

123.6

0.064

2.78

Unit GaN cell (UGC)

Reference Plane

UNITS

Ω

Ω

Ω

S

pF

Ω

pF

Ω

pF

pS

Ls

Lg

Ld

Rgs

Rgd

TriQuint Semiconductor: www. triquint.com [phone] Fax [phone] [email protected]

0.0058

-0.013

0.018

8900

1730000

Apr 2011 © Rev D

nH

nH

nH

Ω

Ω

6

TGF2023-10

Complete 10mm GaN HEMT Linear Model

Includes 8 UGC, 9 vias, and 16 bonding pads

Gate Pads

1

3

5

7

9

11

13

15

.s16p file

Drain Pads

2

Γ_load

4

6

8

10

12

14

16

Rp, Cp

TriQuint Semiconductor: www. triquint.com [phone] Fax [phone] [email protected]

Apr 2011 © Rev D

7

Mechanical Drawing

TGF2023-10

Units: millimeters

Thickness: 0.100

Die x,y size tolerance: +/- 0.050

Chip edge to bond pad dimensions are shown to center of pad

Ground is backside of die

Bond Pad #1 - 8 Vg 0.154 x 0.115

Bond Pad #9 Vd 0.154 x 2.050

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.

TriQuint Semiconductor: www. triquint.com [phone] Fax [phone] [email protected]

Apr 2011 © Rev D

8

TGF2023-10

Assembly Notes

Component placement and adhesive attachment assembly notes:

• Vacuum pencils and/or vacuum collets are the preferred method of pick up.

• Air bridges must be avoided during placement.

• The force impact is critical during auto placement.

• Organic attachment (i.e. epoxy) can be used in low-power applications.

• Curing should be done in a convection oven; proper exhaust is a safety concern.

Reflow process assembly notes:

• Use AuSn (80/20) solder and limit exposure to temperatures above 300°C to 3-4 minutes, maximum.

• An alloy station or conveyor furnace with reducing atmosphere should be used.

• Do not use any kind of flux.

• Coefficient of thermal expansion matching is critical for long-term reliability.

• Devices must be stored in a dry nitrogen atmosphere.

Interconnect process assembly notes:

• Ball bonding is the preferred interconnect technique, except where noted on the assembly diagram.

• Force, time, and ultrasonics are critical bonding parameters.

• Aluminum wire should not be used.

• Devices with small pad sizes should be bonded with 0.0007-inch wire.

Ordering Information

Part ECCN Package Style

TGF2023-10 3A001.b.3.b GaN on SiC Die

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.

TriQuint Semiconductor: www. triquint.com [phone] Fax [phone] [email protected]

Apr 2011 © Rev D

9